Cache DRAM, 4MX1, 30ns, MOS, PDSO28
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Ramtron International Corporation (Cypress Semiconductor Corporation) |
| 包装说明 | SOJ, SOJ28,.34 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 访问模式 | FAST EDO/STATIC COLUMN |
| 最长访问时间 | 30 ns |
| 其他特性 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 8K X 1 SRAM |
| I/O 类型 | SEPARATE |
| JESD-30 代码 | R-PDSO-J28 |
| JESD-609代码 | e0 |
| 内存密度 | 4194304 bit |
| 内存集成电路类型 | CACHE DRAM |
| 内存宽度 | 1 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 28 |
| 字数 | 4194304 words |
| 字数代码 | 4000000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 4MX1 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | SOJ |
| 封装等效代码 | SOJ28,.34 |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | 3.3 V |
| 认证状态 | Not Qualified |
| 刷新周期 | 1024 |
| 自我刷新 | NO |
| 最大待机电流 | 0.001 A |
| 最大压摆率 | 0.225 mA |
| 最大供电电压 (Vsup) | 3.6 V |
| 最小供电电压 (Vsup) | 3 V |
| 标称供电电压 (Vsup) | 3.3 V |
| 表面贴装 | YES |
| 技术 | MOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | J BEND |
| 端子节距 | 1.27 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| DM2240J3-12 | DM2240J3-12I | DM2240T3-15I | DM2240J2-15 | DM2240J2-15I | DM2240T2-15I | DM2240J2-12 | DM2240J2-12I | DM2240T2-12L | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | Cache DRAM, 4MX1, 30ns, MOS, PDSO28 | Cache DRAM, 4MX1, 30ns, MOS, PDSO28 | Cache DRAM, 4MX1, 35ns, MOS, PDSO44 | Cache DRAM, 4MX1, 35ns, MOS, PDSO28 | Cache DRAM, 4MX1, 35ns, MOS, PDSO28 | Cache DRAM, 4MX1, 35ns, MOS, PDSO44 | Cache DRAM, 4MX1, 30ns, MOS, PDSO28 | Cache DRAM, 4MX1, 30ns, MOS, PDSO28 | Cache DRAM, 4MX1, 30ns, MOS, PDSO44 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | Ramtron International Corporation (Cypress Semiconductor Corporation) | Ramtron International Corporation (Cypress Semiconductor Corporation) | Ramtron International Corporation (Cypress Semiconductor Corporation) | Ramtron International Corporation (Cypress Semiconductor Corporation) | Ramtron International Corporation (Cypress Semiconductor Corporation) | Ramtron International Corporation (Cypress Semiconductor Corporation) | Ramtron International Corporation (Cypress Semiconductor Corporation) | Ramtron International Corporation (Cypress Semiconductor Corporation) | Ramtron International Corporation (Cypress Semiconductor Corporation) |
| 包装说明 | SOJ, SOJ28,.34 | SOJ, SOJ28,.34 | TSOP, TSOP44,.36,32 | SOJ, SOJ28,.34 | SOJ, SOJ28,.34 | TSOP, TSOP44,.36,32 | SOJ, SOJ28,.34 | SOJ, SOJ28,.34 | TSOP, TSOP44,.36,32 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknow |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 访问模式 | FAST EDO/STATIC COLUMN | FAST EDO/STATIC COLUMN | FAST EDO/STATIC COLUMN | FAST EDO/STATIC COLUMN | FAST EDO/STATIC COLUMN | FAST EDO/STATIC COLUMN | FAST EDO/STATIC COLUMN | FAST EDO/STATIC COLUMN | FAST EDO/STATIC COLUMN |
| 最长访问时间 | 30 ns | 30 ns | 35 ns | 35 ns | 35 ns | 35 ns | 30 ns | 30 ns | 30 ns |
| 其他特性 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 8K X 1 SRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 8K X 1 SRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 8K X 1 SRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 8K X 1 SRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 8K X 1 SRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 8K X 1 SRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 8K X 1 SRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 8K X 1 SRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 8K X 1 SRAM |
| I/O 类型 | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE |
| JESD-30 代码 | R-PDSO-J28 | R-PDSO-J28 | R-PDSO-G44 | R-PDSO-J28 | R-PDSO-J28 | R-PDSO-G44 | R-PDSO-J28 | R-PDSO-J28 | R-PDSO-G44 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bi |
| 内存集成电路类型 | CACHE DRAM | CACHE DRAM | CACHE DRAM | CACHE DRAM | CACHE DRAM | CACHE DRAM | CACHE DRAM | CACHE DRAM | CACHE DRAM |
| 内存宽度 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 28 | 28 | 44 | 28 | 28 | 44 | 28 | 28 | 44 |
| 字数 | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words |
| 字数代码 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 85 °C | 85 °C | 70 °C | 85 °C | 85 °C | 70 °C | 85 °C | 70 °C |
| 最低工作温度 | - | -40 °C | -40 °C | - | -40 °C | -40 °C | - | -40 °C | - |
| 组织 | 4MX1 | 4MX1 | 4MX1 | 4MX1 | 4MX1 | 4MX1 | 4MX1 | 4MX1 | 4MX1 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | SOJ | SOJ | TSOP | SOJ | SOJ | TSOP | SOJ | SOJ | TSOP |
| 封装等效代码 | SOJ28,.34 | SOJ28,.34 | TSOP44,.36,32 | SOJ28,.34 | SOJ28,.34 | TSOP44,.36,32 | SOJ28,.34 | SOJ28,.34 | TSOP44,.36,32 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 电源 | 3.3 V | 3.3 V | 3.3 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 1024 | 1024 | 1024 | 1024 | 1024 | 1024 | 1024 | 1024 | 1024 |
| 自我刷新 | NO | NO | NO | NO | NO | NO | NO | NO | YES |
| 最大待机电流 | 0.001 A | 0.001 A | 0.001 A | 0.001 A | 0.001 A | 0.001 A | 0.001 A | 0.001 A | 0.001 A |
| 最大压摆率 | 0.225 mA | 0.225 mA | 0.18 mA | 0.18 mA | 0.18 mA | 0.18 mA | 0.225 mA | 0.225 mA | 0.225 mA |
| 最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 5.25 V | 5.25 V | 5.25 V | 5.25 V | 5.25 V | 5.25 V |
| 最小供电电压 (Vsup) | 3 V | 3 V | 3 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V |
| 标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES | YES |
| 技术 | MOS | MOS | MOS | MOS | MOS | MOS | MOS | MOS | MOS |
| 温度等级 | COMMERCIAL | INDUSTRIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | J BEND | J BEND | GULL WING | J BEND | J BEND | GULL WING | J BEND | J BEND | GULL WING |
| 端子节距 | 1.27 mm | 1.27 mm | 0.8 mm | 1.27 mm | 1.27 mm | 0.8 mm | 1.27 mm | 1.27 mm | 0.8 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
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