电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

79LV2040RPFH-20

产品描述EEPROM, 512KX40, 200ns, Parallel, CMOS, PDFP100, FP-100
产品类别存储    存储   
文件大小542KB,共17页
制造商Maxwell_Technologies_Inc.
下载文档 详细参数 选型对比 全文预览

79LV2040RPFH-20概述

EEPROM, 512KX40, 200ns, Parallel, CMOS, PDFP100, FP-100

79LV2040RPFH-20规格参数

参数名称属性值
零件包装代码DFP
包装说明DFP, FL100,.9,25
针数100
Reach Compliance Codecompliant
ECCN代码3A001.A.2.C
最长访问时间200 ns
命令用户界面NO
数据轮询YES
JESD-30 代码R-PDFP-F100
长度34.6964 mm
内存密度20971520 bit
内存集成电路类型EEPROM
内存宽度40
功能数量1
端子数量100
字数524288 words
字数代码512000
工作模式ASYNCHRONOUS
最高工作温度125 °C
最低工作温度-55 °C
组织512KX40
封装主体材料PLASTIC/EPOXY
封装代码DFP
封装等效代码FL100,.9,25
封装形状RECTANGULAR
封装形式FLATPACK
页面大小128 words
并行/串行PARALLEL
电源3.3 V
编程电压3 V
认证状态Not Qualified
就绪/忙碌YES
座面最大高度12.7 mm
最大待机电流0.021 A
最大压摆率0.075 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级MILITARY
端子形式FLAT
端子节距0.635 mm
端子位置DUAL
切换位NO
总剂量100k Rad(Si) V
宽度22.7838 mm
最长写入周期时间 (tWC)15 ms
写保护HARDWARE/SOFTWARE
Base Number Matches1

文档预览

下载PDF文档
20 Megabit (512K x 40-Bit) Low
Low Voltage EEPROM MCM
79LV2040
Logic Diagram
Memory
F
EATURES
:
512k x 40-bit EEPROM MCM
R
AD
-P
AK
® radiation-hardened against natural
space radiation
Total dose hardness:
- >100 krad (Si)
- Dependent upon orbit
• Excellent Single event effects
- SEL
TH
> 84 MeV/mg/cm
2
- SEU ~ 26 MeV/mg/cm
2
read mode
- SEU Staurated Cross Section ~ 2X10
-12
cm2Bit (Read
Mode)
- SEU = 11 MeV/mg/cm
2
write mode
- SEU Staurated Cross Section ~ 6X10
-9
cm2/Bit (Write
Mode)
• High endurance
- 10,000 cycles (Page Programming Mode)
- 10 year data retention
• Page Write Mode: 128 Dword Page
• High Speed:
- 200 and 250 ns maximum access times
• Automatic programming
- 15 ms automatic Page/Dword write
• Low power dissipation
- 100 mW/MHz active current
- 1.5 mW standby current
D
ESCRIPTION
:
Maxwell Technologies’ 79LV2040 multi-chip module (MCM)
memory features a greater than 100 krad (Si) total dose toler-
ance, dependent upon orbit. Using Maxwell Technologies’ pat-
ented radiation-hardened R
AD
-P
AK
® MCM packaging
technology, the 79LV2040 is the first radiation-hardened 20
megabit MCM EEPROM for space application. The 79LV2040
uses twenty 1 Megabit high speed CMOS EEPROM die to
yield a 20 megabit product. The 79LV2040 is capable of in-
system electrical byte and page programmability. It has a 128
x 40 page programming function to make the erase and write
operations faster. It also features Data Polling and a Ready/
Busy signal to indicate the completion of erase and program-
ming operations. In the 79LV2040, hardware data protection is
provided with the RES pin, in addition to noise protection on
the WE signal and write inhibit on power on and off. Software
data protection is implemented using the JEDEC optional
standard algorithm.
Maxwell Technologies' patented R
AD
-P
AK
® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, R
AD
-P
AK
provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Maxwell Technologies self-defined Class
K
11.15.2010 Rev 2
All data sheets are subject to change without notice
1
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
©2010 Maxwell Technologies
All rights reserved.

79LV2040RPFH-20相似产品对比

79LV2040RPFH-20 79LV2040RPFI-20 79LV2040RPFH-25 79LV2040RPFK-20 79LV2040RPFI-25 79LV2040RPFK-25
描述 EEPROM, 512KX40, 200ns, Parallel, CMOS, PDFP100, FP-100 EEPROM, 512KX40, 200ns, Parallel, CMOS, PDFP100, FP-100 EEPROM, 512KX40, 250ns, Parallel, CMOS, PDFP100, FP-100 EEPROM, 512KX40, 200ns, Parallel, CMOS, PDFP100, FP-100 EEPROM, 512KX40, 250ns, Parallel, CMOS, PDFP100, FP-100 EEPROM, 512KX40, 250ns, Parallel, CMOS, PDFP100, FP-100
零件包装代码 DFP DFP DFP DFP DFP DFP
包装说明 DFP, FL100,.9,25 DFP, FL100,.9,25 DFP, FL100,.9,25 DFP, FL100,.9,25 DFP, FL100,.9,25 DFP, FL100,.9,25
针数 100 100 100 100 100 100
Reach Compliance Code compliant compliant compliant compliant compliant compliant
ECCN代码 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C
最长访问时间 200 ns 200 ns 250 ns 200 ns 250 ns 250 ns
命令用户界面 NO NO NO NO NO NO
数据轮询 YES YES YES YES YES YES
JESD-30 代码 R-PDFP-F100 R-PDFP-F100 R-PDFP-F100 R-PDFP-F100 R-PDFP-F100 R-PDFP-F100
长度 34.6964 mm 34.6964 mm 34.6964 mm 34.6964 mm 34.6964 mm 34.6964 mm
内存密度 20971520 bit 20971520 bit 20971520 bit 20971520 bit 20971520 bit 20971520 bit
内存集成电路类型 EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM
内存宽度 40 40 40 40 40 40
功能数量 1 1 1 1 1 1
端子数量 100 100 100 100 100 100
字数 524288 words 524288 words 524288 words 524288 words 524288 words 524288 words
字数代码 512000 512000 512000 512000 512000 512000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
组织 512KX40 512KX40 512KX40 512KX40 512KX40 512KX40
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 DFP DFP DFP DFP DFP DFP
封装等效代码 FL100,.9,25 FL100,.9,25 FL100,.9,25 FL100,.9,25 FL100,.9,25 FL100,.9,25
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLATPACK FLATPACK FLATPACK FLATPACK FLATPACK FLATPACK
页面大小 128 words 128 words 128 words 128 words 128 words 128 words
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
电源 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
编程电压 3 V 3 V 3 V 3 V 3 V 3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
就绪/忙碌 YES YES YES YES YES YES
座面最大高度 12.7 mm 12.7 mm 12.7 mm 12.7 mm 12.7 mm 12.7 mm
最大待机电流 0.021 A 0.021 A 0.021 A 0.021 A 0.021 A 0.021 A
最大压摆率 0.075 mA 0.075 mA 0.075 mA 0.075 mA 0.075 mA 0.075 mA
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY
端子形式 FLAT FLAT FLAT FLAT FLAT FLAT
端子节距 0.635 mm 0.635 mm 0.635 mm 0.635 mm 0.635 mm 0.635 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL
切换位 NO NO NO NO NO NO
总剂量 100k Rad(Si) V 100k Rad(Si) V 100k Rad(Si) V 100k Rad(Si) V 100k Rad(Si) V 100k Rad(Si) V
宽度 22.7838 mm 22.7838 mm 22.7838 mm 22.7838 mm 22.7838 mm 22.7838 mm
最长写入周期时间 (tWC) 15 ms 15 ms 15 ms 15 ms 15 ms 15 ms
写保护 HARDWARE/SOFTWARE HARDWARE/SOFTWARE HARDWARE/SOFTWARE HARDWARE/SOFTWARE HARDWARE/SOFTWARE HARDWARE/SOFTWARE
Base Number Matches 1 1 1 1 1 1

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 329  1068  2489  1259  1338  25  55  45  19  23 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved