EEPROM, 512KX40, 200ns, Parallel, CMOS, PDFP100, FP-100
| 参数名称 | 属性值 |
| 零件包装代码 | DFP |
| 包装说明 | DFP, FL100,.9,25 |
| 针数 | 100 |
| Reach Compliance Code | compliant |
| ECCN代码 | 3A001.A.2.C |
| 最长访问时间 | 200 ns |
| 命令用户界面 | NO |
| 数据轮询 | YES |
| JESD-30 代码 | R-PDFP-F100 |
| 长度 | 34.6964 mm |
| 内存密度 | 20971520 bit |
| 内存集成电路类型 | EEPROM |
| 内存宽度 | 40 |
| 功能数量 | 1 |
| 端子数量 | 100 |
| 字数 | 524288 words |
| 字数代码 | 512000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 512KX40 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | DFP |
| 封装等效代码 | FL100,.9,25 |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLATPACK |
| 页面大小 | 128 words |
| 并行/串行 | PARALLEL |
| 电源 | 3.3 V |
| 编程电压 | 3 V |
| 认证状态 | Not Qualified |
| 就绪/忙碌 | YES |
| 座面最大高度 | 12.7 mm |
| 最大待机电流 | 0.021 A |
| 最大压摆率 | 0.075 mA |
| 最大供电电压 (Vsup) | 3.6 V |
| 最小供电电压 (Vsup) | 3 V |
| 标称供电电压 (Vsup) | 3.3 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子形式 | FLAT |
| 端子节距 | 0.635 mm |
| 端子位置 | DUAL |
| 切换位 | NO |
| 总剂量 | 100k Rad(Si) V |
| 宽度 | 22.7838 mm |
| 最长写入周期时间 (tWC) | 15 ms |
| 写保护 | HARDWARE/SOFTWARE |
| Base Number Matches | 1 |

| 79LV2040RPFH-20 | 79LV2040RPFI-20 | 79LV2040RPFH-25 | 79LV2040RPFK-20 | 79LV2040RPFI-25 | 79LV2040RPFK-25 | |
|---|---|---|---|---|---|---|
| 描述 | EEPROM, 512KX40, 200ns, Parallel, CMOS, PDFP100, FP-100 | EEPROM, 512KX40, 200ns, Parallel, CMOS, PDFP100, FP-100 | EEPROM, 512KX40, 250ns, Parallel, CMOS, PDFP100, FP-100 | EEPROM, 512KX40, 200ns, Parallel, CMOS, PDFP100, FP-100 | EEPROM, 512KX40, 250ns, Parallel, CMOS, PDFP100, FP-100 | EEPROM, 512KX40, 250ns, Parallel, CMOS, PDFP100, FP-100 |
| 零件包装代码 | DFP | DFP | DFP | DFP | DFP | DFP |
| 包装说明 | DFP, FL100,.9,25 | DFP, FL100,.9,25 | DFP, FL100,.9,25 | DFP, FL100,.9,25 | DFP, FL100,.9,25 | DFP, FL100,.9,25 |
| 针数 | 100 | 100 | 100 | 100 | 100 | 100 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant |
| ECCN代码 | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C |
| 最长访问时间 | 200 ns | 200 ns | 250 ns | 200 ns | 250 ns | 250 ns |
| 命令用户界面 | NO | NO | NO | NO | NO | NO |
| 数据轮询 | YES | YES | YES | YES | YES | YES |
| JESD-30 代码 | R-PDFP-F100 | R-PDFP-F100 | R-PDFP-F100 | R-PDFP-F100 | R-PDFP-F100 | R-PDFP-F100 |
| 长度 | 34.6964 mm | 34.6964 mm | 34.6964 mm | 34.6964 mm | 34.6964 mm | 34.6964 mm |
| 内存密度 | 20971520 bit | 20971520 bit | 20971520 bit | 20971520 bit | 20971520 bit | 20971520 bit |
| 内存集成电路类型 | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM |
| 内存宽度 | 40 | 40 | 40 | 40 | 40 | 40 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 100 | 100 | 100 | 100 | 100 | 100 |
| 字数 | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words |
| 字数代码 | 512000 | 512000 | 512000 | 512000 | 512000 | 512000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 组织 | 512KX40 | 512KX40 | 512KX40 | 512KX40 | 512KX40 | 512KX40 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | DFP | DFP | DFP | DFP | DFP | DFP |
| 封装等效代码 | FL100,.9,25 | FL100,.9,25 | FL100,.9,25 | FL100,.9,25 | FL100,.9,25 | FL100,.9,25 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLATPACK | FLATPACK | FLATPACK | FLATPACK | FLATPACK | FLATPACK |
| 页面大小 | 128 words | 128 words | 128 words | 128 words | 128 words | 128 words |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 电源 | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 编程电压 | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 就绪/忙碌 | YES | YES | YES | YES | YES | YES |
| 座面最大高度 | 12.7 mm | 12.7 mm | 12.7 mm | 12.7 mm | 12.7 mm | 12.7 mm |
| 最大待机电流 | 0.021 A | 0.021 A | 0.021 A | 0.021 A | 0.021 A | 0.021 A |
| 最大压摆率 | 0.075 mA | 0.075 mA | 0.075 mA | 0.075 mA | 0.075 mA | 0.075 mA |
| 最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| 最小供电电压 (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
| 标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子形式 | FLAT | FLAT | FLAT | FLAT | FLAT | FLAT |
| 端子节距 | 0.635 mm | 0.635 mm | 0.635 mm | 0.635 mm | 0.635 mm | 0.635 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 切换位 | NO | NO | NO | NO | NO | NO |
| 总剂量 | 100k Rad(Si) V | 100k Rad(Si) V | 100k Rad(Si) V | 100k Rad(Si) V | 100k Rad(Si) V | 100k Rad(Si) V |
| 宽度 | 22.7838 mm | 22.7838 mm | 22.7838 mm | 22.7838 mm | 22.7838 mm | 22.7838 mm |
| 最长写入周期时间 (tWC) | 15 ms | 15 ms | 15 ms | 15 ms | 15 ms | 15 ms |
| 写保护 | HARDWARE/SOFTWARE | HARDWARE/SOFTWARE | HARDWARE/SOFTWARE | HARDWARE/SOFTWARE | HARDWARE/SOFTWARE | HARDWARE/SOFTWARE |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |
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