Power Field-Effect Transistor, 4A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| Reach Compliance Code | unknown |
| 外壳连接 | ISOLATED |
| 配置 | SINGLE |
| 最小漏源击穿电压 | 1000 V |
| 最大漏极电流 (Abs) (ID) | 4 A |
| 最大漏极电流 (ID) | 4 A |
| 最大漏源导通电阻 | 2 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-218 |
| JESD-30 代码 | R-PSFM-T3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 功耗环境最大值 | 70 W |
| 最大功率耗散 (Abs) | 70 W |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| MTG4N100E | MTW36N10E | MTW4N80E | MTW15N25E | MTG7N60E | |
|---|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 4A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | 36A, 100V, 0.058ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | 4A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | 15A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Power Field-Effect Transistor, 7A I(D), 600V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| 外壳连接 | ISOLATED | DRAIN | DRAIN | DRAIN | ISOLATED |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小漏源击穿电压 | 1000 V | 100 V | 800 V | 250 V | 600 V |
| 最大漏极电流 (ID) | 4 A | 36 A | 4 A | 15 A | 7 A |
| 最大漏源导通电阻 | 2 Ω | 0.058 Ω | 3 Ω | 0.28 Ω | 0.5 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-218 | TO-247 | TO-247 | TO-247 | TO-218 |
| JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 功耗环境最大值 | 70 W | 150 W | 150 W | 150 W | 70 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO | NO |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | - |
| 最大漏极电流 (Abs) (ID) | 4 A | 36 A | 4 A | 15 A | - |
| JESD-609代码 | e0 | e0 | e0 | e0 | - |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - |
| 最大功率耗散 (Abs) | 70 W | 150 W | 150 W | 150 W | - |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - |
| Base Number Matches | 1 | - | 1 | 1 | - |
| 包装说明 | - | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
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