Multiplexer, ACT Series, 1-Func, 8 Line Input, 1 Line Output, Complementary Output, CMOS, CDFP16, BOTTOM BRAZED, CERAMIC, DFP-16
参数名称 | 属性值 |
包装说明 | DFP, FL16,.3 |
Reach Compliance Code | unknown |
ECCN代码 | 3A001.A.1.A |
系列 | ACT |
JESD-30 代码 | R-XDFP-F16 |
JESD-609代码 | e4 |
负载电容(CL) | 50 pF |
逻辑集成电路类型 | MULTIPLEXER |
最大I(ol) | 0.008 A |
功能数量 | 1 |
输入次数 | 8 |
输出次数 | 1 |
端子数量 | 16 |
最高工作温度 | 125 °C |
最低工作温度 | -55 °C |
输出极性 | COMPLEMENTARY |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
封装代码 | DFP |
封装等效代码 | FL16,.3 |
封装形状 | RECTANGULAR |
封装形式 | FLATPACK |
电源 | 5 V |
Prop。Delay @ Nom-Sup | 25 ns |
传播延迟(tpd) | 25 ns |
认证状态 | Qualified |
筛选级别 | 38535Q/M;38534H;883B |
座面最大高度 | 2.921 mm |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 4.5 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | MILITARY |
端子面层 | GOLD |
端子形式 | FLAT |
端子节距 | 1.27 mm |
端子位置 | DUAL |
总剂量 | 1M Rad(Si) V |
宽度 | 6.731 mm |
Base Number Matches | 1 |
5962H9654901QXC | 5962H9654901VEC | 5962H9654901QEC | 5962H9654901QEA | 5962H9654901QXA | 5962H9654901VEA | 5962H9654901VXA | 5962H9654901VXC | |
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描述 | Multiplexer, ACT Series, 1-Func, 8 Line Input, 1 Line Output, Complementary Output, CMOS, CDFP16, BOTTOM BRAZED, CERAMIC, DFP-16 | Multiplexer, ACT Series, 1-Func, 8 Line Input, 1 Line Output, Complementary Output, CMOS, CDIP16, SIDE BRAZED, CERAMIC, DIP-16 | Multiplexer, ACT Series, 1-Func, 8 Line Input, 1 Line Output, Complementary Output, CMOS, CDIP16, SIDE BRAZED, CERAMIC, DIP-16 | Multiplexer, ACT Series, 1-Func, 8 Line Input, 1 Line Output, Complementary Output, CMOS, CDIP16, SIDE BRAZED, CERAMIC, DIP-16 | Multiplexer, ACT Series, 1-Func, 8 Line Input, 1 Line Output, Complementary Output, CMOS, CDFP16, BOTTOM BRAZED, CERAMIC, DFP-16 | Multiplexer, ACT Series, 1-Func, 8 Line Input, 1 Line Output, Complementary Output, CMOS, CDIP16, SIDE BRAZED, CERAMIC, DIP-16 | Multiplexer, ACT Series, 1-Func, 8 Line Input, 1 Line Output, Complementary Output, CMOS, CDFP16, BOTTOM BRAZED, CERAMIC, DFP-16 | Multiplexer, ACT Series, 1-Func, 8 Line Input, 1 Line Output, Complementary Output, CMOS, CDFP16, BOTTOM BRAZED, CERAMIC, DFP-16 |
包装说明 | DFP, FL16,.3 | DIP, DIP16,.3 | DIP, DIP16,.3 | DIP, DIP16,.3 | DFP, FL16,.3 | DIP, DIP16,.3 | DFP, FL16,.3 | DFP, FL16,.3 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | 3A001.A.1.A | 3A001.A.1.A | 3A001.A.1.A | 3A001.A.1.A | 3A001.A.1.A | 3A001.A.1.A | 3A001.A.1.A | 3A001.A.1.A |
系列 | ACT | ACT | ACT | ACT | ACT | ACT | ACT | ACT |
JESD-30 代码 | R-XDFP-F16 | R-XDIP-T16 | R-XDIP-T16 | R-XDIP-T16 | R-XDFP-F16 | R-XDIP-T16 | R-XDFP-F16 | R-XDFP-F16 |
JESD-609代码 | e4 | e4 | e4 | e0 | e0 | e0 | e0 | e4 |
负载电容(CL) | 50 pF | 50 pF | 50 pF | 50 pF | 50 pF | 50 pF | 50 pF | 50 pF |
逻辑集成电路类型 | MULTIPLEXER | MULTIPLEXER | MULTIPLEXER | MULTIPLEXER | MULTIPLEXER | MULTIPLEXER | MULTIPLEXER | MULTIPLEXER |
最大I(ol) | 0.008 A | 0.008 A | 0.008 A | 0.008 A | 0.008 A | 0.008 A | 0.008 A | 0.008 A |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
输入次数 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
输出次数 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 16 | 16 | 16 | 16 | 16 | 16 | 16 | 16 |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
输出极性 | COMPLEMENTARY | COMPLEMENTARY | COMPLEMENTARY | COMPLEMENTARY | COMPLEMENTARY | COMPLEMENTARY | COMPLEMENTARY | COMPLEMENTARY |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
封装代码 | DFP | DIP | DIP | DIP | DFP | DIP | DFP | DFP |
封装等效代码 | FL16,.3 | DIP16,.3 | DIP16,.3 | DIP16,.3 | FL16,.3 | DIP16,.3 | FL16,.3 | FL16,.3 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLATPACK | IN-LINE | IN-LINE | IN-LINE | FLATPACK | IN-LINE | FLATPACK | FLATPACK |
电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
Prop。Delay @ Nom-Sup | 25 ns | 25 ns | 25 ns | 25 ns | 25 ns | 25 ns | 25 ns | 25 ns |
传播延迟(tpd) | 25 ns | 25 ns | 25 ns | 25 ns | 25 ns | 25 ns | 25 ns | 25 ns |
认证状态 | Qualified | Qualified | Qualified | Qualified | Qualified | Qualified | Qualified | Qualified |
筛选级别 | 38535Q/M;38534H;883B | 38535V;38534K;883S | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535V;38534K;883S | 38535V;38534K;883S | 38535V;38534K;883S |
座面最大高度 | 2.921 mm | 5.08 mm | 5.08 mm | 5.08 mm | 2.921 mm | 5.08 mm | 2.921 mm | 2.921 mm |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | YES | NO | NO | NO | YES | NO | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
端子面层 | GOLD | GOLD | GOLD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | GOLD |
端子形式 | FLAT | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | FLAT | THROUGH-HOLE | FLAT | FLAT |
端子节距 | 1.27 mm | 2.54 mm | 2.54 mm | 2.54 mm | 1.27 mm | 2.54 mm | 1.27 mm | 1.27 mm |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
总剂量 | 1M Rad(Si) V | 1M Rad(Si) V | 1M Rad(Si) V | 1M Rad(Si) V | 1M Rad(Si) V | 1M Rad(Si) V | 1M Rad(Si) V | 1M Rad(Si) V |
宽度 | 6.731 mm | 7.62 mm | 7.62 mm | 7.62 mm | 6.731 mm | 7.62 mm | 6.731 mm | 6.731 mm |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
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