RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINIMOLD PACKAGE-4
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | NEC(日电) |
| 包装说明 | SMALL OUTLINE, R-PDSO-G4 |
| 针数 | 4 |
| Reach Compliance Code | compliant |
| 外壳连接 | SOURCE |
| 配置 | SINGLE |
| 最大漏极电流 (ID) | 0.025 A |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 0.03 pF |
| 最高频带 | ULTRA HIGH FREQUENCY BAND |
| JESD-30 代码 | R-PDSO-G4 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 4 |
| 工作模式 | DUAL GATE, DEPLETION MODE |
| 最高工作温度 | 125 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 最小功率增益 (Gp) | 15 dB |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | TIN LEAD |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| 3SK253-UAG | 3SK253-UAG-A | 3SK253-U1G-A | 3SK253-U1G | |
|---|---|---|---|---|
| 描述 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINIMOLD PACKAGE-4 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINIMOLD PACKAGE-4 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINIMOLD PACKAGE-4 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINIMOLD PACKAGE-4 |
| 是否Rohs认证 | 不符合 | 符合 | 符合 | 不符合 |
| 厂商名称 | NEC(日电) | NEC(日电) | NEC(日电) | NEC(日电) |
| 包装说明 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 |
| 针数 | 4 | 4 | 4 | 4 |
| Reach Compliance Code | compliant | compliant | compliant | compliant |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 最大漏极电流 (ID) | 0.025 A | 0.025 A | 0.025 A | 0.025 A |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 0.03 pF | 0.03 pF | 0.03 pF | 0.03 pF |
| 最高频带 | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND |
| JESD-30 代码 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 |
| JESD-609代码 | e0 | e6 | e6 | e0 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 4 | 4 | 4 | 4 |
| 工作模式 | DUAL GATE, DEPLETION MODE | DUAL GATE, DEPLETION MODE | DUAL GATE, DEPLETION MODE | DUAL GATE, DEPLETION MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最小功率增益 (Gp) | 15 dB | 15 dB | 15 dB | 15 dB |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES |
| 端子面层 | TIN LEAD | TIN BISMUTH | TIN BISMUTH | TIN LEAD |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 | 1 |
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