Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,
| 参数名称 | 属性值 |
| Reach Compliance Code | unknown |
| 最大集电极电流 (IC) | 15 A |
| 集电极-发射极最大电压 | 60 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 20 |
| JEDEC-95代码 | TO-3 |
| JESD-30 代码 | O-MBFM-P2 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 封装主体材料 | METAL |
| 封装形状 | ROUND |
| 封装形式 | FLANGE MOUNT |
| 极性/信道类型 | NPN |
| 功耗环境最大值 | 115 W |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | PIN/PEG |
| 端子位置 | BOTTOM |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 0.8 MHz |
| VCEsat-Max | 1 V |
| Base Number Matches | 1 |
| 2N3055C | 2N3055H | BDX10 | BDX10C | |
|---|---|---|---|---|
| 描述 | Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, | Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, | Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, | Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| 最大集电极电流 (IC) | 15 A | 15 A | 15 A | 15 A |
| 集电极-发射极最大电压 | 60 V | 60 V | 60 V | 60 V |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 20 | 20 | 20 | 20 |
| JEDEC-95代码 | TO-3 | TO-3 | TO-3 | TO-3 |
| JESD-30 代码 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 2 | 2 | 2 | 2 |
| 封装主体材料 | METAL | METAL | METAL | METAL |
| 封装形状 | ROUND | ROUND | ROUND | ROUND |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | NPN | NPN | NPN | NPN |
| 功耗环境最大值 | 115 W | 115 W | 115 W | 115 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO |
| 端子形式 | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 0.8 MHz | 0.8 MHz | 0.8 MHz | 0.8 MHz |
| VCEsat-Max | 1 V | 1 V | 1 V | 1 V |
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