Silicon N Channel MOSFET Series Power Switching
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Renesas(瑞萨电子) |
| 零件包装代码 | SC-63 |
| 包装说明 | SC-63, DPAK-3 |
| 针数 | 3 |
| Reach Compliance Code | unknow |
| ECCN代码 | EAR99 |
| 其他特性 | BUILT-IN OVER TEMPERATURE SHUT-DOWN CIRCUIT, LOGIC LEVEL COMPATIBLE |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 60 V |
| 最大漏极电流 (Abs) (ID) | 5 A |
| 最大漏极电流 (ID) | 5 A |
| 最大漏源导通电阻 | 0.12 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSSO-G2 |
| 湿度敏感等级 | 1 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 225 |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 20 W |
| 最大脉冲漏极电流 (IDM) | 10 A |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| HAF2007-90STL | HAF2007 | HAF2007-90L | HAF2007S | HAF2007L | HAF2007-90STR | HAF2007-90S | |
|---|---|---|---|---|---|---|---|
| 描述 | Silicon N Channel MOSFET Series Power Switching | Silicon N Channel MOSFET Series Power Switching | Silicon N Channel MOSFET Series Power Switching | Silicon N Channel MOSFET Series Power Switching | Silicon N Channel MOSFET Series Power Switching | Silicon N Channel MOSFET Series Power Switching | Silicon N Channel MOSFET Series Power Switching |
| 是否无铅 | 含铅 | - | 含铅 | - | - | 不含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | - | 不符合 | - | - | 符合 | 不符合 |
| 厂商名称 | Renesas(瑞萨电子) | - | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) |
| 包装说明 | SC-63, DPAK-3 | - | DPAK-3 | SMALL OUTLINE, R-PSSO-G2 | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G2 | SC-63, DPAK-3 |
| 针数 | 3 | - | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknow | - | unknow | compli | compli | compli | unknow |
| ECCN代码 | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | BUILT-IN OVER TEMPERATURE SHUT-DOWN CIRCUIT, LOGIC LEVEL COMPATIBLE | - | BUILT-IN OVER TEMPERATURE SHUT-DOWN CIRCUIT, LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | BUILT-IN OVER TEMPERATURE SHUT-DOWN CIRCUIT, LOGIC LEVEL COMPATIBLE | BUILT-IN OVER TEMPERATURE SHUT-DOWN CIRCUIT, LOGIC LEVEL COMPATIBLE |
| 外壳连接 | DRAIN | - | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 60 V | - | 60 V | 60 V | 60 V | 60 V | 60 V |
| 最大漏极电流 (Abs) (ID) | 5 A | - | 5 A | - | 5 A | 5 A | 5 A |
| 最大漏极电流 (ID) | 5 A | - | 5 A | 5 A | 5 A | 5 A | 5 A |
| 最大漏源导通电阻 | 0.12 Ω | - | 0.12 Ω | 0.12 Ω | 0.12 Ω | 0.12 Ω | 0.12 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSSO-G2 | - | R-PSIP-T3 | R-PSSO-G2 | R-PSIP-T3 | R-PSSO-G2 | R-PSSO-G2 |
| 元件数量 | 1 | - | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 2 | - | 3 | 2 | 3 | 2 | 2 |
| 工作模式 | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | - | 150 °C | - | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | - | IN-LINE | SMALL OUTLINE | IN-LINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 225 | - | 225 | - | - | NOT SPECIFIED | 225 |
| 极性/信道类型 | N-CHANNEL | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | 20 W | - | 20 W | - | 20 W | 20 W | 20 W |
| 最大脉冲漏极电流 (IDM) | 10 A | - | 10 A | 10 A | 10 A | 10 A | 10 A |
| 认证状态 | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | - | NO | YES | NO | YES | YES |
| 端子形式 | GULL WING | - | THROUGH-HOLE | GULL WING | THROUGH-HOLE | GULL WING | GULL WING |
| 端子位置 | SINGLE | - | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | NOT SPECIFIED | - | - | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | - | SILICON | SILICON | SILICON | SILICON | SILICON |
FPGA/CPLD
DSP 与 ARM 处理器
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模拟与混合信号
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