Datasheet> 器件分类 > 分立半导体> 晶体管> ZVN2110ASTOA

ZVN2110ASTOA: 产品描述Small Signal Field-Effect Transistor, 0.32A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3; 产品类别分立半导体晶体管; 文件大小56KB，共3页; 制造商Zetex Semiconductors; 官网地址http://www.zetex.com/; 标准

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ZVN2110ASTOA概述

Small Signal Field-Effect Transistor, 0.32A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZVN2110ASTOA规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Zetex Semiconductors
包装说明	IN-LINE, R-PSIP-W3
Reach Compliance Code	not_compliant
ECCN代码	EAR99
Is Samacsys	N
配置	SINGLE
最小漏源击穿电压	100 V
最大漏极电流 (ID)	0.32 A
最大漏源导通电阻	4 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PSIP-W3
JESD-609代码	e3
湿度敏感等级	1
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	200 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	IN-LINE
峰值回流温度（摄氏度）	260
极性/信道类型	N-CHANNEL
认证状态	Not Qualified
表面贴装	NO
端子面层	Matte Tin (Sn)
端子形式	WIRE
端子位置	SINGLE
处于峰值回流温度下的最长时间	40
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

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N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 – MARCH 94

FEATURES

* 100 Volt V

* R

DS(on)

= 4Ω

ZVN2110A

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at T

amb

=25°C

Pulsed Drain Current

Gate Source Voltage

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

tot

stg

VALUE

100

320

700

-55 to +150

UNIT

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Drain-Source Breakdown

Voltage

Gate-Source Threshold

Voltage

Gate-Body Leakage

Zero Gate Voltage Drain

Current

On-State Drain Current(1)

Static Drain-Source On-State

Resistance (1)

Forward Transconductance

(1)(2)

Input Capacitance (2)

Common Source Output

Capacitance (2)

Reverse Transfer

Capacitance (2)

Turn-On Delay Time (2)(3)

Rise Time (2)(3)

Turn-Off Delay Time (2)(3)

Fall Time (2)(3)

SYMBOL MIN.

DSS

GS(th)

GSS

DSS

D(on)

DS(on)

iss

oss

rss

d(on)

d(off)

250

1.5

100

0.8

2.4

100

MAX.

UNIT CONDITIONS.

µA

Ω

≈25V,

=1A

=25 V, V

=0V, f=1MHz

=1mA, V

=0V

ID=1mA, V

= V

=± 20V, V

=0V

=100V, V

=80V, V

=0V, T=125°C

(2)

=25V, V

=10V

=10V,I

=1A

=25V,I

=1A

(1) Measured under pulsed conditions. Width=300µs. Duty cycle

≤2%

(2) Sample test

(3) Switching times measured with 50

Ω

source impedance and <5ns rise time on a pulse generator

ZVN2110ASTOA相似产品对比

	ZVN2110ASTOA	GRM1552C1E5R4BA01	ZVN2110ASTOB
描述	Small Signal Field-Effect Transistor, 0.32A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Chip Multilayer Ceramic Capacitors for General Purpose	Small Signal Field-Effect Transistor, 0.32A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
是否Rohs认证	符合	-	符合
厂商名称	Zetex Semiconductors	-	Zetex Semiconductors
包装说明	IN-LINE, R-PSIP-W3	-	IN-LINE, R-PSIP-W3
Reach Compliance Code	not_compliant	-	not_compliant
ECCN代码	EAR99	-	EAR99
Is Samacsys	N	-	N
配置	SINGLE	-	SINGLE
最小漏源击穿电压	100 V	-	100 V
最大漏极电流 (ID)	0.32 A	-	0.32 A
最大漏源导通电阻	4 Ω	-	4 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PSIP-W3	-	R-PSIP-W3
JESD-609代码	e3	-	e3
湿度敏感等级	1	-	1
元件数量	1	-	1
端子数量	3	-	3
工作模式	ENHANCEMENT MODE	-	ENHANCEMENT MODE
最高工作温度	200 °C	-	200 °C
封装主体材料	PLASTIC/EPOXY	-	PLASTIC/EPOXY
封装形状	RECTANGULAR	-	RECTANGULAR
封装形式	IN-LINE	-	IN-LINE
峰值回流温度（摄氏度）	260	-	260
极性/信道类型	N-CHANNEL	-	N-CHANNEL
认证状态	Not Qualified	-	Not Qualified
表面贴装	NO	-	NO
端子面层	Matte Tin (Sn)	-	Matte Tin (Sn)
端子形式	WIRE	-	WIRE
端子位置	SINGLE	-	SINGLE
处于峰值回流温度下的最长时间	40	-	40
晶体管应用	SWITCHING	-	SWITCHING
晶体管元件材料	SILICON	-	SILICON
Base Number Matches	1	-	1

ZVN2110ASTOA

ZVN2110ASTOA在线购买

ZVN2110ASTOA概述

ZVN2110ASTOA规格参数

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ZVN2110ASTOA相似产品对比

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