Datasheet> 器件分类 > 存储> 存储> HY27SF161G2M-TCB

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HY27SF161G2M-TCB: 产品描述Flash, 64MX16, 30ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48; 产品类别存储存储; 文件大小473KB，共48页; 制造商SK Hynix(海力士); 官网地址http://www.hynix.com/eng/

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HY27SF161G2M-TCB概述

Flash, 64MX16, 30ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48

HY27SF161G2M-TCB规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	SK Hynix(海力士)
零件包装代码	TSOP1
包装说明	TSOP1, TSSOP48,.8,20
针数	48
Reach Compliance Code	compliant
ECCN代码	3A991.B.1.A
最长访问时间	30 ns
命令用户界面	YES
数据轮询	NO
JESD-30 代码	R-PDSO-G48
JESD-609代码	e0
长度	18.4 mm
内存密度	1073741824 bit
内存集成电路类型	FLASH
内存宽度	16
功能数量	1
部门数/规模	1K
端子数量	48
字数	67108864 words
字数代码	64000000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	64MX16
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP1
封装等效代码	TSSOP48,.8,20
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
页面大小	1K words
并行/串行	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	1.8 V
编程电压	1.8 V
认证状态	Not Qualified
就绪/忙碌	YES
座面最大高度	1.2 mm
部门规模	64K
最大待机电流	0.00005 A
最大压摆率	0.015 mA
最大供电电压 (Vsup)	1.95 V
最小供电电压 (Vsup)	1.7 V
标称供电电压 (Vsup)	1.8 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子节距	0.5 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
切换位	NO
类型	NAND TYPE
宽度	12 mm
Base Number Matches	1

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Preliminary

HY27UF(08/16)1G2M Series

HY27SF(08/16)1G2M Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

Document Title

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory

Revision History

Revision

No.

0.0

1) Initial Draft.

1) Correct Fig.10 Sequential out cycle after read

2) Add the text to Fig.1, Table.1, Table.2

- text : IO15 - IO8 (x16 only)

3) Delete ‘3.2 Page program NOTE 1.

- Note : if possible it is better to remove this constrain

4) Change the text ( page 10,13, 45)

- 2.2 Address Input : 28 Addresses -> 27 Addresses

- 3.7 Reset : Fig.29 -> Fig.30

- 5.1 Automatic page read after power up : Fig.30 -> Fig.29

5) Add 5.3 Addressing for program operation & Fig.34

1) Change TSOP, WSOP, FBGA package dimension & figures.

- Change TSOP, WSOP, FBGA package mechanical data

- Change FBGA thickness (1.2 -> 1.0 mm)

2) Correct TSOP, WSOP Pin configurations.

- 38th NC pin has been changed Lockpre(figure

3,4)

3) Edit figure 15,19 & table 4

4) Add Bad Block Management

5) Change Device Identifier 3rd Byte

- 3rd Byte ID is changed. (reserved -> don't care)

- 3rd Byte ID table is deleted.

1) Add Errata

tCLS

Specification

Relaxed value

tCLH

tWP

tALS

tALH

tDS

tWC

History

Draft Date

Aug. 2004

Remark

Preliminary

0.1

Sep. 2004

Preliminary

0.2

Oct. 2004

Preliminary

0.3

0.4

2) LOCKPRE is changed to PRE.

- Texts, Table, Figures are changed.

3) Add Note.4 (table.14)

4) Block Lock Mechanism is deleted.

- Texts, Table, figures are deleted.

5) Add Application Note(Power-On/Off Sequence & Auto Sleep mode.)

- Texts & Figures are added.

6) Edit the figures. (#10~25)

1) Change AC characteristics(tREH)

before: 20ns -> after: 30ns

2) Edit Note.1 (page. 21)

3) Edit the Application note 1,2

4) Edit The Address cycle map (x8, x16)

Nov.29 2004

Preliminary

Jan.19 2005

Preliminary

Rev 0.7 / Apr. 2005

Preliminary

HY27UF(08/16)1G2M Series

HY27SF(08/16)1G2M Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

1. SUMMARY DESCRIPTION

The HYNIX HY27(U/S)F(08/16)1G2M series is a 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V

Vcc Power Supply and in 3.3V Vcc Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old

data is erased.

The device contains 1024 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected

Flash cells.

A program operation allows to write the 2112-byte page in typical 300us and an erase operation can be performed in

typical 2ms on a 128K-byte(X8 device) block.

Data in the page mode can be read out at 60ns

(1)

cycle time per word. The I/O pins serve as the ports for address and

data input/output as well as command input. This interface allows a reduced pin count and easy migration towards dif-

ferent densities, without any rearrangement of footprint.

Commands, Data and Addresses are synchronously introduced using CE#, WE#, ALE and CLE input pin.

The on-chip Program/Erase Controller automates all program and erase functions including pulse repetition, where

required, and internal verification and margining of data.

The modifying can be locked using the WP# input pin.

The output pin RB# (open drain buffer) signals the status of the device during each operation. In a system with mul-

tiple memories the RB# pins can be connected all together to provide a global status signal.

Even the write-intensive systems can take advantage of the HY27(U/S)F(08/16)1G2M extended reliability of 100K pro-

gram/erase cycles by providing ECC (Error Correcting Code) with real time mapping-out algorithm.

Optionally the chip could be offered with the CE# don’t care function. This option allows the direct download of the

code from the NAND Flash memory device by a microcontroller, since the CE# transitions do not stop the read opera-

tion.

The copy back function allows the optimization of defective blocks management: when a page program operation fails

the data can be directly programmed in another page inside the same array section without the time consuming serial

data insertion phase.

The cache program feature allows the data insertion in the cache register while the data register is copied into the

flash array. This pipelined program operation improves the program throughput when long files are written inside the

memory.

A cache read feature is also implemented. This feature allows to dramatically improve the read throughput when con-

secutive pages have to be streamed out.

This device includes also extra features like OTP/Unique ID area, Automatic Read at Power Up, Read ID2 extension.

The HYNIX HY27(U/S)F(08/16)1G2M series is available in 48 - TSOP1 12 x 20 mm , 48 - WSOP1 12 x 17 mm,

FBGA 9.5 x 12 mm.

1.1 Product List

PART NUMBER

HY27SF081G2M

HY27SF161G2M

HY27UF081G2M

HY27UF161G2M

ORIZATION

x16

VCC RANGE

1.70 - 1.95 Volt

63FBGA / 48TSOP1 / 48WSOP1

2.7V - 3.6 Volt

PACKAGE

NOTE:

1. This parameters is applied to the errata.

Rev 0.7 / Apr. 2005

HY27SF161G2M-TCB相似产品对比

	HY27SF161G2M-TCB	HY27SF161G2M-TPEP	HY27SF161G2M-TPEB	HY27SF161G2M-TPIS	HY27SF161G2M-TPES	HY27SF161G2M-TPIB	HY27SF161G2M-TPCS	HY27SF161G2M-TPCB	HY27SF161G2M-TPCP
描述	Flash, 64MX16, 30ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48	Flash, 64MX16, 30ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48	Flash, 64MX16, 30ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48	Flash, 64MX16, 30ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48	Flash, 64MX16, 30ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48	Flash, 64MX16, 30ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48	Flash, 64MX16, 30ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48	Flash, 64MX16, 30ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48	Flash, 64MX16, 30ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48
是否无铅	含铅	不含铅	不含铅	不含铅	不含铅	不含铅	不含铅	不含铅	不含铅
是否Rohs认证	不符合	符合	符合	符合	符合	符合	符合	符合	符合
厂商名称	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)
零件包装代码	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1
包装说明	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20
针数	48	48	48	48	48	48	48	48	48
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A
最长访问时间	30 ns	30 ns	30 ns	30 ns	30 ns	30 ns	30 ns	30 ns	30 ns
命令用户界面	YES	YES	YES	YES	YES	YES	YES	YES	YES
数据轮询	NO	NO	NO	NO	NO	NO	NO	NO	NO
JESD-30 代码	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48
JESD-609代码	e0	e6	e6	e6	e6	e6	e6	e6	e6
长度	18.4 mm	18.4 mm	18.4 mm	18.4 mm	18.4 mm	18.4 mm	18.4 mm	18.4 mm	18.4 mm
内存密度	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit
内存集成电路类型	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH
内存宽度	16	16	16	16	16	16	16	16	16
功能数量	1	1	1	1	1	1	1	1	1
部门数/规模	1K	1K	1K	1K	1K	1K	1K	1K	1K
端子数量	48	48	48	48	48	48	48	48	48
字数	67108864 words	67108864 words	67108864 words	67108864 words	67108864 words	67108864 words	67108864 words	67108864 words	67108864 words
字数代码	64000000	64000000	64000000	64000000	64000000	64000000	64000000	64000000	64000000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	85 °C	85 °C	85 °C	85 °C	85 °C	70 °C	70 °C	70 °C
最低工作温度	-	-25 °C	-25 °C	-40 °C	-25 °C	-40 °C	-	-	-
组织	64MX16	64MX16	64MX16	64MX16	64MX16	64MX16	64MX16	64MX16	64MX16
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1
封装等效代码	TSSOP48,.8,20	TSSOP48,.8,20	TSSOP48,.8,20	TSSOP48,.8,20	TSSOP48,.8,20	TSSOP48,.8,20	TSSOP48,.8,20	TSSOP48,.8,20	TSSOP48,.8,20
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
页面大小	1K words	1K words	1K words	1K words	1K words	1K words	1K words	1K words	1K words
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED	260	260	260	260	260	260	260	260
电源	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
编程电压	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
就绪/忙碌	YES	YES	YES	YES	YES	YES	YES	YES	YES
座面最大高度	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
部门规模	64K	64K	64K	64K	64K	64K	64K	64K	64K
最大待机电流	0.00005 A	0.00005 A	0.00005 A	0.00005 A	0.00005 A	0.00005 A	0.00005 A	0.00005 A	0.00005 A
最大压摆率	0.015 mA	0.015 mA	0.015 mA	0.015 mA	0.015 mA	0.015 mA	0.015 mA	0.015 mA	0.015 mA
最大供电电压 (Vsup)	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V
最小供电电压 (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V
标称供电电压 (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	OTHER	OTHER	INDUSTRIAL	OTHER	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)	TIN BISMUTH	TIN BISMUTH	TIN BISMUTH	TIN BISMUTH	TIN BISMUTH	TIN BISMUTH	TIN BISMUTH	TIN BISMUTH
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子节距	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	20	20	20	20	20	20	20	20
切换位	NO	NO	NO	NO	NO	NO	NO	NO	NO
类型	NAND TYPE	NAND TYPE	NAND TYPE	NAND TYPE	NAND TYPE	NAND TYPE	NAND TYPE	NAND TYPE	NAND TYPE
宽度	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm
Base Number Matches	1	1	1	1	1	1	1	1	1

HY27SF161G2M-TCB

HY27SF161G2M-TCB概述

HY27SF161G2M-TCB规格参数

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HY27SF161G2M-TCB相似产品对比

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