Power Field-Effect Transistor, 5.5A I(D), 400V, 1.05ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL PACKAGE-16
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | International Rectifier （ Infineon ） |
| 包装说明 | FLANGE MOUNT, R-MDFM-F16 |
| Reach Compliance Code | compliant |
| 其他特性 | HIGH RELIABILITY |
| 外壳连接 | ISOLATED |
| 配置 | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 400 V |
| 最大漏极电流 (ID) | 5.5 A |
| 最大漏源导通电阻 | 1.05 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-MDFM-F16 |
| JESD-609代码 | e0 |
| 元件数量 | 4 |
| 端子数量 | 16 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | METAL |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | 235 |
| 极性/信道类型 | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 20 A |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | TIN LEAD |
| 端子形式 | FLAT |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | 30 |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| OM6407SDT | OM6405SDT | OM6406SD | OM6406SDT | OM6406SDV | OM6408SDV | OM6408SDT | |
|---|---|---|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 5.5A I(D), 400V, 1.05ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL PACKAGE-16 | Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL PACKAGE-16 | Power Field-Effect Transistor, 9A I(D), 200V, 0.44ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL PACKAGE-16 | Power Field-Effect Transistor, 9A I(D), 200V, 0.44ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL PACKAGE-16 | Power Field-Effect Transistor, 9A I(D), 200V, 0.44ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL PACKAGE-16 | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.6ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL PACKAGE-16 | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.6ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL PACKAGE-16 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） |
| 包装说明 | FLANGE MOUNT, R-MDFM-F16 | FLANGE MOUNT, R-MDFM-F16 | FLANGE MOUNT, R-MDFM-F16 | FLANGE MOUNT, R-MDFM-F16 | FLANGE MOUNT, R-MDFM-F16 | FLANGE MOUNT, R-MDFM-F16 | FLANGE MOUNT, R-MDFM-F16 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
| 其他特性 | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
| 外壳连接 | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| 配置 | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 400 V | 100 V | 200 V | 200 V | 200 V | 500 V | 500 V |
| 最大漏极电流 (ID) | 5.5 A | 14 A | 9 A | 9 A | 9 A | 4.5 A | 4.5 A |
| 最大漏源导通电阻 | 1.05 Ω | 0.2 Ω | 0.44 Ω | 0.44 Ω | 0.44 Ω | 1.6 Ω | 1.6 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-MDFM-F16 | R-MDFM-F16 | R-MDFM-F16 | R-MDFM-F16 | R-MDFM-F16 | R-MDFM-F16 | R-MDFM-F16 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 元件数量 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
| 端子数量 | 16 | 16 | 16 | 16 | 16 | 16 | 16 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | METAL | METAL | METAL | METAL | METAL | METAL | METAL |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | 235 | 235 | 235 | 235 | 235 | 235 | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 20 A | 30 A | 25 A | 25 A | 25 A | 18 A | 18 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES |
| 端子面层 | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
| 端子形式 | FLAT | FLAT | FLAT | FLAT | FLAT | FLAT | FLAT |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | 30 | 30 | 30 | 30 | 30 | 30 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 针数 | - | 16 | 16 | 16 | 16 | - | - |
| ECCN代码 | - | EAR99 | EAR99 | EAR99 | EAR99 | - | - |
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