Data Sheet
PT7C5021 series
Crystal Oscillator Module ICs
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Features
•
•
•
•
•
•
•
•
•
•
•
Stable 3rd overtone oscillation
Capacitors CG(8pF) and CD(12pF or 15pF) built-
in
Inverter amplifier feedback resistor built-in
(PT7C5021Ax, Bx)
TTL input level
4mA (VDD = 2.7 V) drive capability and 8mA
(VDD = 4.5 V) drive capability
Output three-state function
2.7 to 5.5 V supply voltage (PT7C5021Ax, Kx)
4.5 to 5.5 V supply voltage (PT7C5021Bx, Lx)
Oscillator frequency output
6-pin SOT23 package
Description
The PT7C5021 series are crystal oscillator module
ICs that incorporate high-frequency, low current
consumption oscillator and output buffer circuits.
Highly accurate thin-film feedback resistors and high-
frequency capacitors are built-in, eliminating the need
for external components to make a stable 3rd overtone
oscillator.
Ordering Information
Part no.
PT7C5021xxTA
PT7C5021xxTAE
Package type
6-pin SOT23
Lead free 6-pin SOT23
Note:
Below is the detailed definition of part no.
Application
Used for crystal oscillator
PT7C
Device Type
Clock Series
Clock series
XO 5021 Series
5021
A
A
TA
Package
TA: SOT23-6
TA:SOT23
TAE: Lead free SOT23-6
Series
A
B
C
D
E
A
B
C
D
D
E
D
Output
level
Rf
(kΩ)
6.0
3.3
3.9
2.7
2.7
6.0
3.3
3.9
2.7
x
x
x
A
CMOS
B
TTL
K
L
CMOS
TTL
Operating freq.(MHz)
V
DD
=3V
V
DD
=5V
x
22½30
22½30
30½43
30½40
43½55
40½50
55½70
50½70
x
22½30
30½43
x
43½55
55½70
22½50
22½70
50½70
x
x
22½70
PT0221(09/06)
1
Ver:1
Data Sheet
PT7C5021 series
Crystal Oscillator Module ICs
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Series Configuration
Series
Part No.
Output
freq.
V
DD
(V)
Die
4.5½5.5
2.7½5.5
2.7½3.6
SOT
4.5½5.5
2.7½5.5
x
Operating freq.
*1
(MHz)
V
DD
=3V V
DD
=5V
x
22½30
22½30
30½43
30½40
43½55
40½50
55½70
x
50½70
22½30
30½43
x
43½55
55½70
*2
22½70
*2
22½50
x
50½70
*2
x
22½70
*2
gm
ratio
1
2
3
4
1
2
3
3
4
3
Rf
(kΩ)
6.0
3.3
3.9
2.7
6.0
3.3
3.9
2.7
-
-
Output
level
Standby
output
state
PT7C5021AATA
PT7C5021ABTA
A PT7C5021ACTA
PT7C5021ADTA
PT7C5021AETA
PT7C5021BATA
PT7C5021BBTA
B
PT7C5021BCTA
PT7C5021BDTA
PT7C5021KDTA
K
PT7C5021KETA
L
PT7C5021LDTA
fo
CMOS
High
impedance
fo
4.5½5.5
4.5½5.5
TTL
High
impedance
High
impedance
High
impedance
fo
fo
2.7½5.5
2.7½3.6
4.5½5.5
2.7½5.5
2.7½3.6
4.5½5.5
CMOS
TT L
Note:
*1.The operating frequency is a yardstick value derived form the crystal used for PTI characteristics authentication. However, the
oscillator for frequency band is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and
mounting conditions, so the oscillation of components must be carefully evaluated.
*2. The 3rd overtone frequency range uses an external resistor to set the cutoff frequency.
See Recommended Operating Conditions in Page 4.
Block Diagram
VDD
XT
GND
X'tal
R
fo
C
G
XT
R
f
C
D
Q
INH
Function Description
________
INH
HIGH (or open)
Low
Q
f
O
High impedance
Oscillator
Normal operation
When INH goes LOW, the output on Q becomes high impedance.
PT0221(09/06)
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Ver:1
Data Sheet
PT7C5021 series
Crystal Oscillator Module ICs
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Pin Configuration
PT7C5021xxTA
1 INH
2
3
XT
GND
XT
6
VDD 5
Q
4
Pin Description
Pin
1
2
6
3
4
5
Sym.
INH
XT
XT
GND
Q
VDD
Type
I
I
O
P
O
P
Description
Output state control input. High impedance when LOW. Pull-up resistor built in.
Amplifier input.
Amplifier output.
Ground
Output. Output frequency (fo), fo is oscillator frequency.
Supply voltage
Crystal oscillator connected between XT and XT
PT0221(09/06)
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Ver:1
Data Sheet
PT7C5021 series
Crystal Oscillator Module ICs
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Maximum Ratings
Storage Temperature (die form).....................................................- 65oC to +150oC
Storage Temperature (package form) ........................................- 55oC to +125oC
Ambient Temperature with Power Applied..............................................- 40oC to +85oC
Supply Voltage to Ground Potential (V
DD
to GND).............- 0.5V to +7.0V
DC Input (All Other Inputs except V
DD
& GND) . -0.5V to V
DD
+0.5V
DC Output............................................................. -0.5V to V
DD
+0.5V
DC Output Current (all outputs) ................................................. 13mA
Power Dissipation......................................................................250mW (package form)
Note:
Stresses greater than those listed under
MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating
only and functional operation of the device at
these or any other condi-tions above those
indicated in the operational sec-tions of this
specification is not implied. Exposure to
absolute maximum rating conditions for
extended periods may affect reliability.
Recommended Operating Conditions
Sym.
V
DD
V
IN
T
A
Parameter
Supply voltage
Input voltage
Operating temperature
All series
GND=0V, f
≤
70MHz, C
L
≤
15pF
Series
Conditions
Min
2.7
0
-20
Typ
-
-
-
Max
5.5
V
DD
+80
Unit
V
V
°C
Note:
Recommended operating conditions will change in accordance with operating frequency, load capacitance or power
dissipation.
PT0221(09/06)
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Ver:1
Data Sheet
PT7C5021 series
Crystal Oscillator Module ICs
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DC Electrical Characteristics
3V operation: V
DD
= 2.7 to 3.6V, PT7C5021Ax, PT7C5021Kx, T
A
= -20 to 85°C, unless otherwise noted.
Sym
I
DD
Parameter
Current consumption
Conditions
INH = open, Measurement cct 3,
70 MHz crystal,
load cct 1, C
L
= 15pF
PT7C5021Ax
PT7C5021Kx
V
OH
= V
DD
V
OL
= GND
PT7C5021AA
PT7C5021AB
R
f
Feedback resistance
Measurement cct 5
PT7C5021AC
PT7C5021AD
PT7C5021AE
PT7C5021Ax
PT7C5021Kx
PT7C5021AA
PT7C5021AB
PT7C5021AC
PT7C5021AD
PT7C5021KD
PT7C5021AE
PT7C5021KE
PT7C5021AA
PT7C5021AB
PT7C5021AC
PT7C5021AD
PT7C5021KD
PT7C5021AE
PT7C5021KE
PT7C5021AA
PT7C5021AB
PT7C5021AC
PT7C5021AD
PT7C5021KD
PT7C5021AE
PT7C5021KE
Min
-
2.0
-
25
-
-
5.1
2.8
3.3
2.3
7.44
Typ
13
-
-
100
-
-
6.0
3.3
3.9
2.7
8
Max
25
-
0.5
250
10
10
6.9
3.8
4.5
3.1
8.56
kΩ
µA
Unit
mA
V
V
kΩ
V
IH
High level input voltage INH pin
V
IL
Low level input voltage
R
UP
INH pull-up resistance
I
Z
Output leakage current
INH pin
Measurement cct 4,
Q: measurement cct2,
V
DD
=3.3V,
INH=LOW
C
G
Design value, determined by the
internal wafer pattern
Built-in capacitance
C
D
13.95
15
16.05
pF
11.16
12
12.84
V
OH
High level output
voltage
Q: measurement cct1,
V
DD
= 2.7V,
I
OH
=4mA
2.1
2.4
-
V
I
OH
=8mA
V
OL
Q: measurement cct2,
Low level output voltage
V
DD
= 2.7V,
I
OL
=4mA
-
0.3
0.4
V
I
OL
=8mA
Note:
The parameter R
f
(Feedback resistance) is only for PT7C5021Ax series.
PT0221(09/06)
5
Ver:1
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