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RT3PE600L-1CQ256B

产品描述Field Programmable Gate Array, 13824 CLBs, 600000 Gates, 250MHz, 13824-Cell, CMOS, CQFP256, CERAMIC, MO-134AB, QFP-256
产品类别可编程逻辑器件    可编程逻辑   
文件大小5MB,共144页
制造商Actel
官网地址http://www.actel.com/
下载文档 详细参数 选型对比 全文预览

RT3PE600L-1CQ256B概述

Field Programmable Gate Array, 13824 CLBs, 600000 Gates, 250MHz, 13824-Cell, CMOS, CQFP256, CERAMIC, MO-134AB, QFP-256

RT3PE600L-1CQ256B规格参数

参数名称属性值
是否Rohs认证不符合
包装说明CERAMIC, MO-134AB, QFP-256
Reach Compliance Codeunknown
最大时钟频率250 MHz
JESD-30 代码S-CQFP-F256
长度36 mm
可配置逻辑块数量13824
等效关口数量600000
逻辑单元数量13824
端子数量256
最高工作温度125 °C
最低工作温度-55 °C
组织13824 CLBS, 600000 GATES
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装代码QFF
封装等效代码TPAK256,3SQ,20
封装形状SQUARE
封装形式FLATPACK
电源1.2/1.5,1.2/3.3 V
可编程逻辑类型FIELD PROGRAMMABLE GATE ARRAY
认证状态Not Qualified
筛选级别MIL-STD-883 Class B
座面最大高度3.3 mm
最大供电电压1.575 V
最小供电电压1.14 V
标称供电电压1.425 V
表面贴装YES
技术CMOS
温度等级MILITARY
端子形式FLAT
端子节距0.5 mm
端子位置QUAD
宽度36 mm
Base Number Matches1

文档预览

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Advance v0.2
Radiation-Tolerant ProASIC3 Low-Power Space-
Flight Flash FPGAs
with Flash*Freeze Technology
Features and Benefits
MIL-STD-883 Class B Qualified Packaging
• Ceramic Column Grid Array with Six Sigma Copper-
Wrapped Lead-Tin Columns
• Land Grid Array
• High-Performance, Low-Skew Global Network
• Architecture Supports Ultra-High Utilization
®
Advanced and Pro (Professional) I/Os
• 700 Mbps DDR, LVDS-Capable I/Os
• 1.2 V, 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage
Operation
• Bank-Selectable I/O Voltages—up to 8 Banks per Chip
• Single-Ended I/O Standards: LVTTL, LVCMOS 3.3 V /
2.5 V / 1.8 V / 1.5 V / 1.2 V, 3.3 V PCI / 3.3 V PCI-X, and
LVCMOS 2.5 V / 5.0 V Input
• Differential I/O Standards: LVPECL, LVDS, B-LVDS, and M-LVDS
• Voltage-Referenced I/O Standards: GTL+ 2.5 V / 3.3 V, GTL
2.5 V / 3.3 V, HSTL Class I and II, SSTL2 Class I and II, SSTL3
Class I and II (RT3PE3000L only)
• I/O Registers on Input, Output, and Enable Paths
• Hot-Swappable and Cold-Sparing I/Os
• Programmable Output Slew Rate and Drive Strength
• Programmable Input Delay (RT3PE3000L only)
• Schmitt Trigger Option on Single-Ended Inputs
(RT3PE3000L)
• Weak Pull-Up/-Down
• IEEE 1149.1 (JTAG) Boundary Scan Test
• Pin-Compatible Packages across the Radiation-Tolerant
ProASIC
®
3 Family
Low Power
• Dramatic Reduction in Dynamic and Static Power
• 1.2 V to 1.5 V Core and I/O Voltage Support for Low
Power
• Low Power Consumption in Flash*Freeze Mode Enables
Instantaneous Entry To / Exit From Low-Power
Flash*Freeze Mode
• Supports Single-Voltage System Operation
• Low-Impedance Switches
Radiation Tolerant
• 15 krad Total Ionizing Dose (TID)
• Wafer-Lot-Specific TID Reports
High Capacity
• 600 k to 3 M System Gates
• Up to 504 kbits of True Dual-Port SRAM
• Up to 620 User I/Os
Reprogrammable Flash Technology
• 130-nm, 7-Layer Metal (6 Copper), Flash-Based CMOS
Process
• Live-at-Power-Up (LAPU) Level 0 Support
• Single-Chip Solution
• Retains Programmed Design when Powered Off
Clock Conditioning Circuit (CCC) and PLL
• Six CCC Blocks, All with Integrated PLL (RT ProASIC3)
• Configurable Phase Shift, Multiply/Divide, Delay
Capabilities, and External Feedback
• Wide Input Frequency Range 1.5 MHz to 250 MHz (1.2 V
systems) and 350 MHz (1.5 V systems)
High Performance
• 350 MHz (1.5 V) and 250 MHz (1.2 V) System Performance
• 3.3 V, 66 MHz, 66-Bit PCI (1.5 V); 66 MHz, 32-Bit PCI (1.2 V)
SRAMs and FIFOs
• Variable-Aspect-Ratio 4,608-Bit RAM Blocks (×1, ×2, ×4,
×9, and ×18 organizations available)
• True Dual-Port SRAM (except ×18)
• 24 SRAM and FIFO Blocks with Synchronous Operation:
– 250 MHz: For 1.2 V Systems
– 350 MHz: For 1.5 V Systems
RT3PE3000L
3M
75,264
504
112
1k
Yes
6
18
8
620
CG/LG484, CG/LG896
CQ256
In-System Programming (ISP) and Security
• Secure ISP Using On-Chip 128-Bit Advanced Encryption
Standard (AES) Decryption via JTAG (IEEE 1532–compliant)
• FlashLock
®
to Secure FPGA Contents
High-Performance Routing Hierarchy
• Segmented, Hierarchical Routing and Clock Structure
RT ProASIC3 Devices
System Gates
VersaTiles (D-flip-flops)
RAM kbits (1,024 bits)
4,608-Bit Blocks
FlashROM Bits
Secure (AES) ISP
Integrated PLL in CCCs
VersaNet Globals
I/O Banks
Maximum User I/Os
Package Pins
CCGA/LGA
CQFP
RT3PE600L
600 k
13,824
108
24
1k
Yes
6
18
8
270
CG/LG484
CQ256
Table I-1 •
Radiation-Tolerant (RT) ProASIC3 Low-Power Space-Flight FPGAs
November 2009
© 2009 Actel Corporation
I

RT3PE600L-1CQ256B相似产品对比

RT3PE600L-1CQ256B RT3PE600L-CQ256B RT3PE3000L-1CQ256B RT3PE3000L-CQ256B
描述 Field Programmable Gate Array, 13824 CLBs, 600000 Gates, 250MHz, 13824-Cell, CMOS, CQFP256, CERAMIC, MO-134AB, QFP-256 Field Programmable Gate Array, 13824 CLBs, 600000 Gates, 250MHz, 13824-Cell, CMOS, CQFP256, CERAMIC, MO-134AB, QFP-256 Field Programmable Gate Array, 75264 CLBs, 3000000 Gates, 250MHz, 75264-Cell, CMOS, CQFP256, CERAMIC, MO-134AB, QFP-256 Field Programmable Gate Array, 75264 CLBs, 3000000 Gates, 250MHz, 75264-Cell, CMOS, CQFP256, CERAMIC, MO-134AB, QFP-256
是否Rohs认证 不符合 不符合 不符合 不符合
包装说明 CERAMIC, MO-134AB, QFP-256 CERAMIC, MO-134AB, QFP-256 CERAMIC, MO-134AB, QFP-256 CERAMIC, MO-134AB, QFP-256
Reach Compliance Code unknown unknown unknow unknow
最大时钟频率 250 MHz 250 MHz 250 MHz 250 MHz
JESD-30 代码 S-CQFP-F256 S-CQFP-F256 S-CQFP-F256 S-CQFP-F256
长度 36 mm 36 mm 36 mm 36 mm
可配置逻辑块数量 13824 13824 75264 75264
等效关口数量 600000 600000 3000000 3000000
逻辑单元数量 13824 13824 75264 75264
端子数量 256 256 256 256
最高工作温度 125 °C 125 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C
组织 13824 CLBS, 600000 GATES 13824 CLBS, 600000 GATES 75264 CLBS, 3000000 GATES 75264 CLBS, 3000000 GATES
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装代码 QFF QFF QFF QFF
封装等效代码 TPAK256,3SQ,20 TPAK256,3SQ,20 TPAK256,3SQ,20 TPAK256,3SQ,20
封装形状 SQUARE SQUARE SQUARE SQUARE
封装形式 FLATPACK FLATPACK FLATPACK FLATPACK
电源 1.2/1.5,1.2/3.3 V 1.2/1.5,1.2/3.3 V 1.2/1.5,1.2/3.3 V 1.2/1.5,1.2/3.3 V
可编程逻辑类型 FIELD PROGRAMMABLE GATE ARRAY FIELD PROGRAMMABLE GATE ARRAY FIELD PROGRAMMABLE GATE ARRAY FIELD PROGRAMMABLE GATE ARRAY
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
筛选级别 MIL-STD-883 Class B MIL-STD-883 Class B MIL-STD-883 Class B MIL-STD-883 Class B
座面最大高度 3.3 mm 3.3 mm 3.3 mm 3.3 mm
最大供电电压 1.575 V 1.575 V 1.575 V 1.575 V
最小供电电压 1.14 V 1.14 V 1.14 V 1.14 V
标称供电电压 1.425 V 1.425 V 1.425 V 1.425 V
表面贴装 YES YES YES YES
技术 CMOS CMOS CMOS CMOS
温度等级 MILITARY MILITARY MILITARY MILITARY
端子形式 FLAT FLAT FLAT FLAT
端子节距 0.5 mm 0.5 mm 0.5 mm 0.5 mm
端子位置 QUAD QUAD QUAD QUAD
宽度 36 mm 36 mm 36 mm 36 mm

 
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