HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1999.11.01
Revised Date : 200011.01
Page No. : 1/5
HSK2474J
N - Channel MOSFETs
Description
•
Dynamic dv/dt Rating
•
Repetitive Avalanche rated
•
Surface Mount
•
Straigh Lead
•
Available in Tape&Reel
•
Fast Switching
•
Ease of Paralleling
Features
•
Low Drain-Source ON Resistance - R
DS(ON)
=1.2Ω(Typ.)@ V
DS
=10V, I
D
=1.3A
•
High Forward Transfer Admittance -|Yfs|=1.2S@V
DS
=50V, I
D
=1.3A
•
Low Leakage Current - I
DSS
=100uA (Max.)@V
DS
=200V
•
Enhancement-Mode - V
th
= 2.0~4.0V@V
DS
=4V, I
D
=250uA
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 25 W
•
Maximum Voltages and Currents
Drain to Source Breakdown Voltage ................................................................................. 250 V
Drain to Gate Breakdown Voltage..................................................................................... 250 V
Gate to Source Voltage....................................................................................................
±
20 V
Drain Current (Cont.) ......................................................................................................... 2.2 A
Drain Current (Pluse.)........................................................................................................ 8.8 A
Thermal Characteristics
Characteristic
Junction to Case
Junction to Ambient
Symbol
R
θJC
R
θJA
Max.
5
50
Units
°C/W
°C/W
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics
(Ta=25°C)
Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Forward Transconductance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Time
Total Gate Charge
(Gate-Source Plus Gate-Drain)
Gate-Source Charge
Gate-Drain Charge (Miller)
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
gfs
R
DS(ON)
C
iss
C
rss
C
oss
t
r
t
on
t
f
T
off
Q
g
Q
gs
Q
gd
Min.
250
2.0
-
-
0.80
-
-
-
-
-
-
-
-
-
-
-
Typ. Max.
-
-
-
4.0
-
25
-
±100
1.2
-
1.2
2.0
280
-
30
-
42
-
45
-
30
-
45
-
135
-
-
-
-
8.2
1.8
4.5
Unit
V
V
uA
uA
Ω
pF
pF
pF
nS
Spec. No. : Preliminary Data
Issued Date : 1999.11.01
Revised Date : 200011.01
Page No. : 2/5
Test Conditions
I
D
=250uA
V
DS
=4V, I
D
=250uA
V
DS
=200V
V
GS
=±20V
V
DS
=50V,I
D
=1.3A
V
GS
=10V, I
D
=1.3A
V
DS
=10V, V
GS
=0V
f=1.0MHz
V
DD
=100V, I
D
=1.0A
R
G
=24Ω, R
D
=45Ω
nC
nC
nC
I
D
=2.7A, V
DS
=200V
V
GS
=10V
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
On-Region Characteristic
7
V
GS
=10V
6
ID, Drain-Source Current (A)
5
V
GS
=6V
4
3
2
V
GS
=4V
1
V
GS
=2V
0
0
1
2
3
4
5
6
7
VDS,Drain-Source Voltage (V)
8
9
10
0.95
20
40
V
GS
=8V
BVDSS, Normalized Drain-Source
Breakdown Voltage
1.13
1.11
1.09
1.07
1.05
1.03
1.01
0.99
0.97
1.15
Spec. No. : Preliminary Data
Issued Date : 1999.11.01
Revised Date : 200011.01
Page No. : 3/5
Breakdown Voltage Variation with Temperature
60
80
Tc, Case Temperature (°C)
100
On Resistance Variation with Temperature
2.5
V
GS
=10V
RDS(on), Drain-Source On-Resistance
(ohm)
RDS(on), Drain-Source On-Resistance
(ohm)
2.3
2.1
1.9
I
D
=1.3A
1.7
1.5
1.3
1.1
0.9
25
35
45
55
65
75
85
95
Tc, Case Temperature (°C)
105
115
125
2.0
1.8
Typical On-Resistance & Drain-Current
V
GS
=6V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
1
2
3
4
5
6
7
ID, Drain-Source Current (A)
8
9
10
V
GS
=10V
Transconductance Variation with Drain Current
& Temperature
5
V
DS
=10V
GFS,Transconductance (S)
ID, Drain-source Current (A)
4
Tc=25°C
3
Tc=100°C
2
4
5
Drain Current Variation with Gate Voltage &
Temperature
V
DS
=10V
TC=100°C
3
Tc=25°C
2
1
1
0
0
1
2
3
4
5
6
ID, Drain-Source Current (A)
7
8
0
0
1
2
3
4
5
6
VGS, Gate-Source Votltage(V)
7
8
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1999.11.01
Revised Date : 200011.01
Page No. : 4/5
RDSON(Temp)
2.5
V
GS
=10V
RDS(on),Normalized Drain-Source On
Resistance (ohm)
2.0
IS, Reverse Drain Current (A)
Tc=100°C
1.5
Tc=25
°
C
1.0
10
9
Body Diode Forward Voltage Variation with
Current & Temperature
Tc=100
°
C
8
7
6
5
4
3
2
1
Tc=25
°
C
0.5
0.0
0
1
2
3
4
5
6
7
ID, Drain-Source Current (A)
8
9
10
0
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
VSD, Body Diode Forward Voltage (V)
Capacitance Characteristices
1000
Ciss
Capacitance (pF)
100
Coss
Crss
10
1
0.1
1
10
VDS, Drain-Source Voltage (V)
100
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-252 Dimension
A
C
Spec. No. : Preliminary Data
Issued Date : 1999.11.01
Revised Date : 200011.01
Page No. : 5/5
Marking :
HSMC Logo
Part Number
Date Code
Product Series
Rank
B
D
L
F
G
Ink Mark
Style : Pin 1.Gate 2.Drain 3.Source
3
H
E
K
2
I
1
J
3-Lead TO-252 Plastic Surface Mount Package
HSMC Package Code : J
*:Typical
DIM
A
B
C
D
E
F
Inches
Min.
Max.
0.0177 0.0217
0.0650 0.0768
0.0354 0.0591
0.0177 0.0236
0.2520 0.2677
0.2125 0.2283
Millimeters
Min.
Max.
0.45
0.55
1.65
1.95
0.90
1.50
0.45
0.60
6.40
6.80
5.40
5.80
DIM
G
H
I
J
K
L
Inches
Min.
Max.
0.0866 0.1102
-
*0.0906
-
0.0354
-
0.0315
0.2047 0.2165
0.0551 0.0630
Millimeters
Min.
Max.
2.20
2.80
-
*2.30
-
0.90
-
0.80
5.20
5.50
1.40
1.60
Notes :
1.Dimension and tolerance based on our Spec. dated May. 05,1996.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material :
•
Lead : 42 Alloy ; solder plating
•
Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory :
•
Head Office
(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
•
Factory 1 :
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
•
Factory 2 :
No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5977061 Fax : 886-3-5979220
HSMC Product Specification
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