SMD Type
High Voltage Transistor
PZTA96S
SOT-223
+0.2
6.50
-0.2
Transistors
Unit: mm
+0.2
3.50
-0.2
0
.1max
+0.05
0.90
-0.05
Features
PNP Silicon
+0.1
3.00
-0.1
+0.2
0.90
-0.2
+0.3
7.00
-0.3
4
1 Base
1
2
2.9
4.6
3
0.70
+0.1
-0.1
2 Collector
3 Emitter
4 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
Total Power Dissipation Up to T
A
= 25
Storage Temperature Range
Junction Temperature
Thermal Resistance from Junction to Ambient *
*
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
stg
T
J
R
èJA
Rating
-450
-450
-5
-500
1.5
-65 to +150
150
83.3
Unit
V
V
V
mA
Watts
*
Device mounted on a glass epoxy printed circuit board 1.575 in. X 1.575 in.X 0.059 in.;
Electrical Characteristics Ta = 25
Parameter
Collector–Emitter Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector–Base Cutoff Current
Emitter–Base Cutoff Current
DC Current Gain*
Saturation Voltages
* Pulse Test: Pulse Width
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
300 ìs; Duty Cycle = 2.0%.
Testconditons
I
C
= -1.0 mA, I
B
= 0
I
C
= -100 ìA,I
E
= 0
I
E
= -10ìA, I
C
= 0
V
CB
= -400 V, I
E
= 0
V
BE
= -4.0 V, I
C
= 0
I
C
= -10 mA, V
CE
=-10 V
I
C
= -20 mA, I
B
=-2.0 mA
I
C
= -20 mA, I
B
= -2.0 mA
50
Min
-450
-450
-5.0
-0.1
-0.1
150
-0.6
-1.0
V
V
Typ
Max
Unit
V
V
V
ìA
ìA
Marking
Marking
ZTA96
+0.15
1.65
-0.15
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1
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