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HN2C01FU-Y

产品描述TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN, BIP General Purpose Small Signal
产品类别分立半导体    晶体管   
文件大小234KB,共3页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
下载文档 详细参数 选型对比 全文预览

HN2C01FU-Y概述

TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN, BIP General Purpose Small Signal

HN2C01FU-Y规格参数

参数名称属性值
厂商名称Toshiba(东芝)
包装说明SMALL OUTLINE, R-PDSO-G6
针数6
Reach Compliance Codeunknown
ECCN代码EAR99
最大集电极电流 (IC)0.15 A
基于收集器的最大容量3.5 pF
集电极-发射极最大电压50 V
配置SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)120
JESD-30 代码R-PDSO-G6
JESD-609代码e0
元件数量2
端子数量6
最高工作温度125 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型NPN
功耗环境最大值0.2 W
最大功率耗散 (Abs)0.2 W
认证状态Not Qualified
表面贴装YES
端子面层TIN LEAD
端子形式GULL WING
端子位置DUAL
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)80 MHz
VCEsat-Max0.25 V
Base Number Matches1

文档预览

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HN2C01FU
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
HN2C01FU
Audio Frequency General Purpose Amplifier Applications
Small package (dual type)
High voltage and high current : V
CEO
= 50V, I
C
= 150mA (max)
High h
FE
Excellent h
FE
linearity
: h
FE
= 120 to 400
: h
FE
(I
C
= 0.1mA) / (I
C
= 2mA)
= 0.95 (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
Rating
60
50
5
150
30
200
125
−55
to 125
Unit
V
V
V
mA
mA
mW
°C
°C
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
Note:
JEDEC
JEITA
TOSHIBA
2-2J1B
Weight: 6.8 mg (typ.)
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 Common)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE (Note)
V
CE (sat)
f
T
C
ob
Test
Circuit
Test Condition
V
CB
= 60V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 6V, I
C
= 2mA
I
C
= 100mA, I
B
=10mA
V
CE
= 10V, I
C
= 1mA
V
CB
= 10V, I
E
= 0, f = 1MH
z
Min
120
80
Typ.
0.1
2
Max
0.1
0.1
400
0.25
3.5
Unit
μA
μA
V
MH
z
pF
Note: h
FE
classification
Y(Y): 120 to 240, GR(G): 200 to 400
( ) marking symbol
Marking
Equivalent Circuit
(top view)
Start of commercial production
1992-01
1
2014-03-01

HN2C01FU-Y相似产品对比

HN2C01FU-Y HN2C01FU-GR(T5L,F) HN2C01FU-Y(TE85L,F HN2C01FU-GR HN2C01FU-GR(T5LFUF
描述 TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN, BIP General Purpose Small Signal TRANS 2NPN 50V 0.15A US6 TRANS 2NPN 50V 0.15A US6 TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN, BIP General Purpose Small Signal Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
厂商名称 Toshiba(东芝) Toshiba(东芝) Toshiba(东芝) Toshiba(东芝) Toshiba(东芝)
包装说明 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code unknown unknown unknown unknown unknown
最大集电极电流 (IC) 0.15 A 0.15 A 0.15 A 0.15 A 0.15 A
基于收集器的最大容量 3.5 pF 3.5 pF 3.5 pF 3.5 pF 3.5 pF
集电极-发射极最大电压 50 V 50 V 50 V 50 V 50 V
配置 SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE) 120 200 120 200 200
JESD-30 代码 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6
元件数量 2 2 2 2 2
端子数量 6 6 6 6 6
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN NPN NPN NPN NPN
功耗环境最大值 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W
最大功率耗散 (Abs) 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W
表面贴装 YES YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 80 MHz 80 MHz 80 MHz 80 MHz 80 MHz
VCEsat-Max 0.25 V 0.25 V 0.25 V 0.25 V 0.25 V
Base Number Matches 1 1 1 1 1
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