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HN2C01FU-Y(TE85L,F

产品描述TRANS 2NPN 50V 0.15A US6
产品类别分立半导体    晶体管   
文件大小234KB,共3页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
下载文档 详细参数 选型对比 全文预览

HN2C01FU-Y(TE85L,F概述

TRANS 2NPN 50V 0.15A US6

HN2C01FU-Y(TE85L,F规格参数

参数名称属性值
是否无铅不含铅
厂商名称Toshiba(东芝)
包装说明SMALL OUTLINE, R-PDSO-G6
Reach Compliance Codeunknown
最大集电极电流 (IC)0.15 A
基于收集器的最大容量3.5 pF
集电极-发射极最大电压50 V
配置SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)120
JESD-30 代码R-PDSO-G6
元件数量2
端子数量6
最高工作温度125 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型NPN
功耗环境最大值0.2 W
最大功率耗散 (Abs)0.2 W
表面贴装YES
端子形式GULL WING
端子位置DUAL
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)80 MHz
VCEsat-Max0.25 V
Base Number Matches1

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HN2C01FU
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
HN2C01FU
Audio Frequency General Purpose Amplifier Applications
Small package (dual type)
High voltage and high current : V
CEO
= 50V, I
C
= 150mA (max)
High h
FE
Excellent h
FE
linearity
: h
FE
= 120 to 400
: h
FE
(I
C
= 0.1mA) / (I
C
= 2mA)
= 0.95 (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
Rating
60
50
5
150
30
200
125
−55
to 125
Unit
V
V
V
mA
mA
mW
°C
°C
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
Note:
JEDEC
JEITA
TOSHIBA
2-2J1B
Weight: 6.8 mg (typ.)
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 Common)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE (Note)
V
CE (sat)
f
T
C
ob
Test
Circuit
Test Condition
V
CB
= 60V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 6V, I
C
= 2mA
I
C
= 100mA, I
B
=10mA
V
CE
= 10V, I
C
= 1mA
V
CB
= 10V, I
E
= 0, f = 1MH
z
Min
120
80
Typ.
0.1
2
Max
0.1
0.1
400
0.25
3.5
Unit
μA
μA
V
MH
z
pF
Note: h
FE
classification
Y(Y): 120 to 240, GR(G): 200 to 400
( ) marking symbol
Marking
Equivalent Circuit
(top view)
Start of commercial production
1992-01
1
2014-03-01

HN2C01FU-Y(TE85L,F相似产品对比

HN2C01FU-Y(TE85L,F HN2C01FU-GR(T5L,F) HN2C01FU-GR HN2C01FU-Y HN2C01FU-GR(T5LFUF
描述 TRANS 2NPN 50V 0.15A US6 TRANS 2NPN 50V 0.15A US6 TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN, BIP General Purpose Small Signal TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN, BIP General Purpose Small Signal Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
厂商名称 Toshiba(东芝) Toshiba(东芝) Toshiba(东芝) Toshiba(东芝) Toshiba(东芝)
包装说明 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code unknown unknown unknown unknown unknown
最大集电极电流 (IC) 0.15 A 0.15 A 0.15 A 0.15 A 0.15 A
基于收集器的最大容量 3.5 pF 3.5 pF 3.5 pF 3.5 pF 3.5 pF
集电极-发射极最大电压 50 V 50 V 50 V 50 V 50 V
配置 SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE) 120 200 200 120 200
JESD-30 代码 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6
元件数量 2 2 2 2 2
端子数量 6 6 6 6 6
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
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功耗环境最大值 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W
最大功率耗散 (Abs) 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W
表面贴装 YES YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
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标称过渡频率 (fT) 80 MHz 80 MHz 80 MHz 80 MHz 80 MHz
VCEsat-Max 0.25 V 0.25 V 0.25 V 0.25 V 0.25 V
Base Number Matches 1 1 1 1 1
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