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MWT-5GG: 产品描述RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET, DIE-6; 产品类别分立半导体晶体管; 文件大小201KB，共4页; 制造商IXYS

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MWT-5GG概述

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET, DIE-6

	MWT-5GG	MWT-5SG
描述	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET, DIE-6	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET, DIE-6
零件包装代码	DIE	DIE
包装说明	UNCASED CHIP, R-XUUC-N5	UNCASED CHIP, R-XUUC-N5
针数	6	6
Reach Compliance Code	compliant	compliant
配置	SINGLE	SINGLE
最小漏源击穿电压	7 V	7 V
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
最高频带	K BAND	K BAND
JESD-30 代码	R-XUUC-N5	R-XUUC-N5
元件数量	1	1
端子数量	5	5
工作模式	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE
最高工作温度	150 °C	150 °C
封装主体材料	UNSPECIFIED	UNSPECIFIED
封装形状	RECTANGULAR	RECTANGULAR
封装形式	UNCASED CHIP	UNCASED CHIP
极性/信道类型	N-CHANNEL	N-CHANNEL
认证状态	Not Qualified	Not Qualified
表面贴装	YES	YES
端子形式	NO LEAD	NO LEAD
端子位置	UPPER	UPPER
晶体管元件材料	GALLIUM ARSENIDE	GALLIUM ARSENIDE

器件捷径: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY