®
MJD112
MJD117
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s
s
s
s
s
STMicroelectronics PREFERRED
SALESTYPES
LOW BASE-DRIVE REQUIREMENTS
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
ELECTRICAL SIMILAR TO TIP112 AND
TIP117
3
1
APPLICATIONS
s
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
DESCRIPTION
The MJD112 and MJD117 form complementary
PNP - NPN pairs.
They are manufactured using Epitaxial Base
technology for cost-effective performance.
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
R1(typ) = 7KΩ
R2(typ) = 200Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
Parameter
Collector-Emitter Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Total Dissipation at T
c
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
Value
100
100
5
2
4
0.05
20
-65 to 150
150
Unit
V
V
V
A
A
A
W
o
o
C
C
For PNP type voltage and current values are negative.
January 2003
1/6
MJD112/MJD117
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
6.25
100
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CBO
I
CEO
I
CEX
I
EBO
Parameter
Collector Cut-off
Current (I
E
= 0)
Collector Cut-off
Current (I
B
= 0)
Collector Cut-off
Current (V
BE
= -1.5V)
Emitter Cut-off Current
(I
C
= 0)
Test Conditions
V
CB
= 100 V
V
CB
= 80 V
V
CE
= 50 V
V
CE
= 80 V
V
CE
= 80 V
V
EB
= 5 V
I
C
= 30 mA
100
Min.
Typ.
Max.
0.02
0.01
0.02
0.01
0.5
2
Unit
mA
mA
mA
mA
mA
mA
V
T
c
= 125 C
o
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
∗
V
BE(sat)
∗
V
BE(on)
∗
h
FE
∗
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter On
Voltage
DC Current Gain
I
C
= 2 A
I
C
= 4 A
I
C
= 4 A
I
C
= 2 A
I
C
= 0.5 A
I
C
= 2 A
I
C
= 4 A
I
B
= 8 mA
I
B
= 40 mA
I
B
= 40 mA
V
CE
= 3 V
V
CE
= 3 V
V
CE
= 3 V
V
CE
= 3 V
500
1000
200
2
3
4
2.8
V
V
V
V
12000
∗
Pulsed: Pulse duration = 300
µs,
duty cycle
≤
2 %
For PNP types voltage and current values are negative.
Safe Operating Areas
Derating Curve
2/6
MJD112/MJD117
DC Current Gain (NPN type)
DC Current Gain (NPN type)
Collector-Emitter Saturation Voltage (NPN type)
Collector-Emitter Saturation Voltage (PNP type)
Base-Emitter Saturation Voltage (NPN type)
Base-Emitter Saturation Voltage (PNP type)
3/6
MJD112/MJD117
Base-Emitter On Voltage (NPN type)
Base-Emitter On Voltage (PNP type)
Freewheel Diode Forward Voltage (NPN types)
Freewheel Diode Forward Voltage (PNP types)
4/6
MJD112/MJD117
TO-252 (DPAK) MECHANICAL DATA
mm
MIN.
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
V2
0.60
0
o
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
0.8
1.00
8
o
0.024
0
o
TYP.
MAX.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
MIN.
0.087
0.035
0.001
0.025
0.204
0.018
0.019
0.236
0.252
0.173
0.368
0.031
0.039
0
o
inch
TYP.
MAX.
0.094
0.043
0.009
0.035
0.213
0.024
0.024
0.244
0.260
0.181
0.398
DIM.
P032P_B
5/6
DSP 与 ARM 处理器
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