TSOP12..SP1
Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
Description
The TSOP12..SP1 - series are miniaturized receivers
for infrared remote control systems. PIN diode and
preamplifier are assembled on lead frame, the epoxy
package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. TSOP12..SP1 is the
standard IR remote control receiver series, support-
ing all major transmission codes.
1
2
3
18308
Features
• Photo detector and preamplifier in one
package
• Internal filter for PCM frequency
• Improved shielding against electrical
field
disturbance
• TTL and CMOS compatibility
• Output active low
• Low power consumption
Mechanical Data
Pinning:
1 = GND, 2 = V
S
, 3 = OUT
e3
Parts Table
Part
TSOP1230SP1
TSOP1233SP1
TSOP1236SP1
TSOP1237SP1
Carrier Frequency
30 kHz
33 kHz
36 kHz
36.7 kHz
38 kHz
40 kHz
56 kHz
Special Features
• Improved immunity against ambient light
• Suitable burst length
≥
10 cycles/burst
TSOP1238SP1
TSOP1240SP1
TSOP1256SP1
Block Diagram
16832
Application Circuit
2
30 kΩ
Input
PIN
AGC
Band
Pass
Demo-
dulator
V
S
16842
3
OUT
Circuit
Transmitter
TSOPxxxx
with
TSALxxxx
R
1
= 100
Ω
V
S
C
1
=
4.7 µF
V
O
+V
S
1
Control Circuit
GND
OUT
GND
µC
GND
R
1
+ C
1
recommended to suppress power supply
disturbances.
The output voltage should not be hold continuously at
a voltage below V
O =
3.3 V by the external circuit.
Document Number 82247
Rev. 1.1, 27-Jan-05
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1
TSOP12..SP1
Vishay Semiconductors
Absolute Maximum Ratings
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Supply Voltage
Supply Current
Output Voltage
Output Current
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Soldering Temperature
(T
amb
≤
85 °C)
t
≤
10 s, > 1 mm from case
(Pin 2)
(Pin 2)
(Pin 3)
(Pin 3)
Test condition
Symbol
V
S
I
S
V
O
I
O
T
j
T
stg
T
amb
P
tot
T
sd
Value
- 0.3 to + 6.0
5
- 0.3 to + 6.0
5
100
- 25 to + 85
- 25 to + 85
50
260
VISHAY
Unit
V
mA
V
mA
°C
°C
°C
mW
°C
Electrical and Optical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Supply Current (Pin 2)
Test condition
V
S
= 5 V, E
v
= 0
V
S
= 5 V,
E
v
= 40 klx, sunlight
Supply Voltage (Pin 2)
Transmission Distance
E
v
= 0, test signal see fig.1,
IR diode TSAL6200,
I
F
= 400 mA
I
OSL
= 0.5 mA, E
e
= 0.7 mW/m
2
,
f = f
o
, test signal see fig. 1
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig.1
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig.1
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig. 1
Angle of half transmission
distance
Symbol
I
SD
I
SH
V
S
d
4.5
35
Min
0.8
Typ.
1.2
1.5
5.5
Max
1.5
Unit
mA
mA
V
m
Output Voltage Low (Pin 3)
Minimum Irradiance (30 - 40
kHz)
Minimum Irradiance (56 kHz)
V
OSL
E
e min
0.35
250
0.5
mV
mW/m
2
E
e min
0.4
0.6
mW/m
2
Maximum Irradiance
Directivity
E
e max
ϕ
1/2
30
± 45
W/m
2
deg
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Document Number 82247
Rev. 1.1, 27-Jan-05
VISHAY
TSOP12..SP1
Vishay Semiconductors
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
E
e
Optical Test Signal
(IR diode TSAL6200, I
F
= 0.4 A, 30 pulses, f = f
0
, T = 10 ms)
T
on
,T
off
– Output Pulse Width ( ms )
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
1.0
l
= 950 nm,
optical test signal, fig.3
Toff
Ton
t
t
pi
*
T
* t
pi
w
10/fo is recommended for optimal function
V
O
V
OH
V
OL
t
d1 )
Output Signal
1)
2)
16110
7/f
0
<
t
d
<
15/f
0
t
pi
–5/f
0
<
t
po
<
t
pi
+6/f
0
t
po2 )
t
10.0
100.0 1000.010000.0
16909
E
e
– Irradiance ( mW/m
2
)
Figure 1. Output Function
Figure 4. Output Pulse Diagram
1.0
t
po
– Output Pulse Width ( ms )
1.2
E
e min
/ E
e
– Rel. Responsivity
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
1.0
Output Pulse
1.0
0.8
0.6
0.4
0.2
0.0
0.7
f = f
0
"5%
Df
( 3dB ) = f
0
/10
0.9
1.1
1.3
Input Burst Duration
l
= 950 nm,
optical test signal, fig.1
10.0
100.0 1000.010000.0
16925
16908
E
e
– Irradiance ( mW/m
2
)
f/f
0
– Relative Frequency
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Figure 5. Frequency Dependence of Responsivity
E
e
Optical Test Signal
E
e min
– Threshold Irradiance ( mW/m
2
)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.01
Ambient,
l
= 950 nm
Correlation with ambient light sources:
10W/m
2
^1.4klx
(Std.illum.A,T=2855K)
10W/m
2
^8.2klx
(Daylight,T=5900K)
600
ms
T = 60 ms
Output Signal,
( see Fig.4 )
600
ms
t
94 8134
V
O
V
OH
V
OL
T
on
T
off
t
16911
0.10
1.00
10.00
(W/m
2
)
100.00
E – Ambient DC Irradiance
Figure 3. Output Function
Figure 6. Sensitivity in Bright Ambient
Document Number 82247
Rev. 1.1, 27-Jan-05
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TSOP12..SP1
Vishay Semiconductors
VISHAY
E
e min
– Threshold Irradiance ( mW/m
2
)
E
e min
– Threshold Irradiance ( mW/m
2
)
2.0
f = f
o
f = 10 kHz
1.0
0.6
0.5
0.4
0.3
0.2
0.1
0.0
–30 –15 0
15 30 45 60 75
T
amb
– Ambient Temperature ( C )
Sensitivity in dark ambient
1.5
f = 1 kHz
0.5
f = 100 Hz
0.0
0.1
1.0
10.0
100.0
1000.0
DV
sRMS
– AC Voltage on DC Supply Voltage (mV)
90
16912
16918
Figure 7. Sensitivity vs. Supply Voltage Disturbances
Figure 10. Sensitivity vs. Ambient Temperature
E
e min
– Threshold Irradiance ( mW/m
2
)
2.0
f(E) = f
0
1.6
1.2
0.8
0.4
0.0
0.0
0.4
0.8
1.2
1.6
2.0
E – Field Strength of Disturbance ( kV/m )
S (
l
)
rel
– Relative Spectral Sensitivity
1.2
1.0
0.8
0.6
0.4
0.2
0
750
850
950
1050
1150
94 8147
94 8408
l
– Wavelength ( nm )
Figure 8. Sensitivity vs. Electric Field Disturbances
Figure 11. Relative Spectral Sensitivity vs. Wavelength
0.8
0.7
Max. Envelope Duty Cycle
0°
10°
20°
30°
0.6
40°
0.5
0.4
0.3
0.2
0.1
0.0
0
20
40
60
80
100
120
95 11340p2
1.0
0.9
0.8
f = 38 kHz, E
e
= 2
mW/m
2
0.7
50°
60°
70°
80°
0.6
0.4 0.2
0
0.2
0.4 0.6
d
rel
-
Relative Transmission Distance
16913
Burst Length ( number of cycles / burst )
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
Figure 12. Horizontal Directivity
ϕ
x
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Document Number 82247
Rev. 1.1, 27-Jan-05
VISHAY
TSOP12..SP1
Vishay Semiconductors
0°
10°
20°
30°
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6 0.4 0.2
0
0.2
0.4 0.6
d
rel
-
Relative Transmission Distance
95 11339p2
Figure 13. Vertical Directivity
ϕ
y
Document Number 82247
Rev. 1.1, 27-Jan-05
www.vishay.com
5
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