INFRA-RED
1.
2.
2.1
2.2
Item No.: 131244
This specification applies to GaAs / GaAs LED Chips with GaAlAs window - layer
Structure
Mesa structure
Electrodes
p-side (anode)
n-side (cathode)
Au alloy
Au alloy
3.
Outlines (dimensions in microns)
p-Electrode
p-GaAlAs
365
120
280
typ.
p-Epitaxy GaAs
n-Epitaxy GaAs
n-Substrate GaAs
365
n-Electrode
4.
Electrical and optical characteristics (T=25°C)
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
min
typ
1,25
max
1,45
10
Unit
V
A
mW
I
F
= 20 mA
I
R
= 5 V
I
F
= 20 mA
output Power *
Φ
e
I
F
= 50 mA
Switching time
t
r
, t
f
I
F
= 20 mA
Peak wavelength
I
F
= 20 mA
λ
P
Power measurement at OSA on gold plate
5.
Packing
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6.
Labeling
Type
Lot No.
Φ
e
typ
min
max
3,0
7,5
500
950
ns
nm
Quantity
© 2004
OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 contact@osa-opto.com
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