Datasheet> 器件分类 > 分立半导体> 晶体管> RN1107MFV(TL3PAV)

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RN1107MFV(TL3PAV): 产品描述Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon; 产品类别分立半导体晶体管; 文件大小378KB，共6页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN1107MFV(TL3PAV)概述

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

RN1107MFV(TL3PAV)规格参数

参数名称	属性值
包装说明	SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code	unknown
其他特性	BUILT IN BIAS RESISTANCE RATIO IS 4.7
最大集电极电流 (IC)	0.1 A
集电极-发射极最大电压	50 V
配置	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	80
JESD-30 代码	R-PDSO-F3
元件数量	1
端子数量	3
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	NPN
表面贴装	YES
端子形式	FLAT
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

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RN1107MFV~RN1109MFV

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT Process)

(Bias Resistor built-in Transistor)

RN1107MFV, RN1108MFV, RN1109MFV

0.22 ± 0.05

Unit: mm

Ultra-small package, suited to very high density mounting

0.8 ± 0.05

Incorporating a bias resistor into the transistor reduces the number of

parts, so enabling the manufacture of ever more compact equipment and

lowering assembly cost.

A wide range of resistor values is available for use in various circuits.

Complementary to the RN2107MFV to RN2109MFV

1.2 ± 0.05

0.4

0.13 ± 0.05

Equivalent Circuit and Bias Resistor Values

0.5 ± 0.05

Type No.

RN1107MFV

RN1108MFV

RN1109MFV

R1 (kΩ)

R2 (kΩ)

1. BASE

VESM

2. EMITTER

3. COLLECTOR

Absolute Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN1107MFV

RN1109MFV

RN1107MFV

to RN1109MFV

RN1107MFV

RN1108MFV

RN1109MFV

(Note 1)

stg

EBO

Symbol

CBO

CEO

Rating

100

150

−55

to 150

JEDEC

―

JEITA

―

TOSHIBA

2-1L1A

Weight: 1.5 mg (typ.)

Unit

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Note 1: Mounted on an FR4 board (25.4 mm

25.4 mm

1.6 mmt)

Pad Dimension（Reference）

0.5

0.45

Unit：mm

1.15

0.4

0.45

0.4

Start of commercial production

2005-02

2014-03-01

0.32 ± 0.05

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

1.2 ± 0.05

0.80 ± 0.05

RN1107MFV(TL3PAV)相似产品对比

	RN1107MFV(TL3PAV)	RN1108MFV(TPL3)	RN1108MFV(TL3MAA)	RN1109MFV(TL3PAV)
描述	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon	trans prebias npn 150mw vesm	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Reach Compliance Code	unknown	unknow	unknown	unknown
Base Number Matches	1	1	1	1
包装说明	SMALL OUTLINE, R-PDSO-F3	-	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3
其他特性	BUILT IN BIAS RESISTANCE RATIO IS 4.7	-	BUILT IN BIAS RESISTANCE RATIO IS 2.14	BUILT IN BIAS RESISTANCE RATIO IS 0.47
最大集电极电流 (IC)	0.1 A	-	0.1 A	0.1 A
集电极-发射极最大电压	50 V	-	50 V	50 V
配置	SINGLE WITH BUILT-IN RESISTOR	-	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	80	-	80	70
JESD-30 代码	R-PDSO-F3	-	R-PDSO-F3	R-PDSO-F3
元件数量	1	-	1	1
端子数量	3	-	3	3
封装主体材料	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	NPN	-	NPN	NPN
表面贴装	YES	-	YES	YES
端子形式	FLAT	-	FLAT	FLAT
端子位置	DUAL	-	DUAL	DUAL
晶体管应用	SWITCHING	-	SWITCHING	SWITCHING
晶体管元件材料	SILICON	-	SILICON	SILICON

RN1107MFV(TL3PAV)

RN1107MFV(TL3PAV)概述

RN1107MFV(TL3PAV)规格参数

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RN1107MFV(TL3PAV)相似产品对比

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