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RN1108MFV(TL3MAA)

产品描述Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
产品类别分立半导体    晶体管   
文件大小378KB,共6页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
下载文档 详细参数 选型对比 全文预览

RN1108MFV(TL3MAA)概述

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

RN1108MFV(TL3MAA)规格参数

参数名称属性值
包装说明SMALL OUTLINE, R-PDSO-F3
Reach Compliance Codeunknown
其他特性BUILT IN BIAS RESISTANCE RATIO IS 2.14
最大集电极电流 (IC)0.1 A
集电极-发射极最大电压50 V
配置SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)80
JESD-30 代码R-PDSO-F3
元件数量1
端子数量3
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型NPN
表面贴装YES
端子形式FLAT
端子位置DUAL
晶体管应用SWITCHING
晶体管元件材料SILICON
Base Number Matches1

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RN1107MFV~RN1109MFV
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
(Bias Resistor built-in Transistor)
RN1107MFV, RN1108MFV, RN1109MFV
0.22 ± 0.05
Unit: mm
Ultra-small package, suited to very high density mounting
0.8 ± 0.05
1
Incorporating a bias resistor into the transistor reduces the number of
parts, so enabling the manufacture of ever more compact equipment and
lowering assembly cost.
A wide range of resistor values is available for use in various circuits.
Complementary to the RN2107MFV to RN2109MFV
1.2 ± 0.05
0.4
0.4
1
3
2
0.13 ± 0.05
Equivalent Circuit and Bias Resistor Values
0.5 ± 0.05
Type No.
RN1107MFV
RN1108MFV
RN1109MFV
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
1. BASE
VESM
2. EMITTER
3. COLLECTOR
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1107MFV
to
RN1109MFV
RN1107MFV
to RN1109MFV
RN1107MFV
RN1108MFV
RN1109MFV
I
C
P
C
(Note 1)
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
50
50
6
7
15
100
150
150
−55
to 150
JEDEC
JEITA
TOSHIBA
2-1L1A
Weight: 1.5 mg (typ.)
Unit
V
V
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.4 mm
×
25.4 mm
×
1.6 mmt)
Pad Dimension(Reference)
0.5
0.45
Unit:mm
1.15
0.4
0.45
0.4
0.4
Start of commercial production
2005-02
1
2014-03-01
0.32 ± 0.05
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
1.2 ± 0.05
0.80 ± 0.05

RN1108MFV(TL3MAA)相似产品对比

RN1108MFV(TL3MAA) RN1108MFV(TPL3) RN1109MFV(TL3PAV) RN1107MFV(TL3PAV)
描述 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon trans prebias npn 150mw vesm Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Reach Compliance Code unknown unknow unknown unknown
Base Number Matches 1 1 1 1
包装说明 SMALL OUTLINE, R-PDSO-F3 - SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3
其他特性 BUILT IN BIAS RESISTANCE RATIO IS 2.14 - BUILT IN BIAS RESISTANCE RATIO IS 0.47 BUILT IN BIAS RESISTANCE RATIO IS 4.7
最大集电极电流 (IC) 0.1 A - 0.1 A 0.1 A
集电极-发射极最大电压 50 V - 50 V 50 V
配置 SINGLE WITH BUILT-IN RESISTOR - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 80 - 70 80
JESD-30 代码 R-PDSO-F3 - R-PDSO-F3 R-PDSO-F3
元件数量 1 - 1 1
端子数量 3 - 3 3
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR - RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN - NPN NPN
表面贴装 YES - YES YES
端子形式 FLAT - FLAT FLAT
端子位置 DUAL - DUAL DUAL
晶体管应用 SWITCHING - SWITCHING SWITCHING
晶体管元件材料 SILICON - SILICON SILICON
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