Datasheet> 器件分类 > 分立半导体> 晶体管> RN1503(T5LNHE,F)

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RN1503(T5LNHE,F): 产品描述Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon; 产品类别分立半导体晶体管; 文件大小464KB，共7页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN1503(T5LNHE,F)概述

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

RN1503(T5LNHE,F)规格参数

参数名称	属性值
包装说明	SMALL OUTLINE, R-PDSO-G5
Reach Compliance Code	unknown
其他特性	BUILT IN BIAS RESISTANCE RATIO IS 1
最大集电极电流 (IC)	0.1 A
集电极-发射极最大电压	50 V
配置	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	70
JESD-30 代码	R-PDSO-G5
元件数量	2
端子数量	5
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	NPN
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	250 MHz
Base Number Matches	1

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RN1501∼RN1506

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT Process)

RN1501, RN1502, RN1503

RN1504, RN1505, RN1506

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Including two devices in SMV

(super mini type with 5 leads)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN2501 to RN2506

Unit: mm

Equivalent Circuit and Bias Resister Values

Type No.

RN1501

RN1502

RN1503

RN1504

RN1505

RN1506

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

JEDEC

―

JEITA

―

TOSHIBA

2-3L1A

Weight: 6.8mg (typ.)

Equivalent Circuit

(Top View)

Absolute Maximum Ratings

(Ta = 25°C) (Q1, Q2 Common)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN1501 to 1506

RN1501 to 1504

RN1505, 1506

Symbol

CBO

CEO

EBO

stg

Rating

100

300

150

−55

to 150

Unit

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* Total rating

Start of commercial production

1988-10

2014-03-01

RN1503(T5LNHE,F)相似产品对比

	RN1503(T5LNHE,F)	RN1504(TE85L,F)	RN1506(TE85L,F)	RN1505(TE85L,F)	RN1501(TE85L,F)	RN1502(TE85L,F)	RN1503(TE85L,F)	RN1505(T5L,PP,F)
描述	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon	tran dual CE npn smv 50v 100a	TRANS 2NPN PREBIAS 0.3W SMV	TRANS 2NPN PREBIAS 0.3W SMV	TRANS 2NPN PREBIAS 0.3W SMV	TRANS 2NPN PREBIAS 0.3W SMV	TRANS 2NPN PREBIAS 0.3W SMV	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Reach Compliance Code	unknown	unknow	unknown	unknown	unknown	unknown	unknown	unknown
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
最小直流电流增益 (hFE)	70	80	80	80	30	50	70	80
元件数量	2	2	2	2	2	2	2	2
极性/信道类型	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
是否Rohs认证	-	符合	符合	符合	符合	符合	符合	-
最大功率耗散 (Abs)	-	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W	-
厂商名称	-	-	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	-	Toshiba(东芝)	Toshiba(东芝)

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