Datasheet> 器件分类 > 分立半导体> 晶体管> RN1501(TE85L,F)

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RN1501(TE85L,F): 产品描述TRANS 2NPN PREBIAS 0.3W SMV; 产品类别分立半导体晶体管; 文件大小464KB，共7页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/; 标准

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RN1501(TE85L,F)概述

TRANS 2NPN PREBIAS 0.3W SMV

RN1501(TE85L,F)规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Toshiba(东芝)
Reach Compliance Code	unknown
ECCN代码	EAR99
最大集电极电流 (IC)	0.1 A
最小直流电流增益 (hFE)	30
元件数量	2
极性/信道类型	NPN
最大功率耗散 (Abs)	0.3 W
表面贴装	YES
晶体管元件材料	SILICON

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RN1501∼RN1506

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT Process)

RN1501, RN1502, RN1503

RN1504, RN1505, RN1506

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Including two devices in SMV

(super mini type with 5 leads)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN2501 to RN2506

Unit: mm

Equivalent Circuit and Bias Resister Values

Type No.

RN1501

RN1502

RN1503

RN1504

RN1505

RN1506

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

JEDEC

―

JEITA

―

TOSHIBA

2-3L1A

Weight: 6.8mg (typ.)

Equivalent Circuit

(Top View)

Absolute Maximum Ratings

(Ta = 25°C) (Q1, Q2 Common)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN1501 to 1506

RN1501 to 1504

RN1505, 1506

Symbol

CBO

CEO

EBO

stg

Rating

100

300

150

−55

to 150

Unit

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* Total rating

Start of commercial production

1988-10

2014-03-01

RN1501(TE85L,F)相似产品对比

	RN1501(TE85L,F)	RN1504(TE85L,F)	RN1506(TE85L,F)	RN1505(TE85L,F)	RN1502(TE85L,F)	RN1503(TE85L,F)	RN1503(T5LNHE,F)	RN1505(T5L,PP,F)
描述	TRANS 2NPN PREBIAS 0.3W SMV	tran dual CE npn smv 50v 100a	TRANS 2NPN PREBIAS 0.3W SMV	TRANS 2NPN PREBIAS 0.3W SMV	TRANS 2NPN PREBIAS 0.3W SMV	TRANS 2NPN PREBIAS 0.3W SMV	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Reach Compliance Code	unknown	unknow	unknown	unknown	unknown	unknown	unknown	unknown
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
最小直流电流增益 (hFE)	30	80	80	80	50	70	70	80
元件数量	2	2	2	2	2	2	2	2
极性/信道类型	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
是否Rohs认证	符合	符合	符合	符合	符合	符合	-	-
厂商名称	Toshiba(东芝)	-	Toshiba(东芝)	Toshiba(东芝)	-	Toshiba(东芝)	-	Toshiba(东芝)
最大功率耗散 (Abs)	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W	-	-

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器件捷径: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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