电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

RS3JB

产品描述3 A, 600 V, SILICON, RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小54KB,共2页
制造商BILIN
官网地址http://www.galaxycn.com/
下载文档 选型对比 全文预览

RS3JB概述

3 A, 600 V, SILICON, RECTIFIER DIODE

文档预览

下载PDF文档
BL
FEATURES
GALAXY ELECTRICAL
RS3AB---RS3MB
REVERSE VOLTAGE: 50 --- 1000 V
CURRENT:
3.0
A
SURFACE MOUNT RECTIFIER
Plastic package has
underwriters laborator
flammability classification
94V-0
For surface mounted applications
Low profile package
Built-in strain relief,ideal for automated placement
Glass passivated chip junction
High temperature soldering:
111
250
o
C/10 seconds at terminals
111
DO - 214AA(SMB)
MECHANICAL DATA
Case:JEDEC DO-214AA,molded plastic over
1111passivated
chip
Terminals:Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: color band denotes cathode end
Weight: 0.003 ounces, 0.093 gram
½½½½(½½)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified
RS3AB RS3BB RS3DB RS3GB RS3JB RS3KB RS3MB UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forword rectified current at
c
T
L
=90
O
C
Peak forward surge current @ T
L
= 110°C 8.3ms
c
single half-sine-wave superimposed on rated
c
load
Maximum instantaneous forward voltage at
3.0A
Maximum DC reverse current
at rated DC blockjing voltage
@T
A
=25
o
C
@T
A
=125
o
C
V
RRM
V
RWS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
JA
T
J
T
STG
50
35
50
100
70
100
200
140
200
400
280
400
3.0
100.0
1.30
5.0
200.0
600
420
600
800
560
800
1000
700
100
V
V
V
A
A
V
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resitance (NOTE 3)
Operating junction and storage temperature range
150
32
40.0
250
500
ns
pF
o
C/W
o
-55--------+150
C
NOTE: 1.Reverse recovery time test conditions:I
F
=0.5A,I
R
=1.0A,I
rr
=0.25A
2. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts
3. Thermal resistance from junction to ambient and junction to lead P.C.B.mounted on 0.2''X0.2''(5.0X5.0mm
2
) copper pad areas
www.galaxycn.com
Document Number 0280034
BL
GALAXY ELECTRICAL
1.

RS3JB相似产品对比

RS3JB RS3AB RS3DB RS3GB
描述 3 A, 600 V, SILICON, RECTIFIER DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1041  2141  2126  1178  1985  16  24  15  10  1 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved