BL
FEATURES
GALAXY ELECTRICAL
RS3AB---RS3MB
REVERSE VOLTAGE: 50 --- 1000 V
CURRENT:
3.0
A
SURFACE MOUNT RECTIFIER
Plastic package has
underwriters laborator
flammability classification
94V-0
For surface mounted applications
Low profile package
Built-in strain relief,ideal for automated placement
Glass passivated chip junction
High temperature soldering:
111
250
o
C/10 seconds at terminals
111
DO - 214AA(SMB)
MECHANICAL DATA
Case:JEDEC DO-214AA,molded plastic over
1111passivated
chip
Terminals:Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: color band denotes cathode end
Weight: 0.003 ounces, 0.093 gram
½½½½（½½）
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified
RS3AB RS3BB RS3DB RS3GB RS3JB RS3KB RS3MB UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forword rectified current at
c
T
L
=90
O
C
Peak forward surge current @ T
L
= 110°C 8.3ms
c
single half-sine-wave superimposed on rated
c
load
Maximum instantaneous forward voltage at
3.0A
Maximum DC reverse current
at rated DC blockjing voltage
@T
A
=25
o
C
@T
A
=125
o
C
V
RRM
V
RWS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
JA
T
J
T
STG
50
35
50
100
70
100
200
140
200
400
280
400
3.0
100.0
1.30
5.0
200.0
600
420
600
800
560
800
1000
700
100
V
V
V
A
A
V
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resitance (NOTE 3)
Operating junction and storage temperature range
150
32
40.0
250
500
ns
pF
o
C/W
o
-55--------+150
C
NOTE: 1.Reverse recovery time test conditions:I
F
=0.5A,I
R
=1.0A,I
rr
=0.25A
2. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts
3. Thermal resistance from junction to ambient and junction to lead P.C.B.mounted on 0.2''X0.2''(5.0X5.0mm
2
) copper pad areas
www.galaxycn.com
Document Number 0280034
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- FORWARD DERATING CURVE
PEAK FORWARD SURGE
CURRENT,AMPERES
AVERAGE FORWARD
CURRENT,AMPERES
100
RS3AB - - - RS3MB
FIG.2 PEAK FORWARD SURGE CURRENT
T
L
=100 C
8.3ms Single Half Sine-Wave
(JEDEC Method)
O
3.0
80
Resistive or inductive Load
60
2.0
40
1.0
P.C.B.MOUNTED ON
0.27''X0.27''(7.0X7.0mm)
COPPERPAND AREAS
20
0
50
60 70 80 90 100 110 120 130 140 150 160
0
1
10
1 00
LEAD TEMPERATURE
NUMBER OF CYCLES AT 60Hz
FIG.3 -- TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD
CURRENT,AMPERES
20
10
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE
CURRENT,MICROAMPERES
100
0
TJ=125 C
10
1
T
J
=25 C
O
0.1
Puise Width=300 S
1%DUTY CYCLE
1
TJ=25 C
0
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.1
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,
JUNCTION CAPACITANCE,
P
F
FIG.5-TYPICAL JUNCTION CAPACITANCE
100
60
40
30
T
J
=25 C
f=1.0MHZ
Vsig=50mVp-p
0
20
10
.1
1
4
1000
REVERSE VOLTAGE,VOLTS
www.galaxycn.com
Document Number 0280034
BL
GALAXY ELECTRICAL
2.
NXP MCU
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