PD-93788B
IRHF57230
RADIATION HARDENED
POWER MOSFET
THRU-HOLE TO-205AF (TO-39)
Product Summary
Part Number Radiation Level
IRHF57230
IRHF53230
IRHF54230
IRHF58230
100 kRads(Si)
300 kRads(Si)
600 kRads(Si)
1000 kRads(Si)
200V, N-CHANNEL
R5
TECHNOLOGY
R
DS(on)
0.22
0.22
0.22
0.275
I
D
7.3A
7.3A
7.3A
7.3A
TO-39
Description
IR HiRel R5 technology provides high performance power
MOSFETs for space applications. These devices have been
characterized for Single Event Effects (SEE) with useful
performance up to an LET of 80 (MeV/(mg/cm
2
)). The
combination of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC to DC
converters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching and temperature stability of electrical
parameters.
Features
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Hermetically Sealed
ESD Rating: Class 1A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Symbol
I
D1
@ V
GS
= 12V, T
C
= 25°C
I
DM
@ T
C
= 25°C
P
D
@ T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Pre-Irradiation
Parameter
Value
7.3
4.5
29
25
0.2
± 20
110
7.3
2.5
7.0
-55 to + 150
300 (0.063 in. /1.6 mm from case for 10s)
0.98 (Typical)
g
W
W/°C
V
mJ
A
mJ
V/ns
°C
A
Units
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
I
D2
@ V
GS
= 12V, T
C
= 100°C Continuous Drain Current
For Footnotes, refer to the page 2.
1
International Rectifier HiRel Products, Inc.
2018-12-04
IRHF57230
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
BV
DSS
BV
DSS
/T
J
R
DS(on)
V
GS(th)
Gfs
I
DSS
I
GSS
Q
G
Q
GS
Q
GD
t
d(on)
tr
t
d(off)
t
f
Ls +L
D
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
200
–––
–––
2.0
7.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.25
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.0
1030
187
18
–––
–––
0.22
4.0
–––
10
25
100
-100
50
7.4
20
25
100
35
30
–––
–––
–––
–––
V
V/°C
V
S
µA
nA
nC
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 12V, I
D2
= 4.5A
V
DS
= V
GS
, I
D
= 1.0mA
V
DS
= 15V, I
D2
= 4.5A
V
DS
= 160V, V
GS
= 0V
V
DS
= 160V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
V
GS
= -20V
I
D1
= 7.3A
V
DS
= 100V
V
GS
= 12V
V
DD
= 100V
I
D1
= 7.3A
R
G
= 7.5
V
GS
= 12V
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm/ 0.25
in from package) with Source wire
internally bonded from Source pin to Drain
pin
ns
nH
V
GS
= 0V
pF
V
DS
= 25V
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.3
29
1.5
262
1.81
A
V
ns
µC
Test Conditions
T
J
= 25°C,I
S
= 7.3A, V
GS
= 0V
T
J
= 25°C, I
F
= 7.3A, V
DD
≤
25V
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Thermal Resistance
Symbol
R
JC
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient (Typical Socket Mount)
Min.
–––
–––
Typ.
–––
–––
Max.
5.0
175
Units
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
DD
= 50V, starting T
J
= 25°C, L = 4.0mH, Peak I
L
= 7.3A, V
GS
= 12V
V
I
SD
7.3A, di/dt
320A/µs, V
DD
200V, T
J
150°C
Pulse width
300 µs; Duty Cycle
2%
Total Dose Irradiation with V
GS
Bias. 12 volt V
GS
applied and V
DS
= 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with V
DS
Bias. 160volt V
DS
applied and V
GS
= 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
International Rectifier HiRel Products, Inc.
2018-12-04
IRHF57230
Radiation Characteristics
Pre-Irradiation
IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Symbol
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-39)
Diode Forward Voltage
Up to 600 kRads (Si)
1
Min.
200
2.0
–––
–––
–––
–––
–––
–––
Max.
–––
4.0
100
-100
10
0.204
0.22
1.5
1000 kRads (Si)
2
Min.
200
1.5
–––
–––
–––
–––
–––
–––
Max.
–––
4.0
100
-100
25
0.255
0.275
1.5
V
V
nA
nA
µA
V
V
GS
= 0V, I
D
= 1.0mA
V
DS
= V
GS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 160V, V
GS
= 0V
V
GS
= 12V, I
D2
= 4.5A
V
GS
= 12V, I
D2
= 4.5A
V
GS
= 0V, I
S
= 7.3A
Units
Test Conditions
1. Part numbers IRHF57230, IRHF53230 and IRHF54230
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
Ion
LET
(MeV/(mg/cm
2
))
Br
I
Au
36.7
59.8
82.3
Energy
(MeV)
309
341
350
Range
(µm)
39.5
32.5
28.4
@ VGS =
0V
200
200
50
@ VGS =
-5V
200
100
35
VDS (V)
@ VGS =
-10V
150
40
25
@ VGS =
-15V
100
35
–––
@ VGS =
-20V
50
30
–––
Fig a.
Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2.
3
International Rectifier HiRel Products, Inc.
2018-12-04
IRHF57230
Pre-Irradiation
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
4
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
International Rectifier HiRel Products, Inc.
2018-12-04
IRHF57230
Pre-Irradiation
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Maximum Avalanche Energy
Vs. Drain Current
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
International Rectifier HiRel Products, Inc.
2018-12-04
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