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Datasheet> 器件分类 > 模拟混合信号IC> 消费电路> ISD33180PD

ISD33180PD: 产品描述Speech Synthesizer With RCDG, 188.5s, CMOS, PDIP28; 产品类别模拟混合信号IC 消费电路; 文件大小1MB，共30页; 制造商Nuvoton(新唐科技); 官网地址http://www.nuvoton.com.cn/hq/

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ISD33180PD概述

Speech Synthesizer With RCDG, 188.5s, CMOS, PDIP28

ISD33180PD规格参数

参数名称	属性值
是否Rohs认证	不符合
包装说明	DIP, DIP28,.6
Reach Compliance Code	unknown
商用集成电路类型	SPEECH SYNTHESIZER WITH RCDG
JESD-30 代码	R-PDIP-T28
JESD-609代码	e0
端子数量	28
封装主体材料	PLASTIC/EPOXY
封装代码	DIP
封装等效代码	DIP28,.6
封装形状	RECTANGULAR
封装形式	IN-LINE
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	3 V
认证状态	Not Qualified
最长读取时间	188.5 s
最大压摆率	40 mA
表面贴装	NO
技术	CMOS
端子面层	Tin/Lead (Sn/Pb)
端子形式	THROUGH-HOLE
端子节距	2.54 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
Base Number Matches	1

ISD33180PD相似产品对比

	ISD33180PD	ISD33120PD	ISD33120E	ISD33120ED	ISD33180PI	ISD33180SD	ISD33150ED	ISD33150EI	ISD33150E	ISD33150SD
描述	Speech Synthesizer With RCDG, 188.5s, CMOS, PDIP28	Speech Synthesizer With RCDG, 125.7s, CMOS, PDIP28	Speech Synthesizer With RCDG, 124.4s, CMOS, PDSO28	Speech Synthesizer With RCDG, 125.7s, CMOS, PDSO28	Speech Synthesizer With RCDG, 188.5s, CMOS, PDIP28	Speech Synthesizer With RCDG, 188.5s, CMOS, PDSO28	Speech Synthesizer With RCDG, 157.1s, CMOS, PDSO28	Speech Synthesizer With RCDG, 157.1s, CMOS, PDSO28	Speech Synthesizer With RCDG, 155.5s, CMOS, PDSO28	Speech Synthesizer With RCDG, 157.1s, CMOS, PDSO28
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
包装说明	DIP, DIP28,.6	DIP, DIP28,.6	TSSOP, TSSOP28,.53,22	TSSOP, TSSOP28,.53,22	DIP, DIP28,.6	SOP, SOP28,.4	TSSOP, TSSOP28,.53,22	TSSOP, TSSOP28,.53,22	TSSOP, TSSOP28,.53,22	SOP, SOP28,.4
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
商用集成电路类型	SPEECH SYNTHESIZER WITH RCDG	SPEECH SYNTHESIZER WITH RCDG	SPEECH SYNTHESIZER WITH RCDG	SPEECH SYNTHESIZER WITH RCDG	SPEECH SYNTHESIZER WITH RCDG	SPEECH SYNTHESIZER WITH RCDG	SPEECH SYNTHESIZER WITH RCDG	SPEECH SYNTHESIZER WITH RCDG	SPEECH SYNTHESIZER WITH RCDG	SPEECH SYNTHESIZER WITH RCDG
JESD-30 代码	R-PDIP-T28	R-PDIP-T28	R-PDSO-G28	R-PDSO-G28	R-PDIP-T28	R-PDSO-G28	R-PDSO-G28	R-PDSO-G28	R-PDSO-G28	R-PDSO-G28
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0	e0	e0
端子数量	28	28	28	28	28	28	28	28	28	28
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	DIP	DIP	TSSOP	TSSOP	DIP	SOP	TSSOP	TSSOP	TSSOP	SOP
封装等效代码	DIP28,.6	DIP28,.6	TSSOP28,.53,22	TSSOP28,.53,22	DIP28,.6	SOP28,.4	TSSOP28,.53,22	TSSOP28,.53,22	TSSOP28,.53,22	SOP28,.4
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
电源	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最长读取时间	188.5 s	125.7 s	124.4 s	125.7 s	188.5 s	188.5 s	157.1 s	157.1 s	155.5 s	157.1 s
最大压摆率	40 mA	40 mA	40 mA	40 mA	40 mA	40 mA	40 mA	40 mA	40 mA	40 mA
表面贴装	NO	NO	YES	YES	NO	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	THROUGH-HOLE	THROUGH-HOLE	GULL WING	GULL WING	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子节距	2.54 mm	2.54 mm	0.55 mm	0.55 mm	2.54 mm	1.27 mm	0.55 mm	0.55 mm	0.55 mm	1.27 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	1	1	1	1	1	1	-	-	-	-

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