Datasheet> 器件分类 > 分立半导体> 晶体管> RN2901TE85L

文档预览

RN2901TE85L: 产品描述TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal; 产品类别分立半导体晶体管; 文件大小570KB，共7页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

下载文档详细参数选型对比全文预览

RN2901TE85L概述

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

RN2901TE85L规格参数

参数名称	属性值
包装说明	SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code	unknown
其他特性	BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)	0.1 A
基于收集器的最大容量	6 pF
集电极-发射极最大电压	50 V
配置	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	30
JESD-30 代码	R-PDSO-G6
元件数量	2
端子数量	6
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	PNP
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	200 MHz
VCEsat-Max	0.3 V
Base Number Matches	1

文档预览

下载PDF文档

全文
预览

RN2901~RN2906

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)

RN2901,RN2902,RN2903,RN2904,RN2905,RN2906

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit : mm

Including two devices in US6 (ultra super mini type with 6 leads)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN1901 to RN1906

Equivalent Circuit and Bias Resistor Values

Type No.

RN2901

RN2902

RN2903

RN2904

RN2905

RN2906

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

US6

―

JEDEC

―

JEITA

2-2J1A

TOSHIBA

Weight: 6.8 mg (typ.)

Absolute Maximum Ratings

(Ta = 25°C) (Q1, Q2 Common)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN2901 to 2906

RN2901 to 2904

RN2905, 2906

Symbol

CBO

CEO

EBO

stg

Rating

−50

−10

−5

−100

200

150

−55~150

Unit

°C

Equivalent Circuit

(Top View)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* : Total rating

2010-07-09

RN2901TE85L相似产品对比

	RN2901TE85L	RN2901(TE85R)	RN2901TE85R	RN2901-11	RN2901TE85N	RN2901(TE85L)
描述	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 6 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN, BIP General Purpose Small Signal
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
其他特性	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTORS	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
集电极-发射极最大电压	50 V	50 V	50 V	50 V	50 V	50 V
配置	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
JESD-30 代码	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6
元件数量	2	2	2	2	2	2
端子数量	6	6	6	6	6	6
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	PNP	PNP	PNP	PNP	PNP	PNP
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1	1
包装说明	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	-	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6
最小直流电流增益 (hFE)	30	30	30	-	30	30
最高工作温度	150 °C	150 °C	150 °C	-	150 °C	150 °C
晶体管应用	SWITCHING	SWITCHING	SWITCHING	-	SWITCHING	SWITCHING
标称过渡频率 (fT)	200 MHz	200 MHz	200 MHz	-	200 MHz	200 MHz
是否Rohs认证	-	不符合	不符合	不符合	-	不符合
ECCN代码	-	EAR99	-	EAR99	EAR99	EAR99

RN2901TE85L

RN2901TE85L概述

RN2901TE85L规格参数

文档预览

RN2901TE85L相似产品对比

推荐资源