SGA-9289(Z)

Medium Power

Discrete SiGe

Transistor

SGA-9289(Z)

MEDIUM POWER DISCRETE SiGe TRANSISTOR

RFMD Green, RoHS Compliant, Pb-Free (Z Part Number)

Package: SOT-89

Product Description

RFMD’s SGA-9289 is a high performance transistor designed for operation to

3GHz. With optimal matching at 2GHz, OIP

3

=42.5dBm, and P

1dB

=27.5dBm. This

RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor

(SiGe HBT) process. The SGA-9289 is cost-effective for applications requiring high

linearity even at moderate biasing levels. It is well suited for operation at both 5V

and 3V. The matte tin finish on the lead-free package utilizes a post annealing pro-

cess to mitigate tin whisker formation and is RoHS compliant per EU Directive

2002/95. This package is also manufactured with green molding compounds that

contain no antimony trioxide nor halogenated fire retardants.

Optimum Technology

Matching® Applied

GaAs HBT

GaAs MESFET

InGaP HBT

Gmax (dB)

25

23

21

19

17

15

13

11

9

7

5

0.9

1.1

1.3

1.5

1.7

1.9

2.1

2.3

2.5

Features

Available in RoHS Compliant and

Green Packaging

50MHz to 3000MHz Operation

42.5dBm Output IP

3

Typ. at

1.96GHz

12.0dB Gain Typ. at 1.96GHz

27.5dBm P

1dB

Typ. at 1.96GHz

2.4dB NF Typ. at 0.9GHz

Typical Gmax, OIP3, P1dB @ 5V,270mA

44

Cost-Effective

3V to 5V Operation

OIP3, P1dB (dBm)

42

40

38

36

OIP3

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

RF MEMS

Applications

Wireless Infrastructure Driver

Amplifiers

CATV Amplifiers

Wireless Data, WLL Amplifiers

AN-022 Contains Detailed Appli-

cation Circuits

Gmax

34

32

30

28

26

24

P1dB

Frequency (GHz)

Parameter

Maximum Available Gain

Power Gain

Output Power at 1dB Compression

Min.

16.2

11.0

26.0

Specification

Typ.

20.5

13.1

17.7

12.0

28.0

27.5

42.0

42.5

2.4

2.5

180

8.5

32

Max.

19.2

13.0

Unit

dB

dBm

dB

V

°C/W

V

mA

Condition

900MHz, Z

S

=Z

S

*, Z

L

=Z

L

*

1960MHz

900MHz [1], Z

S

=Z

SOPT

, Z

L

=Z

LOPT

1960MHz [2]

900MHz, Z

S

=Z

SOPT

, Z

L

=Z

LOPT

1960MHz [2]

900MHz, Z

S

=Z

SOPT

, Z

L

=Z

LOPT,

P

OUT

=+13dBm per

tone

1960MHz [2]

900MHz, Z

S

=Z

SOPT

, Z

L

=Z

LOPT

1960MHz

collector - emitter

junction - lead

collector - emitter

Output Third Order Intercept Point

40.0

Noise Figure

DC Current Gain

100

300

Breakdown Voltage

7.5

Thermal Resistance

Device Operating Voltage

5.5

Operating Current

250

280

320

Test Conditions: V

CE

=5V, I

CQ

=280mA (unless otherwise noted), T

L

=25°C.

[1] 100% Tested [2] Sample Tested

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

EDS-101498 Rev H

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

1 of 6

SGA-9289(Z)

Absolute Maximum Ratings

Parameter

Max Base Current (I

B

)

Max Device Current (I

CE

)

Max Collector-Emitter Voltage (V

CEO

)

Max Collector-Base Voltage (V

CBO

)

Max Emitter-Base Voltage (V

EBO

)

Max Junction Temp (T

J

)

Operating Temp Range (T

L

)

Max Storage Temp

Rating

10

400

7

20

4.8

+150

See Graph

+150

Unit

mA

V

°C

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may

cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical perfor-

mance or functional operation of the device under Absolute Maximum Rating condi-

tions is not implied.

RoHS status based on EUDirective2002/95/EC (at time of this document revision).

The information in this publication is believed to be accurate and reliable. However, no

responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any

infringement of patents, or other rights of third parties, resulting from its use. No

license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended appli-

cation circuitry and specifications at any time without prior notice.

*Note: Load condition1, Z

L

=50Ω.

Operation of this device beyond any one of these limits may cause permanent dam-

age. For reliable continuous operation, the device voltage and current must not

exceed the maximum operating values specified in the table on page one.

Bias Conditions should also satisfy the following expression:

I

D

V

D

<(T

J

-T

L

)/R

TH

, j-l and T

L

=T

LEAD

Typical Performance with Engineering Application Circuit

Freq

(MHz)

945

1960

2140

2440

VCE

(V)

5

ICQ

(mA)

287

292

293

287

P1dB

(dBm)

27.8

27.5

27.7

27.5

OIP3

1

(dBm)

42.0

Gain

(dB)

17.8

12.1

11.1

9.8

S11

(dB)

-19

-24

-11

-17

S22

(dB)

-11

-21

-20

NF

(dB)

2.5

2.8

3.0

ZSOPT

(Ω)

2.93 - j3.92

4.75 - j9.12

4.30 - j9.09

4.05 - j13.78

ZSOPT

(Ω)

15.81 + j1.57

10.3 - j4.87

13.4 + j2.31

11.76 - j9.2

1

P

OUT

=+13dBm per tone for V

CE

=5V, 1MHz tone spacing

Typical Performance with Engineering Application Circuit

Freq

(MHz)

945

1960

2440

VCE

(V)

3

ICQ

(mA)

312

315

P1dB

(dBm)

25.4

26.0

26.1

OIP3

2

(dBm)

38.6

39.3

38.0

Gain

(dB)

16.8

11.0

9.4

S11

(dB)

-18

-29

S22

(dB)

-9

-15

-17

NF

(dB)

2.6

2.9

3.4

ZSOPT

(Ω)

5.61 - j4.75

3.23 - j5.67

4.07 - 14.25

ZSOPT

(Ω)

6.51 + j2.58

4.95 + j1.73

11.62 - j11.83

2

P

OUT

=+10dBm

per tone for V

CE

=3V, 1MHz tone spacing

Data above represents typical performance of the application circuits notes in Application Note AN-022. Refer to the applica-

tion note for additional RF data, PCB layouts, and BOMs for each application circuit. The application note also includes biasing

instructions and other key issues to be considered. For the latest application notes please visit our site at wwww.RFMD.com or

call your local sales representative.

Maximum Recommended Operational

Dissipated Power

2.4

C

2.0

Total Dissipated Power (W)

1.6

1.2

B

Z

LOPT

0.8

0.4

0.0

-40

-10

20

50

80

110

140

Lead Tempe rature (C)

Operational Limit (Tj<130C)

Z

SOPT

E

2 of 6

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

EDS-101498 Rev H

SGA-9289(Z)

De-embedded S-Parameters (Z

S

=Z

L

=50 Ohms, V

CE

=5V, I

CQ

=270mA, 25

°

C)

Insertion Gain & Isolation

45

0

Isolation

Insertion Gain vs Temperature

25

20

-12

-24

-36

Gain, Gmax (dB)

35

25

15

5

Gain

Isolation (dB)

Gain (dB)

15

10

5

0

-5

T = -40, 25, 85°C

Gmax

-48

-60

-5

0

1

2

3

4

5

6

7

8

-10

0

1

2

3

4

5

6

7

8

Frequency (GHz)

S11 vs Frequency

1.0

0.5

Frequency (GHz)

S22 vs Frequency

1.0

2.0

0.5

2.0

5 GHz

4 GHz

3 GHz

0.2

8 GHz

5.0

0.2

5 GHz

4 GHz

3 GHz

2 GHz

8 GHz

5.0

2 GHz

1 GHz

0.0

0.2

0.5

1.0

2.0

5.0

inf

0.0

1 GHz

0.2

0.5

1.0

2.0

5.0

inf

50 MHz

S11

0.2

5.0

0.2

S22

50 MHz

5.0

0.5

2.0

0.5

2.0

1.0

Note: S-parameters are de-embedded to the device leads with Z

S

=Z

L

=50Ω. The data represents typical performace of the device.

De-embedded s-parameters can be downloaded from our website (www.sirenza.com).

700

600

500

DC-IV Curves

I

C

(mA)

400

300

200

100

0

2

4

6

8

I

b

= 0.2 - 2.0 mA , 0.2 mA steps

T=25

°

C

V

CE

(V)

EDS-101498 Rev H

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

3 of 6

SGA-9289(Z)

1

2

3

4

Function

Base

Emitter

Collector

Emitter

Description

RF input.

Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible.

RF output.

Same as pin 2.

Recommended Mounting Configuration for Optimum RF and Thermal

Performance

Ground Plane

Plated Thru

Holes

(0.020" DIA)

SOT-89

Package

Machine

Screws

Mounting and Thermal Considerations

It is very important that adequate heat sinking be provided to minimize the device junction temperature. The following items

should be implemented to maximize MTTF and RF performance.

1. Multiple solder-filled vias are required directly below the ground tab (pin 4). [CRITICAL]

2. Incorporate a large ground pad area with multiple plated-through vias around pin 4 of the device. [CRITICAL]

3. Use two point board seating to lower the thermal resistance between the PCB and mounting plate. Place machine screws as

close to the ground tab (pin 4) as possible. [RECOMMENDED]

4. Use 2 ounce copper to improve the PCB’s heat spreading capability. [RECOMMENDED]

4 of 6

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

EDS-101498 Rev H

SGA-9289(Z)

Package Drawing

Dimensions in inches (millimeters)

Refer to drawing posted at www.rfmd.com for tolerances.

.161

3

.177 .068

P2

.096

.016

.019 .118

4

1

2

.041

.059

.015

Part Symbolization

The part will be symbolized with the “P2” (“P2Z” for RoHS version) designator and a dot signifying pin 1 on the top surface of

the package. Alternate marking “SGA9289Z” or “SGA9289” on line one with Trace Code on line two.

Ordering Information

Part Number

SGA-9289

SGA-9289Z

Reel Size

13”

Devices/Reel

3000

EDS-101498 Rev H

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

5 of 6

参数名称	属性值
是否Rohs认证	符合
Reach Compliance Code	unknown
特性阻抗	50 Ω
构造	COMPONENT
增益	11 dB
JESD-609代码	e3
最大工作频率	3000 MHz
最小工作频率	50 MHz
最高工作温度	85 °C
最低工作温度	-40 °C
射频/微波设备类型	WIDE BAND MEDIUM POWER
端子面层	Matte Tin (Sn)
Base Number Matches	1

	SGA-9289Z	SGA-9289
描述	Wide Band Medium Power Amplifier, 50MHz Min, 3000MHz Max, GREEN, SOT-89, 3 PIN	Wide Band Medium Power Amplifier, 50MHz Min, 3000MHz Max, SOT-89, 3 PIN
是否Rohs认证	符合	不符合
Reach Compliance Code	unknown	unknown
特性阻抗	50 Ω	50 Ω
构造	COMPONENT	COMPONENT
增益	11 dB	11 dB
JESD-609代码	e3	e0
最大工作频率	3000 MHz	3000 MHz
最小工作频率	50 MHz	50 MHz
最高工作温度	85 °C	85 °C
最低工作温度	-40 °C	-40 °C
射频/微波设备类型	WIDE BAND MEDIUM POWER	WIDE BAND MEDIUM POWER
端子面层	Matte Tin (Sn)	Tin/Lead (Sn/Pb)
Base Number Matches	1	1

SGA-9289Z

SGA-9289Z概述

SGA-9289Z规格参数

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