RFMD Green, RoHS Compliant, Pb-Free (Z Part Number)
Package: SOT-89
Product Description
RFMD’s SGA-9289 is a high performance transistor designed for operation to
3GHz. With optimal matching at 2GHz, OIP
3
=42.5dBm, and P
1dB
=27.5dBm. This
RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor
(SiGe HBT) process. The SGA-9289 is cost-effective for applications requiring high
linearity even at moderate biasing levels. It is well suited for operation at both 5V
and 3V. The matte tin finish on the lead-free package utilizes a post annealing pro-
cess to mitigate tin whisker formation and is RoHS compliant per EU Directive
2002/95. This package is also manufactured with green molding compounds that
contain no antimony trioxide nor halogenated fire retardants.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
Gmax (dB)
25
23
21
19
17
15
13
11
9
7
5
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2.5
Features
Available in RoHS Compliant and
Green Packaging
50MHz to 3000MHz Operation
42.5dBm Output IP
3
Typ. at
1.96GHz
12.0dB Gain Typ. at 1.96GHz
27.5dBm P
1dB
Typ. at 1.96GHz
2.4dB NF Typ. at 0.9GHz
Typical Gmax, OIP3, P1dB @ 5V,270mA
44
Cost-Effective
3V to 5V Operation
OIP3, P1dB (dBm)
42
40
38
36
OIP3
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Applications
Wireless Infrastructure Driver
Amplifiers
CATV Amplifiers
Wireless Data, WLL Amplifiers
AN-022 Contains Detailed Appli-
cation Circuits
Gmax
34
32
30
28
26
24
P1dB
Frequency (GHz)
Parameter
Maximum Available Gain
Power Gain
Output Power at 1dB Compression
Min.
16.2
11.0
26.0
Specification
Typ.
20.5
13.1
17.7
12.0
28.0
27.5
42.0
42.5
2.4
2.5
180
8.5
32
Max.
19.2
13.0
Unit
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dB
dB
V
°C/W
V
mA
Condition
900MHz, Z
S
=Z
S
*, Z
L
=Z
L
*
1960MHz
900MHz [1], Z
S
=Z
SOPT
, Z
L
=Z
LOPT
1960MHz [2]
900MHz, Z
S
=Z
SOPT
, Z
L
=Z
LOPT
1960MHz [2]
900MHz, Z
S
=Z
SOPT
, Z
L
=Z
LOPT,
P
OUT
=+13dBm per
tone
1960MHz [2]
900MHz, Z
S
=Z
SOPT
, Z
L
=Z
LOPT
1960MHz
collector - emitter
junction - lead
collector - emitter
Output Third Order Intercept Point
40.0
Noise Figure
DC Current Gain
100
300
Breakdown Voltage
7.5
Thermal Resistance
Device Operating Voltage
5.5
Operating Current
250
280
320
Test Conditions: V
CE
=5V, I
CQ
=280mA (unless otherwise noted), T
L
=25°C.
[1] 100% Tested [2] Sample Tested
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
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