Datasheet> 器件分类 > 模拟混合信号IC> 放大器电路> 5962-8863002VB

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5962-8863002VB: 产品描述5962-8863002VB放大器基础信息： 5962-8863002VB是一款INSTRUMENTATION AMPLIFIER。常用的包装方式为DIP, 5962-8863002VB放大器核心信息： 5962-8863002VB的最低工作温度是-55 °C，最高工作温度是125 °C。他的最大平均偏置电流为0.015 µA而其最大的输入失调电流（IIO）则仅为0.006 µA 如何简单看一个放大器效率？看它的压摆率，5962-8863002VB的标称压摆率有4.5 V/us。其最大电压增益为1000，最小电压增益为1。而在运放闭环使用时，某个指定闭环增益（一般为 1 或者 2、 10 等）下，5962-8863002VB增益变为低频增益的 0.707 倍时的频率为0.57 MHz。 5962-8863002VB的标称供电电压为15 V，其对应的标称负供电电压为-15 V。5962-8863002VB的输入失调电压为150 µV（输入失调电压：使运算放大器输出端为0V(或接近0V)所需加于两输入端之间的补偿电压。）5962-8863002VB的宽度为：7.62 mm。 5962-8863002VB的相关尺寸： 5962-8863002VB拥有18个端子.其端子位置类型为：DUAL。端子节距为2.54 mm。 5962-8863002VB放大器其他信息：其温度等级为：MILITARY。其对应的的JESD-30代码为：R-GDIP-T18。其对应的的JESD-609代码为：e0。5962-8863002VB的封装代码是：DIP。5962-8863002VB封装的材料多为CERAMIC, GLASS-SEALED。而其封装形状为RECTANGULAR。5962-8863002VB封装引脚的形式有：IN-LINE。其端子形式有：THROUGH-HOLE。座面最大高度为5.08 mm。; 产品类别模拟混合信号IC 放大器电路; 文件大小75KB，共13页; 制造商Precision Monolithics Inc; 器件替换：5962-8863002VB替换放大器

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5962-8863002VB概述

5962-8863002VB放大器基础信息：

5962-8863002VB是一款INSTRUMENTATION AMPLIFIER。常用的包装方式为DIP,

5962-8863002VB放大器核心信息：

5962-8863002VB的最低工作温度是-55 °C，最高工作温度是125 °C。他的最大平均偏置电流为0.015 µA而其最大的输入失调电流（IIO）则仅为0.006 µA

如何简单看一个放大器效率？看它的压摆率，5962-8863002VB的标称压摆率有4.5 V/us。其最大电压增益为1000，最小电压增益为1。而在运放闭环使用时，某个指定闭环增益（一般为 1 或者 2、 10 等）下，5962-8863002VB增益变为低频增益的 0.707 倍时的频率为0.57 MHz。

5962-8863002VB的标称供电电压为15 V，其对应的标称负供电电压为-15 V。5962-8863002VB的输入失调电压为150 µV（输入失调电压：使运算放大器输出端为0V(或接近0V)所需加于两输入端之间的补偿电压。）5962-8863002VB的宽度为：7.62 mm。

5962-8863002VB的相关尺寸：

5962-8863002VB拥有18个端子.其端子位置类型为：DUAL。端子节距为2.54 mm。

5962-8863002VB放大器其他信息：

其温度等级为：MILITARY。其对应的的JESD-30代码为：R-GDIP-T18。其对应的的JESD-609代码为：e0。5962-8863002VB的封装代码是：DIP。5962-8863002VB封装的材料多为CERAMIC, GLASS-SEALED。

而其封装形状为RECTANGULAR。5962-8863002VB封装引脚的形式有：IN-LINE。其端子形式有：THROUGH-HOLE。座面最大高度为5.08 mm。

5962-8863002VB规格参数

参数名称	属性值
包装说明	DIP,
Reach Compliance Code	unknown
Is Samacsys	N
放大器类型	INSTRUMENTATION AMPLIFIER
最大平均偏置电流 (IIB)	0.015 µA
标称带宽 (3dB)	0.57 MHz
最小共模抑制比	75 dB
最大输入失调电流 (IIO)	0.006 µA
最大输入失调电压	150 µV
JESD-30 代码	R-GDIP-T18
JESD-609代码	e0
负供电电压上限	-18 V
标称负供电电压 (Vsup)	-15 V
最大非线性	0.005%
功能数量	1
端子数量	18
最高工作温度	125 °C
最低工作温度	-55 °C
封装主体材料	CERAMIC, GLASS-SEALED
封装代码	DIP
封装形状	RECTANGULAR
封装形式	IN-LINE
认证状态	Not Qualified
筛选级别	MIL-STD-883
座面最大高度	5.08 mm
标称压摆率	4.5 V/us
供电电压上限	18 V
标称供电电压 (Vsup)	15 V
表面贴装	NO
温度等级	MILITARY
端子面层	TIN LEAD
端子形式	THROUGH-HOLE
端子节距	2.54 mm
端子位置	DUAL
最大电压增益	1000
最小电压增益	1
标称电压增益	10
宽度	7.62 mm
Base Number Matches	1

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REVISIONS

LTR

DESCRIPTION

Changes to slew rate test. Changes IAW NOR 5962-R194-93.

Changes boilerplate to add one-part numbers. Add device type 03.

Add delta test limits. Redrawn.

Change to group A subgroups for TCVOOS in table I. Update boilerplate. - rrp

Add device type 01 limits to table I

. - ro

Drawing updated to reflect current requirements. - ro

DATE (YR-MO-DA)

93-08-25

97-06-03

00-10-26

02-11-22

06-05-16

APPROVED

M. A. FRYE

R. MONNIN

THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED.

REV

SHEET

REV

SHEET

REV STATUS

OF SHEETS

PMIC N/A

REV

SHEET

PREPARED BY

CHARLES E. BESORE

STANDARD

MICROCIRCUIT

DRAWING

THIS DRAWING IS AVAILABLE

FOR USE BY ALL

DEPARTMENTS

AND AGENCIES OF THE

DEPARTMENT OF DEFENSE

CHECKED BY

WILLIAM J. JOHNSON

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43218-3990

http://www.dscc.dla.mil

APPROVED BY

MICHAEL A. FRYE

MICROCIRCUIT, LINEAR, INSTRUMENTATION

AMPLIFIER, MONOLITHIC SILICON

DRAWING APPROVAL DATE

88-09-13

AMSC N/A

REVISION LEVEL

SIZE

SHEET

CAGE CODE

67268

1 OF

5962-88630

DSCC FORM 2233

APR 97

5962-E464-06

DEPARTMENT OF DEFENSE HANDBOOKS

MIL-HDBK-103 -

MIL-HDBK-780 -

List of Standard Microcircuit Drawings.

Standard Microcircuit Drawings.

(Copies of these documents are available online at

http://assist.daps.dla.mil/quicksearch/

http://assist.daps.dla.mil

or from

the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of

this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a

specific exemption has been obtained.

3. REQUIREMENTS

3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with

MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The

modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for

device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified

herein.

3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in

MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.

3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.

3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.

3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the

electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full

ambient operating temperature range.

3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical

tests for each subgroup are defined in table I.

3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be

marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer

has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be

marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be

in accordance with MIL-PRF-38535, appendix A.

3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in

MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.

3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535

listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of

compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see

6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this

drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and

herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.

3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for

device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.

3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2

herein) involving devices acquired to this drawing is required for any change that affects this drawing.

STANDARD

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43218-3990

DSCC FORM 2234

APR 97

SIZE

REVISION LEVEL

5962-88630

SHEET

5962-8863002VB相似产品对比

	5962-8863002VB	5962-8863001VA	5962-88630023A	5962-8863002VA	5962-8863002VX	5962-8863001VX	5962-88630023X	5962-8863001VB	5962-88630023B
描述	Instrumentation Amplifier, 1 Func, 150uV Offset-Max, 0.57MHz Band Width, CDIP18, CERAMIC, DIP-18	Instrumentation Amplifier, 1 Func, 80uV Offset-Max, 0.57MHz Band Width, CDIP18,	Instrumentation Amplifier, 1 Func, 150uV Offset-Max, 0.57MHz Band Width, CQCC28,	Instrumentation Amplifier, 1 Func, 150uV Offset-Max, 0.57MHz Band Width, CDIP18,	Instrumentation Amplifier, 1 Func, 150uV Offset-Max, 0.57MHz Band Width, CDIP18,	Instrumentation Amplifier, 1 Func, 80uV Offset-Max, 0.57MHz Band Width, CDIP18,	Instrumentation Amplifier, 1 Func, 150uV Offset-Max, 0.57MHz Band Width, CQCC28,	Instrumentation Amplifier, 1 Func, CDIP18,	Instrumentation Amplifier, 1 Func, CQCC28, CERAMIC, LCC-28
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
放大器类型	INSTRUMENTATION AMPLIFIER	INSTRUMENTATION AMPLIFIER	INSTRUMENTATION AMPLIFIER	INSTRUMENTATION AMPLIFIER	INSTRUMENTATION AMPLIFIER	INSTRUMENTATION AMPLIFIER	INSTRUMENTATION AMPLIFIER	INSTRUMENTATION AMPLIFIER	INSTRUMENTATION AMPLIFIER
最大平均偏置电流 (IIB)	0.015 µA	0.01 µA	0.015 µA	0.015 µA	0.015 µA	0.01 µA	0.015 µA	0.01 µA	0.015 µA
最小共模抑制比	75 dB	80 dB	75 dB	75 dB	75 dB	80 dB	75 dB	80 dB	75 dB
最大输入失调电流 (IIO)	0.006 µA	0.003 µA	0.006 µA	0.006 µA	0.002 µA	0.001 µA	0.002 µA	0.003 µA	0.006 µA
负供电电压上限	-18 V	-18 V	-18 V	-18 V	-18 V	-18 V	-18 V	-18 V	-18 V
功能数量	1	1	1	1	1	1	1	1	1
端子数量	18	18	28	18	18	18	28	18	28
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
封装主体材料	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, GLASS-SEALED	CERAMIC, METAL-SEALED COFIRED
封装形式	IN-LINE	IN-LINE	CHIP CARRIER	IN-LINE	IN-LINE	IN-LINE	CHIP CARRIER	IN-LINE	CHIP CARRIER
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
供电电压上限	18 V	18 V	18 V	18 V	18 V	18 V	18 V	18 V	18 V
温度等级	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
端子位置	DUAL	DUAL	QUAD	DUAL	DUAL	DUAL	QUAD	DUAL	QUAD
最大电压增益	1000	1000	1000	1000	10000	10000	10000	1000	1000
最小电压增益	1	1	1	1	0.1	0.1	0.1	1	1
标称电压增益	10	10	10	10	1000	1000	1000	10	10
包装说明	DIP,	DIP,	-	DIP,	DIP,	DIP,	-	,	CERAMIC, LCC-28
标称带宽 (3dB)	0.57 MHz	0.57 MHz	0.57 MHz	0.57 MHz	0.57 MHz	0.57 MHz	0.57 MHz	-	-
最大输入失调电压	150 µV	80 µV	150 µV	150 µV	150 µV	80 µV	150 µV	-	-
JESD-30 代码	R-GDIP-T18	R-GDIP-T18	S-CQCC-N28	R-GDIP-T18	R-GDIP-T18	R-GDIP-T18	S-CQCC-N28	-	S-CQCC-N28
JESD-609代码	e0	e0	e0	e0	-	-	-	e0	e0
标称负供电电压 (Vsup)	-15 V	-15 V	-15 V	-15 V	-15 V	-15 V	-15 V	-	-15 V
最大非线性	0.005%	0.005%	0.005%	0.005%	0.005%	0.005%	0.005%	-	-
封装代码	DIP	DIP	QCCN	DIP	DIP	DIP	QCCN	-	QCCN
封装形状	RECTANGULAR	RECTANGULAR	SQUARE	RECTANGULAR	RECTANGULAR	RECTANGULAR	SQUARE	-	SQUARE
座面最大高度	5.08 mm	5.08 mm	2.54 mm	5.08 mm	5.08 mm	5.08 mm	2.54 mm	-	-
标称压摆率	4.5 V/us	4.5 V/us	4.5 V/us	4.5 V/us	4.5 V/us	4.5 V/us	4.5 V/us	-	-
标称供电电压 (Vsup)	15 V	15 V	15 V	15 V	15 V	15 V	15 V	-	15 V
表面贴装	NO	NO	YES	NO	NO	NO	YES	-	YES
端子面层	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	-	-	-	TIN LEAD	TIN LEAD
端子形式	THROUGH-HOLE	THROUGH-HOLE	NO LEAD	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	NO LEAD	-	NO LEAD
端子节距	2.54 mm	2.54 mm	1.27 mm	2.54 mm	2.54 mm	2.54 mm	1.27 mm	-	-
宽度	7.62 mm	7.62 mm	11.43 mm	7.62 mm	7.62 mm	7.62 mm	11.43 mm	-	-
Base Number Matches	1	1	1	1	1	1	1	-	-

5962-8863002VB

5962-8863002VB概述

5962-8863002VB规格参数

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5962-8863002VB相似产品对比

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