MMBT489LT1G
High Current Surface Mount
NPN Silicon Switching
Transistor for Load
Management in
Portable Applications
Features
www.onsemi.com
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
30 VOLTS, 2.0 AMPERES
NPN TRANSISTOR
COLLECTOR
3
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
Max
30
50
5.0
1.0
2.0
Unit
Vdc
Vdc
Vdc
A
A
1
2
310
2.5
R
qJA
P
D
710
5.7
R
qJA
P
Dsingle
T
J
, T
stg
176
575
−55 to +150
mW
mW/°C
°C/W
mW
°C
1
N3 = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
403
mW
mW/°C
°C/W
N3 M
G
G
3
SOT−23 (TO−236)
CASE 318
STYLE 6
2
EMITTER
1
BASE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 1)
@T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
Total Device Dissipation (Note 2)
@T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
Total Device Dissipation (Single Pulse < 10 s)
Junction and Storage Temperature Range
Symbol
P
D
Max
Unit
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 4 @ Minimum Pad
2. FR− 4 @ 1.0 X 1.0 inch Pad
ORDERING INFORMATION
Device
MMBT489LT1G
Package
SOT−23
(Pb−Free)
Shipping
†
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2001
1
October, 2016 − Rev. 6
Publication Order Number:
MMBT489LT1/D
MMBT489LT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
Collector− Base Breakdown Voltage
(I
C
= 0.1 mAdc, I
E
= 0)
Emitter −Base Breakdown Voltage
(I
E
= 0.1 mAdc, I
C
= 0)
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
Collector−Emitter Cutoff Current
(V
CES
= 30 Vdc)
Emitter Cutoff Current
(V
EB
= 4.0 Vdc)
ON CHARACTERISTICS
DC Current Gain (Note 3)
(I
C
= 50 mA, V
CE
= 5.0 V)
(I
C
= 0.5 A, V
CE
= 5.0 V)
(I
C
= 1.0 A, V
CE
= 5.0 V)
Collector −Emitter Saturation Voltage (Note 3)
(I
C
= 1.0 A, I
B
= 100 mA)
(I
C
= 0.5 A, I
B
= 50 mA)
(I
C
= 0.1 A, I
B
= 1.0 mA)
Base −Emitter Saturation Voltage (Note 3)
(I
C
= 1.0 A, I
B
= 0.1 A)
Base −Emitter Turn−on Voltage (Note 3)
(I
C
= 1.0 mA, V
CE
= 2.0 V)
Cutoff Frequency
(I
C
= 100 mA, V
CE
= 5.0 V, f = 100 MHz
Output Capacitance
(f = 1.0 MHz)
h
FE
300
300
200
V
CE(sat)
−
−
−
V
BE(sat)
−
V
BE(on)
−
f
T
100
C
obo
−
15
−
pF
1.1
MHz
1.1
V
0.200
0.125
0.075
V
−
900
−
V
V
(BR)CEO
30
V
(BR)CBO
50
V
(BR)EBO
5.0
I
CBO
−
I
CES
−
I
EBO
−
0.1
0.1
mAdc
0.1
mAdc
−
mAdc
−
Vdc
−
Vdc
Vdc
Symbol
Min
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300
msec,
Duty Cycle
≤
2%
1.0
0.9
0.8
0.7
V
CE
(V)
0.6
0.5
0.4
0.3
0.2
0.1
0
I
C
= 500 mA
I
C
= 100 mA
0.001
0.01
I
b
(A)
0.1
0.2
I
C
= 1 A
V
CE
(V)
I
C
= 2 A
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.001
0.01
I
c
(A)
0.1
1
2
I
c
/I
b
= 100
I
c
/I
b
= 10
Figure 1. V
CE
versus I
b
Figure 2. V
CE
versus I
c
www.onsemi.com
2
MMBT489LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
HE
L
3X
b
T
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
T
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10
°
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
e
TOP VIEW
L1
VIEW C
A
A1
SIDE VIEW
SEE VIEW C
c
END VIEW
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
RECOMMENDED
SOLDERING FOOTPRINT*
2.90
3X
0.90
3X
0.80
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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