IGBT MODULE ( N series )
n
Features
•
Square RBSOA
•
Low Saturation Voltage
•
Less Total Power Dissipation
•
Improved FWD Characteristic
•
Minimized Internal Stray Inductance
•
Overcurrent Limiting Function (4~5 Times Rated Current)
n
Outline Drawing
n
Applications
•
High Power Switching
•
A.C. Motor Controls
•
D.C. Motor Controls
•
Uninterruptible Power Supply
n
Maximum Ratings and Characteristics
•
Absolute Maximum Ratings
Items
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Isolation Voltage
Screw Torque
( T
c
=25°C
)
Symbols
V
CES
V
GES
Continuous
I
C
1ms
I
C PULSE
Continuous
-I
C
1ms
-I
C PULSE
P
C
T
j
T
stg
A.C. 1min.
V
is
Mounting *1
Terminals *2
Ratings
1200
±
20
100
200
100
200
780
+150
-40
∼
+125
2500
3.5
4.5
Units
V
V
A
W
°C
°C
V
Nm
n
Equivalent Circuit
Note:
*1:Recommendable Value; 2.5
∼
3.5 Nm (M5) or (M6)
*2:Recommendable Value; 3.5
∼
4.5 Nm (M6)
•
Electrical Characteristics
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
( at T
j
=25°C )
Symbols
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
ON
t
r
t
OFF
t
f
V
F
t
rr
Test Conditions
V
GE
=0V V
CE
=1200V
V
CE
=0V V
GE
=± 20V
V
GE
=20V I
C
=100mA
V
GE
=15V I
C
=100A
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V
I
C
=100A
V
GE
=± 15V
R
G
=9.1Ω
I
F
=100A V
GE
=0V
I
F
=100A
Min.
Typ.
Max.
2.0
30
7.5
3.3
Units
mA
µA
V
V
pF
1.2
0.6
1.5
0.5
3.0
350
4.5
16000
5800
5160
0.65
0.25
0.85
0.35
µs
V
ns
•
Thermal Characteristics
Items
Thermal Resistance
Symbols
R
th(j-c)
R
th(j-c)
R
th(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
Typ.
Max.
0.16
0.43
Units
°C/W
0.025
Collector current vs. Collector-Emitter voltage
T
j
=25°C
250
V
GE
=20V,15V,12V,10V
200
200
250
Collector current vs. Collector-Emitter voltage
T
j
=125°C
V
GE
=20V,15V,12V,10V
[A]
C
C
[A]
Collector current : I
150
150
100
100
8V
50
8V
50
0
0
1
2
3
4
5
Collector-Emitter voltage : V
CE
[V]
0
0
1
2
3
4
5
Collector-Emitter voltage : V
CE
[V]
Collector-Emitter vs. Gate-Emitter voltage
T
j
=25°C
10
10
Collector current : I
Collector-Emitter vs. Gate-Emitter voltage
T
j
=125°C
[V]
CE
Collector-Emitter voltage :V
6
Collector-Emitter voltage V
CE
8
[V]
8
6
4
I
C
=
200A
100A
4
I
C
=
200A
100A
50A
2
50A
2
0
0
5
10
15
20
25
Gate-Emitter voltage : V
GE
[V]
0
0
5
10
15
20
25
Gate-Emitter voltage : V
GE
[V]
Switching time vs. Collector current
V
CC
=600V, R
G
=9.1
Ω
, V
GE
±15V, T
j
=25°C
1000
t
OFF
t
ON
1000
Switching time vs. Collector current
V
CC
=600V, R
G
=9.1
Ω
, V
GE
=±15V, T
j
=125°C
t
OFF
t
ON
t
f
t
r
[nsec]
ON
, t
r
, t
OFF
, t
f
100
ON
, t
r
, t
OFF
, t
f
[nsec]
100
t
f
t
r
Switching time : t
10
0
50
100
150
200
Collector current : I
C
[A]
Switching time : t
10
0
50
100
150
200
Collector current : I
C
[A]
Switching Time vs. R
G
V
CC
=600V, I
C
=100A, V
GE
=±15V, T
j
=25°C
t
OFF
1000
Dynamic Input Characteristics
T
j
=25°C
25
[ns]
[V]
V
CC
=400V
800
600V
20
t
ON
1000
ON
, t
r
, t
OFF
, t
f
CE
Collector-Emitter Voltage : V
600
15
t
r
t
f
400
10
200
100
5
0
10
Gate Resistance : R
G
[
Ω
]
0
400
800
1200
Gate Charge : Q
G
[nC]
0
Forward Current vs. Forward Voltage
V
GE
=0V
250
Reverse Recovery Characteristics
t
rr
, I
rr
vs. I
F
t
rr
[A]
[A]
rr
rr
200
T
j
=125°C
25°C
[ns]
125°C
t
rr
25°C
100
I
rr
125°C
I
rr
25°C
Reverse Recovery Current : I
F
100
50
Reverse Recovery Time
150
Forward Current : I
:t
0
0
1
2
3
4
5
Forward Voltage : V
F
[V]
10
0
50
100
150
200
Forward Current : I
F
[A]
Reversed Biased Safe Operating Area
Transient Thermal Resistance
1
Diode
1000
+V
GE
=15V, -V
GE
<15V, T
j
<125°C, R
G
>9.1
Ω
[°C/W]
[A]
800
IGBT
0,1
th(j-c)
Collector Current : I
C
600
SCSOA
(non-repetitive pulse)
Thermal resistance : R
400
0,01
200
RBSOA (Repetitive pulse)
0,001
0,001
0
0,01
0,1
1
0
200
400
600
800
1000
1200
Pulse Width : PW [s]
Collector-Emitter Voltage : V
CE
[V]
Gate-Emitter Voltage : V
Switching Time : t
GE
[V]
800V
Switching loss vs. Collector current
V
CC
=600V, R
G
=9.1
Ω
, V
GE
=±15V
40
Capacitance vs. Collector-Emitter voltage
T
j
=25°C
[mJ/cycle]
30
E
O N
125°C
E
O F F
125°C
C
oes
, C
res
[nF]
ON
,E
OFF
,E
rr
10
C
ies
E
O N
25°C
Switching loss : E
Capacitance : C
ies
,
20
E
O F F
25°C
10
1
C
o e s
C
res
E
rr
125°C
E
rr
25°C
0
0
50
100
150
200
0
5
10
15
20
25
30
35
Collector Current : I
C
[A]
Collector-Emitter Voltage : V
CE
[V]
Fuji Electric GmbH
Lyoner Straße 26
D-60528 Frankfurt/M
Tel.: 069 - 66 90 29 - 0
Fax.: 069 - 66 90 29 - 56
Fuji Electric (UK) Ltd.
Commonwealth House
2 Chalkhill Road Hammersmith
London W6 8DW, UK
Tel.: 0181 - 233 11 30
Fax.: 0181 - 233 11 60
P.O. Box 702708 - Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 - www.collmer.com
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