Si4850EY
Vishay Siliconix
N-Channel Reduced Q
g
, Fast Switching MOSFET
PRODUCT SUMMARY
V
DS
(V)
60
R
DS(on)
(Ω)
0.022 at V
GS
= 10 V
0.031 at V
GS
= 4.5 V
I
D
(A)
8.5
7.2
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFETs
• 175 °C Maximum Junction Temperature
• Compliant to RoHS Directive 2002/95/EC
D
SO-8
S
S
S
G
1
2
3
4
Top
View
Ordering Information:
Si4850EY-T1-E3 (Lead (Pb)-free)
Si4850EY-T1-GE3 (Lead (Pb)-free and Halogen-free)
8
7
6
5
D
D
D
D
G
S
N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
a
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
3.3
2.3
- 55 to 175
10 s
Steady State
60
± 20
8.5
7.1
40
15
11
1.7
1.2
6.0
5.0
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
36
75
17
Maximum
45
90
20
Unit
°C/W
Document Number: 71146
S09-1341-Rev. F, 13-Jul-09
www.vishay.com
1
Si4850EY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Symbol
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 6.0 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 6.0 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 6.0 A, T
J
= 175 °C
V
GS
= 4.5 V, I
D
= 5.1 A
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 1.7 A, dI/dt = 100 A/µs
V
DD
= 30 V, R
L
= 30
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
V
GS
= 0.1 V, f = 5 MHz
0.5
V
DS
= 30 V, V
GS
= 10 V, I
D
= 6.0 A
18
3.4
5.3
1.4
10
10
25
12
50
2.4
20
20
50
24
80
ns
Ω
27
nC
g
fs
V
SD
V
DS
= 15 V, I
D
= 6.0 A
I
S
= 1.7 A, V
GS
= 0 V
40
0.018
0.031
0.039
0.025
25
0.8
1.2
0.022
0.037
0.047
0.031
S
V
Ω
Min.
60
1
3
± 100
1
20
Typ.
Max.
Unit
V
nA
µA
A
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
V
GS
= 10
V
thru 5
V
32
I
D
- Drain Current (A)
40
32
I
D
-
Drain Current (A)
24
4
V
16
24
16
T
C
= 150 °C
8
25 °C
8
3
V
0
0.0
- 55 °C
0
2.5
3.0
0
1
2
3
4
5
0.5
1.0
1.5
2.0
V
DS
-
Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
Transfer Characteristics
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Document Number: 71146
S09-1341-Rev. F, 13-Jul-09
Si4850EY
Vishay Siliconix
TYPICAL CHARACTERISTICS
0.06
25 °C, unless otherwise noted
1400
1200
C
iss
C - Capacitance (pF)
1000
800
600
400
C
oss
200
0
C
rss
0
10
20
30
40
50
60
0.05
R
DS(on)
-
On-Resistance (Ω)
0.04
V
GS
= 4.5
V
0.03
V
GS
= 10
V
0.02
0.01
0.00
0
8
16
24
32
40
I
D
-
Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
10
I
D
= 6.0
V
2.2
I
D
= 6.0 A
2.0
8
R
DS(on)
-
On-Resistance
(Normalized)
V
DS
= 30
V
6
1.8
1.6
1.4
1.2
1.0
0.8
0
0
4
8
12
16
20
0.6
- 50
Capacitance
V
GS
- Gate-to-Source
Voltage
(V)
V
GS
= 10
V
4
2
- 25
0
25
50
75
100
125
150
175
Q
g
-
Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
50
0.06
On-Resistance vs. Junction Temperature
0.05
R
DS(on)
-
On-Resistance (Ω)
I
S
- Source Current (A)
T
J
= 175 °C
10
T
J
= 25 °C
0.04
I
D
= 6.0 A
0.03
0.02
0.01
1
0.00
0.00
0.5
1.0
1.5
2.0
2.5
0
2
4
6
8
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71146
S09-1341-Rev. F, 13-Jul-09
www.vishay.com
3
Si4850EY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.8
50
0.4
V
GS(th)
Variance
(V)
40
I
D
= 250
µA
- 0.4
Po
w
er (
W
)
0.0
30
20
- 0.8
10
- 1.2
- 50
0
- 25
0
25
50
75
100
125
150
175
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
2
1
N
ormalized Effecti
v
e Transient
Thermal Impedance
Duty Cycle = 0.5
Single Pulse Power
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 75 °C/W
t
1
t
2
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Square
Wave
Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
N
ormalized Effecti
v
e Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
Square
Wave
Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?71146.
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Document Number: 71146
S09-1341-Rev. F, 13-Jul-09
Package Information
Vishay Siliconix
SOIC
(NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
7
6
5
E
1
2
3
4
H
S
D
0.25 mm (Gage Plane)
A
h x 45
C
All Leads
q
L
0.101 mm
0.004"
e
B
A
1
MILLIMETERS
DIM
A
A
1
B
C
D
E
e
H
h
L
q
S
5.80
0.25
0.50
0°
0.44
Min
1.35
0.10
0.35
0.19
4.80
3.80
1.27 BSC
6.20
0.50
0.93
8°
0.64
0.228
0.010
0.020
0°
0.018
Max
1.75
0.20
0.51
0.25
5.00
4.00
Min
0.053
0.004
0.014
0.0075
0.189
0.150
INCHES
Max
0.069
0.008
0.020
0.010
0.196
0.157
0.050 BSC
0.244
0.020
0.037
8°
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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1
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