RN1107~1109
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1107, RN1108, RN1109
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
With built-in bias resistors.
Simplified circuit design
Reduced number of parts and simplified manufacturing process
Complementary to RN2107 to 2109
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN1107
RN1108
RN1109
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
RN1107 to 1109
RN1107 to 1109
RN1107
Emitter-base voltage
RN1108
RN1109
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1107 to 1109
RN1107 to 1109
RN1107 to 1109
RN1107 to 1109
I
C
P
C
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
50
50
6
7
15
100
100
150
−55
to 150
JEDEC
―
JEITA
―
TOSHIBA
2-2H1A
Weight: 2.4mg (typ.)
Unit
V
V
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1990-12
1
2014-03-01
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