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1N6264

产品描述GaAs INFRARED EMITTING DIODE
产品类别光电子/LED    光电   
文件大小123KB,共3页
制造商Fairchild
官网地址http://www.fairchildsemi.com/
标准
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1N6264概述

GaAs INFRARED EMITTING DIODE

1N6264规格参数

参数名称属性值
是否Rohs认证符合
包装说明HERMETIC SEALED, TO-46, 2 PIN
Reach Compliance Codecompliant
ECCN代码3A001.A.2.B
Is SamacsysN
配置SINGLE
最大正向电流0.1 A
最大正向电压1.7 V
安装特点THROUGH HOLE MOUNT
功能数量1
最高工作温度125 °C
最低工作温度-65 °C
光电设备类型INFRARED LED
标称输出功率6 mW
峰值波长940 nm
最大反向电压3 V
半导体材料GaAs
形状ROUND
光谱带宽6e-8 m
表面贴装NO
视角20 deg
Base Number Matches1

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1N6264
GaAs INFRARED EMITTING DIODE
PACKAGE DIMENSIONS
0.209 (5.31)
0.184 (4.67)
FEATURES
• Good optical to mechanical alignment
• Mechanically and wavelength matched to the
TO-18 series phototransistor
• Hermetically sealed package
0.030 (0.76)
NOM
0.255 (6.48)
• High irradiance level
• (*) Indicates JEDEC registered values
1.00 (25.4)
MIN
ANODE
(CASE)
DESCRIPTION
• The 1N6264 is a 940 nm LED in a
narrow angle, TO-46 package.
SCHEMATIC
ANODE
(Connected
To Case)
CATHODE
3
0.100 (2.54)
0.050 (1.27)
1
0.040 (1.02)
0.040 (1.02)
45°
1
3
Ø0.020 (0.51) 2X
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip
1/16”
(1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
7. Total power output, P
O
, is the total power radiated by the device into
a solid angle of 2 steradians.
ABSOLUTE MAXIMUM RATINGS
Parameter
* Operating Temperature
* Storage Temperature
* Soldering Temperature (Iron)
(3,4,5 and 6)
* Soldering Temperature (Flow)
(3,4 and 6)
* Continuous Forward Current
* Forward Current (pw, 1µs; 200Hz)
* Reverse Voltage
* Power Dissipation (T
A
= 25°C)
(1)
Power Dissipation (T
C
= 25°C)
(2)
(T
A
= 25°C unless otherwise specified)
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
I
F
V
R
P
D
P
D
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
100
10
3
170
1.3
Unit
°C
°C
°C
°C
mA
A
V
mW
W
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER
TEST CONDITIONS
(T
A
=25°C) (All measurements made under pulse conditions)
MIN
TYP
MAX
UNITS
SYMBOL
P
* Peak Emission Wavelength
Emission Angle at 1/2 Power
* Forward Voltage
* Reverse Leakage Current
* Total Power
Rise Time 0-90% of output
Fall Time 100-10% of output
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
V
R
= 3 V
I
F
= 100 mA
V
F1
I
R
P
O
t
r
t
f
935
6
±8
1.0
1.0
955
1.7
10
nm
Deg.
V
µA
mW
µs
µs
2001 Fairchild Semiconductor Corporation
DS300276
3/2/01
1 OF 3
www.fairchildsemi.com

 
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