PTFB072707FH
Thermally-Enhanced High Power RF LDMOS FET
270 W, 28 V, 728 – 768 MHz
Description
The PTFB072707FH is a LDMOS FET intended for use in multi-
standard cellular power amplifier applications. Features include
input and output matching, high gain and thermally-enhanced
package with earless flanges. Manufactured with Wolfspeed's ad-
vanced LDMOS process, this device provides excellent thermal
performance and superior reliability.
PTFB072707FH
Package H-34288G-4/2
V
DD
= 28 V, I
DQ
= 2.0 A, ƒ = 728 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
21
20
50
40
Two-carrier WCDMA Drive-up
Features
•
Broadband internal matching
•
Wide video bandwidth
•
Typical pulsed performance, 768 MHz, 28 V
(10 μs pulse width,10% duty cycle, class AB)
- Output power at P
1dB
= 320 W
- Gain = 17.5 dB
- Efficiency = 60%
•
Integrated ESD protection: Human Body Model
(HBM) Class 2 minimum (per JESD22-A114)
•
Low thermal resistance
•
RoHS compliant
•
Capable of handling 5:1 VSWR @ 28 V, 270 W
(CW) output power
Gain (dB)
19
18
17
16
Gain
30
20
Efficiency
b072707fh-gr1
10
0
34
36
38
40
42
44
46
48
50
52
Output Power (dBm)
RF Specifications
One-carrier WCDMA Characteristics
(tested in Wolfspeed production test fixture)
V
DD
= 28 V, I
DQ
= 2.0 A, P
OUT
= 60 W average, ƒ = 768 MHz. 3GPP signal: 3.84 MHz channel bandwidth,
10 dB peak/average @ 0.01% CCDF.
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
All published data at T
CASE
= 25°C unless otherwise indicated
Drain Efficiency (%)
Symbol
G
ps
Min
18
38
—
Typ
18.5
39
–33
Max
—
—
–32.5
Unit
dB
%
dBc
h
D
ACPR
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 03, 2018-06-13
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTFB072707FH
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
2
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
I
GSS
R
DS(on)
V
GS
Min
65
—
—
—
—
2.5
Typ
—
—
—
—
0.05
3.8
Max
—
1.0
10.0
1.0
—
4.5
Unit
V
μA
μA
μA
Gate Leakage Current
On-State Resistance
Operating Gate Voltage
V
GS
= 10 V, V
DS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 2.0 A
W
V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 240 W CW)
Symbol
V
DSS
V
GS
T
J
T
STG
R
q
JC
Value
65
–6 to +10
200
–40 to +150
0.17
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFB072707FH V1 R0
PTFB072707FH V1 R250
Order Code
PTFB072707FH-V1-R0
PTFB072707FH-V1-R250
Package and Description
H-34288G-4/2, ceramic open-cavity,
earless flange
H-34288G-4/2, ceramic open-cavity,
earless flange
Shipping
Tape & reel, 50 pcs
Tape & reel, 250 pcs
Rev. 03, 2018-06-13
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTFB072707FH
Typical Performance
(data taken in an Wolfspeed production test fixture)
Two-carrier WCDMA Drive-up
Two-carrier WCDMA Drive-up
3
V
DD
= 28 V, I
DQ
= 2.0 A, ƒ = 748 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
21
20
50
40
21
20
V
DD
= 28 V, I
DQ
= 2.0 A, ƒ = 768 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
50
40
Gain (dB)
19
18
17
16
30
20
Gain (dB)
Gain
Drain Efficiency (%)
19
18
17
16
Gain
30
20
Efficiency
b072707fh-gr2
10
0
Efficiency
b072707fh-gr3
10
0
34
36
38
40
42
44
46
48
50
52
34
36
38
40
42
44
46
48
50
52
Output Power (dBm)
Output Power (dBm)
V
DD
= 28 V, I
DQ
= 2.0 A, ƒ = 728 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-20
60
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 2.0 A, ƒ = 748 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-20
60
IMD Low
IMD Up
ACPR
Efficiency
Two-carrier WCDMA Drive-up
IMD (dBc), ACPR (dBc)
IMD (dBc), ACPR (dBc)
Drain Efficiency (%)
-30
40
-30
40
-40
20
-40
20
-50
b072707fh-gr4
34
36
38
40
42
44
46
48
50
52
0
-50
34
36
38
40
42
44
46
48
50
b072707fh-gr5
52
0
Output Power (dBm)
Output Power (dBm)
Rev. 03, 2018-06-13
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Drain Efficiency (%)
IMD Low
IMD Up
ACPR
Efficiency
Drain Efficiency (%)
PTFB072707FH
Typical Performance
(cont.)
Two-carrier WCDMA Drive-up
Two-carrier WCDMA Drive-up
4
V
DD
= 28 V, I
DQ
= 2.0 A, ƒ = 768 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-20
60
IMD Low
IMD Up
-30
ACPR
Efficiency
40
-15
V
DD
= 28 V, I
DQ
= 2.0 mA
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
728 MHz IMD Low
728 MHz IMD Up
748 MHz IMD Low
748 MHz IMD Up
768 MHz IMD Low
768 MHz IMD Up
IMD (dBc), ACPR (dBc)
Drain Efficiency (%)
-25
IMD (dBc)
-35
-40
20
-45
-50
b072707fh-gr6
34
36
38
40
42
44
46
48
50
52
0
-55
b072707fh-gr7
32
36
40
44
48
52
Output Power (dBm)
Output Power (dBm)
V
DD
= 28 V, I
DQ
= 2.0 A
21
20
CW Performance
CW Performance
at selected supply voltage
I
DQ
= 2.0 A, ƒ = 728 MHz
75
75
21
20
Gain
60
Gain
V
DD
= 24 V
V
DD
= 28 V
V
DD
= 32 V
60
45
30
15
Power Gain (dB)
Efficiency (%)
Gain (dB)
19
18
17
16
728 MHz
748 MHz
768 MHz
45
30
15
19
18
17
Efficiency
b072707fh-gr8
Efficiency
48
52
56
0
16
b072707fh-gr9
36
40
44
34 36 38 40 42 44 46 48 50 52 54 56
0
Output Power (dBm)
Output Power (dBm)
Rev. 03, 2018-06-13
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Efficiency (%)
PTFB072707FH
Typical Performance
(cont.)
CW Performance
at selected supply voltage
I
DQ
= 2.0 A, ƒ = 748 MHz
21
20
75
21
20
5
CW Performance
at selected supply voltage
I
DQ
= 2.0 A, ƒ = 768 MHz
75
Gain
60
Gain
60
45
30
15
Power Gain (dB)
Power Gain (dB)
19
18
17
16
V
DD
= 24 V
V
DD
= 28 V
V
DD
= 32 V
45
30
15
0
Efficiency (%)
19
18
17
16
V
DD
= 24 V
V
DD
= 28 V
V
DD
= 32 V
Efficiency
b072707fh-gr10
Efficiency
34 36 38 40 42 44 46 48 50 52 54 56
b072707fh-gr11
34 36 38 40 42 44 46 48 50 52 54 56
0
Output Power (dBm)
Output Power (dBm)
Small Signal CW Performance
V
DD
= 28 V, I
DQ
= 2.0 A
21
0
Power Gain (dB)
20
IRL
-5
19
-10
Gain
18
-15
17
b072707fh-gr12
600
650
700
750
800
850
900
-20
Frequency (MHz)
Rev. 03, 2018-06-13
Input Return Loss (dB)
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Efficiency (%)
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