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RN1106MFV,L3F

产品描述双极晶体管 - 预偏置 BRT NPN Single 100mA IC 50V VCEO
产品类别半导体    分立半导体    晶体管    双极晶体管 - 预偏置   
文件大小856KB,共9页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
下载文档 详细参数 选型对比 全文预览

RN1106MFV,L3F概述

双极晶体管 - 预偏置 BRT NPN Single 100mA IC 50V VCEO

RN1106MFV,L3F规格参数

参数名称属性值
厂商名称Toshiba(东芝)
产品种类双极晶体管 - 预偏置
配置Single
晶体管极性NPN
典型输入电阻器4.7 kOhms
典型电阻器比率0.1
安装风格SMD/SMT
封装 / 箱体SOT-723-3
直流集电极/Base Gain hfe Min80
集电极—发射极最大电压 VCEO50 V
集电极连续电流100 mA
Pd-功率耗散150 mW
最小工作温度- 55 C
最大工作温度+ 150 C
系列RN1106MFV
发射极 - 基极电压 VEBO5 V
通道模式Enhancement
最大直流电集电极电流100 mA
工厂包装数量8000

文档预览

下载PDF文档
RN1101MFV to RN1106MFV
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN1101MFV, RN1102MFV, RN1103MFV
RN1104MFV, RN1105MFV, RN1106MFV
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
0.22 ± 0.05
Unit: mm
1.2 ± 0.05
Ultra-small package, suited to very high density mounting
Incorporating a bias resistor into the transistor reduces the number of parts,
so enabling the manufacture of ever more compact equipment and lowering
assembly cost.
1.2 ± 0.05
A wide range of resistor values is available for use in various circuits.
Complementary to the RN2101MFV to RN2106MFV
0.8 ± 0.05
1
0.4
1
3
2
0.13 ± 0.05
Equivalent Circuit and Bias Resistor Values
Type No.
RN1101MFV
RN1102MFV
RN1103MFV
RN1104MFV
RN1105MFV
RN1106MFV
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
0.5 ± 0.05
0.4
VESM
JEDEC
JEITA
TOSHIBA
1. BASE
2. EMITTER
3. COLLECTOR
2-1L1A
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1101MFV to 1106MFV
RN1101MFV to 1106MFV
RN1101MFV to 1104MFV
RN1105MFV, 1106MFV
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note 1)
T
j
T
stg
Rating
50
50
10
5
100
150
150
−55
to 150
Weight: 1.5 mg (typ.)
Unit
V
V
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(25.4
mm
×
25.4 mm
×
1.6 mm)
Pad Dimension(Reference)
0.5
Unit: mm
0.45
1.15
0.4
0.45
0.4
0.4
Start of commercial production
2005-02
1
2016-09-14
0.32 ± 0.05
0.80 ± 0.05

RN1106MFV,L3F相似产品对比

RN1106MFV,L3F RN1103MFVTPL3 RN1105MFV
描述 双极晶体管 - 预偏置 BRT NPN Single 100mA IC 50V VCEO Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 22K x 22Kohms Bipolar Transistors - Pre-Biased 100mA 50volts 2.2K x 47Kohms
厂商名称 Toshiba(东芝) - Toshiba(东芝)
配置 Single - SINGLE WITH BUILT-IN RESISTOR

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