STD30NF03LT
N-channel 30V - 0.017Ω - 30A - DPAK
STripFET™ II Power MOSFET
General features
Type
STD30NF03LT
■
V
DSS
30V
R
DS(on)
< 0.025Ω
I
D
30A
Low threshold drive
1
DPAK
3
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
STD30NF03LTT4
Marking
D30NF03LT
Package
DPAK
Packaging
Tape & reel
February 2007
Rev 3
1/13
www.st.com
13
Contents
STD30NF03LT
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
4
5
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
STD30NF03LT
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
DS
V
DGR
V
GS
I
D(1)
I
D
I
DM(2)
P
tot
dv/dt
(3)
E
AS (4)
T
stg
T
j
Absolute maximum ratings
Parameter
Drain-source voltage (V
GS
= 0)
Drain-gate voltage (R
GS
= 20 kΩ)
Gate- source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
= 100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating Factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Storage temperature
-55 to 175
Max. operating junction temperature
°C
Value
30
30
± 20
30
21
120
50
0.33
4
450
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
1. Current limited by package
2. Pulse width limited by safe operating area.
3.
I
SD
≤
30A, di/dt
≤
400A/µs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
4. Starting T
j
= 25 °C, I
D
= 15A V
DD
= 25V
Table 2.
Rthj-case
Rthj-amb
T
J
Thermal data
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
3.0
100
275
°C/W
°C/W
°C
Table 3.
Symbol
I
AR
E
AS
Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
j
max)
Single pulse avalanche energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 15 V)
Max value
40
2.3
Unit
A
J
3/13
Electrical characteristics
STD30NF03LT
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4.
Symbol
V
(BR)DSS
On/off states
Parameter
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
GS
= 0)
Gate-body leakage
current (V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 250µA, V
GS
=0
V
DS
= Max rating
V
DS
= Max rating,
T
C
= 125°C
V
GS
= ± 20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 6V, I
D
= 15A
V
GS
= 105V, I
D
= 15A
1
1.7
0.025
0.017
Min.
30
1
10
±100
2.5
0.035
0.025
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
Ω
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Table 5.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Dynamic
Parameter
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
V
DS
= 15V, I
D
= 15A
Min.
Typ.
30
750
280
70
15
30
20
10
13
5.5
5
18
Max.
Unit
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
= 25V, f = 1MHz,
V
GS
= 0
V
DD
= 15V, I
D
= 15A
R
G
= 4.7Ω V
GS
= 6V
(see
Figure 12)
V
DD
= 15V, I
D
= 30A,
V
GS
= 6V, R
G
= 4.7Ω
(see
Figure 13)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
4/13
STD30NF03LT
Electrical characteristics
Table 6.
Symbol
I
SD
I
SDM
(1)
Source drain diode
Parameter
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
I
SD
= 30A, V
GS
= 0
35
38
2.5
Test conditions
Min.
Typ.
Max.
30
120
1.5
Unit
A
A
V
ns
nC
A
V
SD (2)
t
rr
Q
rr
I
RRM
Reverse recovery time
I
SD
= 30A, di/dt = 100A/µs,
Reverse recovery charge V
DD
= 20V, T
j
= 150°C
Reverse recovery current (see
Figure 14)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
5/13
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