Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-4
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| Objectid | 1402825105 |
| 包装说明 | CERAMIC PACKAGE-4 |
| 针数 | 4 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| Samacsys Manufacturer | Microsemi Corporation |
| Samacsys Modified On | 2024-04-19 04:00:48 |
| 最大集电极电流 (IC) | 0.8 A |
| 集电极-发射极最大电压 | 50 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 30 |
| JESD-30 代码 | R-CDSO-N3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 200 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | NPN |
| 最大功率耗散 (Abs) | 1 W |
| 认证状态 | Not Qualified |
| 参考标准 | MIL-19500/255 |
| 表面贴装 | YES |
| 端子面层 | TIN LEAD |
| 端子形式 | NO LEAD |
| 端子位置 | DUAL |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| 最大关闭时间（toff） | 300 ns |
| 最大开启时间（吨） | 35 ns |
| JANS2N2222AUBC | 2N2222AE4 | JANS2N2221AUBC | JAN2N2222AUB | 2N2222AE3 | JANTX2N2222AUA/TR | JANTX2N2222AUB/TR | |
|---|---|---|---|---|---|---|---|
| 描述 | Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-4 | TRANS NPN 50V 0.8A TO-18 | NPN TRANSISTOR | Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-4 | SMALL-SIGNAL BJT | SMALL-SIGNAL BJT | SMALL-SIGNAL BJT |
| 是否Rohs认证 | 不符合 | - | 不符合 | 不符合 | 符合 | - | - |
| 包装说明 | CERAMIC PACKAGE-4 | - | SMALL OUTLINE, R-CDSO-N3 | CERAMIC PACKAGE-4 | CYLINDRICAL, O-MBCY-W3 | SMALL OUTLINE, R-CDSO-N4 | - |
| 针数 | 4 | - | 4 | 4 | 3 | - | - |
| Reach Compliance Code | unknown | - | compliant | not_compliant | compliant | compliant | - |
| ECCN代码 | EAR99 | - | EAR99 | EAR99 | EAR99 | - | - |
| 最大集电极电流 (IC) | 0.8 A | - | 0.8 A | 0.8 A | 0.8 A | 0.8 A | - |
| 集电极-发射极最大电压 | 50 V | - | 50 V | 50 V | 50 V | 50 V | - |
| 配置 | SINGLE | - | SINGLE | SINGLE | SINGLE | SINGLE | - |
| 最小直流电流增益 (hFE) | 30 | - | 20 | 30 | 30 | 30 | - |
| JESD-30 代码 | R-CDSO-N3 | - | R-CDSO-N3 | R-XDSO-N3 | O-MBCY-W3 | R-CDSO-N4 | - |
| JESD-609代码 | e0 | - | e0 | e0 | e3 | - | - |
| 元件数量 | 1 | - | 1 | 1 | 1 | 1 | - |
| 端子数量 | 3 | - | 3 | 3 | 3 | 4 | - |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | - | CERAMIC, METAL-SEALED COFIRED | UNSPECIFIED | METAL | CERAMIC, METAL-SEALED COFIRED | - |
| 封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | ROUND | RECTANGULAR | - |
| 封装形式 | SMALL OUTLINE | - | SMALL OUTLINE | SMALL OUTLINE | CYLINDRICAL | SMALL OUTLINE | - |
| 极性/信道类型 | NPN | - | NPN | NPN | NPN | NPN | - |
| 参考标准 | MIL-19500/255 | - | MIL-19500/255 | MIL-PRF-19500 | - | MIL-19500/255 | - |
| 表面贴装 | YES | - | YES | YES | NO | YES | - |
| 端子面层 | TIN LEAD | - | Tin/Lead (Sn/Pb) | TIN LEAD | Matte Tin (Sn) | - | - |
| 端子形式 | NO LEAD | - | NO LEAD | NO LEAD | WIRE | NO LEAD | - |
| 端子位置 | DUAL | - | DUAL | DUAL | BOTTOM | DUAL | - |
| 晶体管应用 | SWITCHING | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING | - |
| 晶体管元件材料 | SILICON | - | SILICON | SILICON | SILICON | SILICON | - |
| 最大关闭时间（toff） | 300 ns | - | 300 ns | 300 ns | 300 ns | 300 ns | - |
| 最大开启时间（吨） | 35 ns | - | 35 ns | 35 ns | 35 ns | 35 ns | - |
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