RN1907FE~RN1909FE
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)
RN1907FE, RN1908FE, RN1909FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
•
•
Two devices are incorporated into an Extreme-Super-Mini (6-pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
•
Complementary to RN2907FE to RN2909FE
Unit: mm
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN1907FE
RN1908FE
R2
RN1909FE
E
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
B
R1
JEDEC
JEITA
TOSHIBA
―
―
2-2N1G
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN1907FE
to 1909FE
RN1907FE
Emitter-base voltage
RN1908FE
RN1909FE
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1907FE
to 1909FE
I
C
P
C
(Note 1)
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
50
50
6
7
15
100
100
150
−55
to 150
mA
mW
°C
°C
V
Unit
V
V
Weight: 0.003 g (typ.)
Equivalent Circuit
(top view)
6
5
4
Q1
Q2
1
2
3
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Start of commercial production
2000-05
1
2014-03-01
RN1907FE~RN1909FE
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector cut-off current
RN1907FE to RN1909FE
RN1907FE
Emitter cut-off current
RN1908FE
RN1909FE
RN1907FE
DC current gain
RN1908FE
RN1909FE
Collector-emitter
saturation voltage
RN1907FE to RN1909FE
RN1907FE
Input voltage (ON)
RN1908FE
RN1909FE
RN1907FE
Input voltage (OFF)
RN1908FE
RN1909FE
Transition frequency
Collector output
capacitance
RN1907FE to RN1909FE
RN1907FE to RN1909FE
RN1907FE
Input resistor
RN1908FE
RN1909FE
RN1907FE
Resistor ratio
RN1908FE
RN1909FE
R1/R2
⎯
R1
⎯
f
T
C
ob
V
CE
=
10 V, I
C
=
5 mA
V
CB
=
10 V, I
E
=
0,
f
=
1 MHz
V
I (OFF)
V
CE
=
5 V, I
C
=
0.1 mA
V
I (ON)
V
CE
=
0.2 V, I
C
=
5 mA
V
CE (sat)
I
C
=
5 mA,
I
B
=
0.25 mA
h
FE
V
CE
=
5 V, I
C
=
10 mA
I
EBO
Symbol
I
CBO
I
CEO
Test Condition
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
EB
=
7 V, I
C
=
0
V
EB
=
15 V, I
C
=
0
Min
⎯
⎯
0.081
0.078
0.167
80
80
70
⎯
0.7
1.0
2.2
0.5
0.6
1.5
⎯
⎯
7
15.4
32.9
0.191
0.421
1.92
Typ.
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.1
⎯
⎯
⎯
⎯
⎯
⎯
250
3
10
22
47
0.213
0.468
2.14
Max
100
500
0.15
0.145
0.311
⎯
⎯
⎯
0.3
1.8
2.6
5.8
1
1.16
2.6
⎯
6
13
28.6
61.1
0.232
0.515
2.35
kΩ
MHz
pF
V
V
V
mA
Unit
nA
2
2014-03-01
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