BFP405F
Low Noise Silicon Bipolar RF Transistor
•
For low current applications
•
Minimum noise figure
NF
min
= 1.25 dB at 1.8 GHz
Outstanding
G
ms
= 22.5 dB at 1.8 GHz
•
Transition frequency
f
T
= 25 GHz
•
Pb-free (RoHS compliant) and halogen-free thin small
flat package (1.4 x 0.8 x 0.59 mm) with visible leads
•
Qualification report according to AEC-Q101 available
4
3
1
2
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFP405F
Marking
ALs
1=B
Pin Configuration
2=E
3=C
4=E
-
-
Package
TSFP-4
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
V
CEO
Value
Unit
Collector-emitter voltage
T
A
= 25 °C
T
A
= -55 °C
V
4.5
4.1
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
≤
112 °C
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
J
T
Stg
15
15
1.5
25
3
75
150
-55 ... 150
mW
°C
mA
Junction temperature
Storage temperature
1
T
S
is
measured on the emitter lead at the soldering point to the pcb
Thermal Resistance
Parameter
Symbol
R
thJS
1
Value
Unit
Junction - soldering point
1)
500
K/W
2013-09-19
BFP405F
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 15 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 5 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 0.5 V,
I
C
= 0
DC current gain
I
C
= 5 mA,
V
CE
= 4 V, pulse measured
1
For
Unit
max.
-
10
100
1
130
V
µA
nA
µA
-
typ.
5
-
-
-
95
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
4
-
-
-
60
the definition of
R
thJS
please refer to Application Note AN077 (Thermal Resistance Calculation)
2
2013-09-19
BFP405F
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
AC Characteristics
(verified by random sampling)
Transition frequency
I
C
= 10 mA,
V
CE
= 3 V,
f
= 2 GHz
Collector-base capacitance
V
CB
= 2 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 2 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Minimum noise figure
I
C
= 2 mA,
V
CE
= 2 V,
f
= 1.8 GHz,
Z
S
=
Z
Sopt
Power gain, maximum stable
1)
I
C
= 5 mA,
V
CE
= 2 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Insertion power gain
V
CE
= 2 V,
I
C
= 5 mA,
f
= 1.8 GHz,
Z
S
=
Z
L
= 50
Ω
Third order intercept point at output
2)
V
CE
= 2 V,
I
C
= 5 mA,
f
= 1.8 GHz,
Z
S
=
Z
L
= 50
Ω
1dB compression point at output
I
C
= 5 mA,
V
CE
= 2 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1.8 GHz
1
G
ms
= |S
21
/
S
12
|
2
IP3 value depends
Unit
max.
-
0.1
GHz
pF
typ.
25
0.05
f
T
C
cb
18
-
C
ce
-
0.2
-
C
eb
-
0.25
-
NF
min
G
ms
-
-
1.25
22.5
-
-
dB
dB
|S
21
|
2
-
18
-
IP3
-
14
-
dBm
P
-1dB
-
0
-
on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
3
2013-09-19
BFP405F
Total power dissipation
P
tot
=
ƒ
(T
S
)
90
mW
70
60
50
40
30
20
10
0
0
P
tot
30
60
90
°C
150
T
S
4
2013-09-19
Package TSFP-4
BFP405F
5
2013-09-19
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
