IRFB4410Z | IRFS4410Z | IRFSL4410Z | IRFB4410ZPBF | IRFS4410ZTRLPBF | |
---|---|---|---|---|---|
描述 | 漏源电压(Vdss):100V 连续漏极电流(Id)(25°C 时):97A 栅源极阈值电压:4V @ 150uA 漏源导通电阻:9mΩ @ 58A,10V 最大功率耗散(Ta=25°C):230W 类型:N沟道 N沟道,100V,97A,9mΩ@10V | 漏源电压(Vdss):100V 连续漏极电流(Id)(25°C 时):97A 栅源极阈值电压:4V @ 150uA 漏源导通电阻:9mΩ @ 58A,10V 最大功率耗散(Ta=25°C):230W 类型:N沟道 N沟道 100V 97A | |||
是否Rohs认证 | - | - | 符合 | 符合 | 符合 |
厂商名称 | - | - | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) |
包装说明 | - | - | IN-LINE, R-PSIP-T3 | LEAD FREE, PLASTIC PACKAGE-3 | LEAD FREE, PLASTIC, D2PAK-3 |
Reach Compliance Code | - | - | compliant | compliant | compliant |
ECCN代码 | - | - | EAR99 | EAR99 | EAR99 |
雪崩能效等级(Eas) | - | - | 242 mJ | 242 mJ | 242 mJ |
外壳连接 | - | - | DRAIN | DRAIN | DRAIN |
配置 | - | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | - | - | 100 V | 100 V | 100 V |
最大漏极电流 (ID) | - | - | 97 A | 97 A | 97 A |
最大漏源导通电阻 | - | - | 0.009 Ω | 0.009 Ω | 0.009 Ω |
FET 技术 | - | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | - | - | TO-262AA | TO-220AB | TO-263AB |
JESD-30 代码 | - | - | R-PSIP-T3 | R-PSFM-T3 | R-PSSO-G2 |
元件数量 | - | - | 1 | 1 | 1 |
端子数量 | - | - | 3 | 3 | 2 |
工作模式 | - | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | - | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | - | - | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | - | - | IN-LINE | FLANGE MOUNT | SMALL OUTLINE |
峰值回流温度(摄氏度) | - | - | NOT SPECIFIED | 250 | 260 |
极性/信道类型 | - | - | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大脉冲漏极电流 (IDM) | - | - | 390 A | 390 A | 390 A |
认证状态 | - | - | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | - | - | NO | NO | YES |
端子形式 | - | - | THROUGH-HOLE | THROUGH-HOLE | GULL WING |
端子位置 | - | - | SINGLE | SINGLE | SINGLE |
处于峰值回流温度下的最长时间 | - | - | NOT SPECIFIED | 30 | 30 |
晶体管应用 | - | - | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | - | - | SILICON | SILICON | SILICON |
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