MZP4729A Series
3 Watt DO-41 SurmeticE 30
Zener Voltage Regulators
This is a complete series of 3 Watt Zener diodes with limits and
excellent operating characteristics that reflect the superior capabilities
of silicon–oxide passivated junctions. All this in an axial–lead,
transfer–molded plastic package that offers protection in all common
environmental conditions.
Specification Features:
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•
•
•
•
•
Zener Voltage Range – 3.6 V to 30 V
ESD Rating of Class 3 (>16 KV) per Human Body Model
Surge Rating of 98 W @ 1 ms
Maximum Limits Guaranteed on up to Six Electrical Parameters
Package No Larger than the Conventional 1 Watt Package
Cathode
Anode
Mechanical Characteristics:
CASE:
Void free, transfer–molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
AXIAL LEAD
CASE 59
PLASTIC
230°C, 1/16″ from the case for 10 seconds
POLARITY:
Cathode indicated by polarity band
MOUNTING POSITION:
Any
MAXIMUM RATINGS
Rating
Max. Steady State Power Dissipation
@ T
L
= 75°C, Lead Length = 3/8″
Derate above 75°C
Steady State Power Dissipation
@ T
A
= 50°C
Derate above 50°C
Operating and Storage
Temperature Range
Symbol
P
D
Value
3
24
P
D
1
6.67
T
J
, T
stg
–65 to
+200
Unit
W
mW/°C
W
mW/°C
°C
MARKING DIAGRAM
L
MZP4
7xxA
YYWW
L
= Assembly Location
MZP47xxA = Device Code
=
(See Table Next Page)
YY
= Year
WW
= Work Week
ORDERING INFORMATION
Device
MZP47xxA
MZP47xxARL
MZP47xxATA
MZP47xxARR1
{
MZP47xxARR2
}
{
}
Package
Axial Lead
Axial Lead
Axial Lead
Axial Lead
Axial Lead
Shipping
2000 Units/Box
6000/Tape & Reel
4000/Ammo Pack
2000/Tape & Reel
2000/Tape & Reel
Polarity band
up
with cathode lead off first
Polarity band
down
with cathode lead off first
©
Semiconductor Components Industries, LLC, 2002
1
February, 2002 – Rev. 2
Publication Order Number:
MZP4729A/D
MZP4729A Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless
otherwise noted, V
F
= 1.5 V Max @ I
F
= 200 mA for all types)
Symbol
V
Z
I
ZT
Z
ZT
I
ZK
Z
ZK
I
R
V
R
I
F
V
F
I
R
Parameter
Reverse Zener Voltage @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZK
Reverse Leakage Current @ V
R
Breakdown Voltage
Forward Current
Forward Voltage @ I
F
Surge Current @ T
A
= 25°C
V
Z
V
R
I
R
V
F
I
ZT
V
I
F
I
Zener Voltage Regulator
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2
MZP4729A Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, V
F
= 1.5 V Max @ I
F
= 200 mA for all types)
Zener Voltage
(Note 2)
Device
(Note 1)
MZP4729A
MZP4734A
MZP4735A
MZP4736A
MZP4737A
MZP4738A
MZP4740A
MZP4741A
MZP4744A
MZP4745A
MZP4746A
MZP4749A
MZP4750A
MZP4751A
MZP4752A
MZP4753A
Device
Marking
MZP4729A
MZP4734A
MZP4735A
MZP4736A
MZP4737A
MZP4738A
MZP4740A
MZP4741A
MZP4744A
MZP4745A
MZP4746A
MZP4749A
MZP4750A
MZP4751A
MZP4752A
MZP4753A
V
Z
(Volts)
Min
3.42
5.32
5.89
6.46
7.13
7.79
9.50
10.45
14.25
15.20
17.10
22.80
25.65
28.50
31.35
34.20
Nom
3.6
5.6
6.2
6.8
7.5
8.2
10
11
15
16
18
24
27
30
33
36
Max
3.78
5.88
6.51
7.14
7.88
8.61
10.50
11.55
15.75
16.80
18.90
25.20
28.35
31.50
34.65
37.80
@ I
ZT
mA
69
45
41
37
34
31
25
23
17
15.5
14
10.5
9.5
8.5
7.5
7.0
Zener Impedance
(Note 3)
Z
ZT
@ I
ZT
W
10
5
2
3.5
4
4.5
7
8
14
16
20
25
35
40
45
50
Z
ZK
@ I
ZK
W
400
600
700
700
700
700
700
700
700
700
750
750
750
1000
1000
1000
mA
1
1
1
1
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Leakage Current
I
R
@ V
R
µA
Max
100
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
Volts
1
2
3
4
5
6
7.6
8.4
11.4
12.2
13.7
18.2
20.6
22.8
25.1
27.4
I
R
(Note 4)
mA
1260
810
730
660
605
550
454
414
304
285
250
190
170
150
135
125
1.
TOLERANCE AND TYPE NUMBER DESIGNATION
The type numbers listed have a standard tolerance on the nominal zener voltage of
±5%.
2.
ZENER VOLTAGE (V
Z
) MEASUREMENT
ON Semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (T
L
) at 30°C
±1°C,
3/8″ from the diode body.
3.
ZENER IMPEDANCE (Z
Z
) DERIVATION
The zener impedance is derived from 60 seconds AC voltage, which results when an AC current having an rms value equal to 10% of the
DC zener current (I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK
.
4.
SURGE CURRENT (I
R
) NON–REPETITIVE
The rating listed in the electrical characteristics table is maximum peak, non–repetitive, reverse surge current of 1/2 square wave or
equivalent sine wave pulse of 1/120 second duration superimposed on the test current, I
ZT
, per JEDEC standards. However, actual device
capability is as described in Figure 3 of the General Data sheet for Surmetic 30s.
5
P
D
, MAXIMUM STEADY STATE
POWER DISSIPATION (WATTS)
4
3
2
1
0
L = 3/8″
L = 1/8″
L = LEAD LENGTH
TO HEAT SINK
L = 1″
0
20
40
60
80 100 120 140 160
T
L
, LEAD TEMPERATURE (°C)
180
200
Figure 1. Power Temperature Derating Curve
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3
MZP4729A Series
θ
JL(t, D) TRANSIENT THERMAL RESISTANCE
JUNCTION TO LEAD (
°
C/W)
30
20
10
7
5
3
2
D =0.5
0.2
0.1
0.05
0.02
0.01
D=0
0.0005
0.001
0.002
0.005
NOTE: BELOW 0.1 SECOND, THERMAL
RESPONSE CURVE IS APPLICABLE
TO ANY LEAD LENGTH (L).
0.01
0.02
0.05
t, TIME (SECONDS)
0.1
0.2
P
PK
t
2
DUTY CYCLE, D =t
1
/t
2
t
1
1
0.7
0.5
SINGLE PULSE
∆T
JL
=
θ
JL
(t)P
PK
REPETITIVE PULSES
∆T
JL
=
θ
JL
(t,D)P
PK
0.5
1
2
5
10
0.3
0.0001 0.0002
Figure 2. Typical Thermal Response L, Lead Length = 3/8 Inch
1K
PPK , PEAK SURGE POWER (WATTS)
500
300
200
100
50
30
20
10
0.1
0.2 0.3 0.5
1
2 3
5
10
PW, PULSE WIDTH (ms)
20 30 50
100
3
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
T
A
= 125°C
RECTANGULAR
NONREPETITIVE
WAVEFORM
T
J
= 25°C PRIOR
TO INITIAL PULSE
IR , REVERSE LEAKAGE (µ Adc) @ VR
AS SPECIFIED IN ELEC. CHAR. TABLE
T
A
= 125°C
0.002
0.001
0.0005
0.0003
1
2
5
10
20
50 100
NOMINAL V
Z
(VOLTS)
200
400
1000
Figure 3. Maximum Surge Power
Figure 4. Typical Reverse Leakage
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4
MZP4729A Series
APPLICATION NOTE
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, T
L
, should be determined from:
T
L
=
θ
LA
P
D
+ T
A
∆T
JL
is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for a train of
power pulses (L = 3/8 inch) or from Figure 10 for dc power.
∆T
JL
=
θ
JL
P
D
θ
LA
is the lead-to-ambient thermal resistance (°C/W) and P
D
is the power dissipation. The value for
θ
LA
will vary and
depends on the device mounting method.
θ
LA
is generally
30–40°C/W for the various clips and tie points in common
use and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
Using the measured value of T
L
, the junction temperature
may be determined by:
T
J
= T
L
+
∆T
JL
For worst-case design, using expected limits of I
Z
, limits
of P
D
and the extremes of T
J
(∆T
J
) may be estimated.
Changes in voltage, V
Z
, can then be found from:
∆V
=
θ
VZ
∆T
J
θ
VZ
, the zener voltage temperature coefficient, is found
from Figures 5 and 6.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 2 should not be used to compute surge
capability. Surge limitations are given in Figure 3. They are
lower than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots resulting in device
degradation should the limits of Figure 3 be exceeded.
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