IRFHM8326PbF
V
DSS
V
GS
max
R
DS(on)
max
(@ V
GS
= 10V)
(@ V
GS
= 4.5V)
Qg
(typical)
I
D
(@T
C (Bottom)
= 25°C)
30
±20
4.7
6.7
20
70
nC
A
V
V
m
S
HEXFET
®
Power MOSFET
S
S
G
D
D
D
D
D
PQFN 3.3X3.3 mm
Applications
Charge and Discharge Switch for Notebook PC Battery Application
System/Load Switch
Synchronous MOSFET for Buck Converters
Features
Low Thermal Resistance to PCB (<3.4°C/W)
Low Profile (<1.05 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Benefits
Enable better thermal dissipation
Increased Power Density
results in Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFHM8326PbF
Package Type
PQFN 3.3 mm x 3.3 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM8326TRPbF
Absolute Maximum Ratings
Parameter
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V (Source Bonding
Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
19
15
70
44
25
278
2.8
37
0.023
Units
V
A
W
W/°C
°C
-55 to + 150
Notes
through
are on page 9
1
2016-2-23
IRFHM8326PbF
Min.
30
–––
–––
–––
1.2
–––
–––
–––
–––
–––
70
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
22
3.8
5.2
1.7
-10
–––
–––
–––
–––
–––
39
20
4.8
2.6
6.5
6.1
9.1
11
1.9
12
35
18
12
2496
524
273
Typ.
–––
–––
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
15
14
Parameter
Typ.
–––
–––
–––
–––
Max.
25
A
278
1.0
23
21
V
ns
nC
Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
T
J
= 25°C, I
F
= 20A, V
DD
= 15V
di/dt = 300A/µs
D
G
S
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
BV
DSS
/T
J
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
V
GS(th)
I
DSS
I
GSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Max.
–––
–––
4.7
6.7
2.2
–––
1.0
150
100
-100
–––
–––
30
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 20A
m
V
GS
= 4.5V, I
D
= 20A
V
V = V
GS
, I
D
= 50µA
mV/°C
DS
V
DS
= 24V, V
GS
= 0V
µA
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
nA V
GS
= 20V
V
GS
= -20V
S
V
DS
= 10V, I
D
= 20A
nC V
GS
= 10V, V
DS
= 15V, I
D
= 20A
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs
Forward Transconductance
Q
g
Total Gate Charge
Total Gate Charge
Q
g
Q
gs1
Pre-Vth Gate-to-Source Charge
Q
gs2
Post-Vth Gate-to-Source Charge
Q
gd
Gate-to-Drain Charge
Q
godr
Gate Charge Overdrive
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
Q
oss
Output Charge
Gate Resistance
R
G
t
d(on)
Turn-On Delay Time
Rise Time
t
r
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
Output Capacitance
C
oss
C
rss
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
E
AS
Single Pulse Avalanche Energy
Avalanche Current
I
AR
Diode Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
Diode Forward Voltage
V
SD
t
rr
Reverse Recovery Time
Reverse Recovery Charge
Q
rr
Thermal Resistance
R
JC
(Bottom) Junction-to-Case
Junction-to-Case
R
JC
(Top)
R
JA
R
JA
(<10s)
Junction-to-Ambient
Junction-to-Ambient
nC
nC
ns
pF
V
DS
= 15V
V
GS
= 4.5V
I
D
= 20A
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 20A
R
G
=1.8
V
GS
= 0V
V
DS
= 10V
ƒ = 1.0MHz
Max.
58
20
Max.
3.4
41
44
31
Units
°C/W
2
2016-2-23
1000
TOP
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.0V
2.75V
2.5V
IRFHM8326PbF
1000
TOP
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.0V
2.75V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
1
2.5V
2.5V
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
1.8
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
1.6
1.4
1.2
1.0
0.8
0.6
ID = 20A
V GS = 10V
100
TJ = 150°C
10
TJ = 25°C
1
V DS = 10V
60µs PULSE WIDTH
0.1
1.0
2.0
3.0
4.0
5.0
6.0
V GS, Gate-to-Source Voltage (V)
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 20A
V GS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
V DS= 24V
V DS= 15V
V DS= 6.0V
C, Capacitance (pF)
10000
Ciss
1000
Coss
Crss
100
1
10
V DS, Drain-to-Source Voltage (V)
100
0
5
10 15 20 25 30 35 40 45 50
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
2016-2-23
1000
IRFHM8326PbF
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
TJ = 150°C
100
100µsec
1msec
10
TJ = 25°C
10
Limited by Source
Bonding Tecnology
1
V GS = 0V
0.1
0.0
0.4
0.8
1.2
1.6
2.0
V SD, Source-to-Drain Voltage (V)
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.1
1
10msec
DC
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
80
V GS(th) , Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
2.6
Limited by package
60
ID, Drain Current (A)
2.2
1.8
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
40
1.4
20
1.0
0
25
50
75
100
125
150
TC , Case Temperature (°C)
0.6
-75 -50 -25
0
25
50
75 100 125 150
TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
10
Thermal Response ( Z thJC ) °C/W
Fig 10.
Drain-to–Source Breakdown Voltage
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
2016-2-23
RDS(on), Drain-to -Source On Resistance (m
)
IRFHM8326PbF
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2
4
6
8
10
12
14
16
18
20
V GS, Gate -to -Source Voltage (V)
TJ = 25°C
TJ = 125°C
EAS , Single Pulse Avalanche Energy (mJ)
250
ID = 20A
ID
TOP
4.7A
9.8A
BOTTOM 20A
200
150
100
50
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig 12.
On– Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj
= 125°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Typical Avalanche Current vs. Pulsewidth
5
2016-2-23
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