MIC5022
Micrel, Inc.
MIC5022
Half-Bridge MOSFET Driver
Not Recommended for New Designs
General Description
The MIC5022 half-bridge MOSFET driver is designed to
operate at frequencies up to 100kHz (5kHz PWM for 2%
to 100% duty cycle) and is an ideal choice for high speed
applications such as motor control and SMPS (switch mode
power supplies).
A rising or falling edge on the input results in a current source
pulse or sink pulse on the gate outputs. This output current
pulse can turn on a 2000pF MOSFET in approximately 1µs.
The MIC5022 then supplies a limited current (< 2mA), if
necessary, to maintain the output states.
Two overcurrent comparators with nominal trip voltages of
50mV make the MIC5022 ideal for use with current sensing
MOSFETs. External low value resistors may be used instead
of sensing MOSFETs for more precise overcurrent control.
Optional external capacitors placed on the C
TH
and C
TL
pins
may be used to individually control the current shutdown duty
cycles from approximately 20% to <1%. Duty cycles from
20% to about 75% are possible with individual pull-up resistors
from C
TL
and C
TH
to V
DD
. An open collector output provides
a fault indication when either sense input is tripped.
The MIC5022 is available in 16-pin wide SOIC and 14-pin
plastic DIP packages.
Other members of the MIC502x family include the MIC5020
low-side driver and the MIC5021 high-side driver.
Features
•
•
•
•
•
•
•
•
•
•
12V to 36V operation
600ns rise time into 1000pF (high side)
TTL compatible input with internal pull-down resistor
Outputs interlocked to prevent cross conduction
TTL compatible enable
Fault output indication
Individual overcurrent limits
Gate protection
Internal charge pump (high-side)
Current source drive scheme reduces EMI
Applications
• Motor control
• Switch-mode power supplies
Ordering Information
Part Number
MIC5022BN
MIC5022BWM
Temperature Range
–40°C to +85°C
–40°C to +85°C
Package
16-pin Wide SOIC
14-pin Plastic DIP
Typical Application
+12V to +36V
MIC5022
V
B O O S T
Gate H
Sense H–
Sense H+
Gate L
Sense L–
Sense L+
TTL Input
(PWM signal)
1
V
DD
10µF
2
3
4
14
13
12
11
10
9
8
R
S 2
R
S 1
2.7nF
Input
Fault
C
TH
Enable
C
TL
Gnd
C
TH
C
TL
5
6
7
M
DC Motor Control Application
Micrel, Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel + 1 (408) 944-0800 • fax + 1 (408) 944-0970 • http://www.micrel.com
July 2005
1
MIC5022
MIC5022
Micrel, Inc.
1
V
DD
2
Input
3
Fault
4
C
TH
5
Enable
6
C
TL
7
Gnd
V
B O O S T
14
Pin Configuration
1
2
3
4
5
6
7
V
DD
NC
Input
NC
16
V
B O O S T
15
Gate H
14
Gate H
13
Sense H–
12
Sense H+
11
Gate L
10
Sense L–
9
Sense L+
8
Fault Sense H–
13
C
TH
Sense H+
12
Gate L
11
Enable
C
TL
Gnd
Sense L–
10
Sense L+
9
8
DIP Package
(N)
SOIC Package
(WM)
Pin Description
DIP Pin No.
1
2
SOIC Pin No.
1
3
Pin Name
Input
V
DD
Pin Function
Supply: +12V to +36V. Decouple with ≥ 10µF capacitor.
TTL Compatible Input: Logic high turns the high-side external MOSFET
on and the low-side external MOSFET off. Logic low turns the high-side
external MOSFET off and the low-side external MOSFET on. An internal
pull-down returns an open pin to logic low.
When either sense voltage exceeds threshold, open collector output is open
circuit for 5µs (t
G(ON)
), then pulled low for t
G(OFF)
. t
G(OFF)
is adjustable from
C
T
.
Retry Trimming Capacitor, High Side: Controls the off time (t
G(OFF)
) of the
overcurrent retry cycle. (Duty cycle adjustment.)
• Open = approx. 20% duty cycle.
• Capacitor to Ground = approx. 20% to < 1% duty cycle.
• Pullup resistor = approx. 20% to approx. 75% duty cycle.
• Ground = maintained shutdown upon overcurrent condition.
Output Enable: Disables operation of the output drivers; active high. An
internal pull-down returns an open pin to logic low.
Circuit Ground
Retry Trimming Capacitor, Low Side: Same function as C
TH
.
3
4
Fault
4
5
C
TH
5
6
7
8
6
7
8
8
Enable
C
TL
Gnd
Sense L +
Current Sense Comparator (+) Input, Low Side: Connect to source of low-
side MOSFET. A built-in offset (nominal 50mV) in conjunction with R
SENSE
sets the load overcurrent trip point.
Current Sense Comparator (–) Input, Low Side: Connect to the negative
side of the low-side sense resistor.
Gate Drive, Low Side: Drives the gate of an external power MOSFET. Also
limits V
GS
to 15V max. to prevent Gate to Source damage. Will sink and
source current.
Current Sense Comparator (+) Input, High Side: Connect to source of high-
side MOSFET. A built-in offset (nominal 50mV) in conjunction with R
SENSE
sets the load overcurrent trip point.
Current Sense Comparator (–) Input, High Side: Connect to the negative
side of the high-side sense resistor.
Gate Drive, High Side: Drives the gate of an external power MOSFET. Also
limits V
GS
to 15V max. to prevent Gate to Source damage. Will sink and
source current.
Charge Pump Boost Capacitor: A bootstrap capacitor from V
BOOST
to
the MOSFET source pin supplies charge to quickly enhance the external
MOSFET’s gate .
9
10
10
11
Sense L –
Gate L
11
12
Sense H +
12
13
13
14
Source H –
Gate H
14
15
V
BOOST
MIC5022
2
July 2005
MIC5022
Micrel, Inc.
Block Diagram
6V Internal Regulator
I
1
C
INT
2I
1
Sense H+
Sense H–
50mV
15V
ON
Fault
Normal
C
TH
V
DD
CHARGE
PUMP
V
B OOS T
Q1
1.4V
Input
↑
ONE-
↓
SH O T
OFF
6V
10I
2
I
2
Gate H
6V
I
1
C
INT
2I
1
Sense L+
Sense L–
50mV
Fault
Normal
C
TL
Fault
Q1
V
DD
15V
↑
ONE-
↓
SH O T
ON
OFF
1.4V
6V
10I
2
I
2
Gate L
Enable
Transistor Count: 188
Absolute Maximum Ratings
Supply Voltage (V
DD
)................................................... +40V
Input Voltage ...................................................–0.5V to 15V
Sense Differential Voltage .......................................... ±6.5V
Sense + or Sense – to Gnd ...........................–0.5V to +36V
Fault Voltage ............................................................... +36V
Current into Fault ........................................................ 50mA
Timer Voltage (C
T
) ...................................................... +5.5V
V
BOOST
Capacitor ..................................................... 0.01µF
July 2005
3
Operating Ratings
Supply Voltage (V
DD
)..................................... +12V to +36V
Temperature Range
SOIC ...................................................... –40°C to +85°C
PDIP
....................................................................
–40°C to +85°C
MIC5022
MIC5022
Micrel, Inc.
Electrical Characteristics
D.C. Supply Current
T
A
= 25°C, Gnd = 0V, V
DD
= 12V, Gate C
L
= 1500pF (IRF540 MOSFET) unless otherwise specificed
Symbol
Parameter
Condition
V
DD
= 12V, Input = 0V
V
DD
= 36V, Input = 0V
V
DD
= 12V, Input = 5V
Input Threshold
Input Hysteresis
Input Pull-Down Current
Enable Threshold
Enable Hysteresis
Fault Output
Saturation Voltage
Fault Output Leakage
Current Limit Thresh., Low-Side
Current Limit Thresh., High-Side
Gate On Voltage, High-Side
Gate On Voltage, Low-Side
t
G(ON)
t
DLH
t
R
t
F
Gate On Time, Fixed
Gate Off Time, Adjustable
Gate Turn-On Delay, High-Side
Gate Rise Time, High-Side
Gate Turn-Off Delay, High-Side
Gate Fall Time, High-Side
Gate Turn-On Delay, Low-Side
Gate Rise Time, Low-Side
Gate Turn-Off Delay, Low-Side
Gate Fall Time, Low-Side
Voltage remains low for time affected by C
T
.
DC measurement.
Min
Typ
2.5
6.0
2.4
3.0
Max
5
10
5
25
2.0
40
2.0
0.4
+1
70
70
21
52
18
10
50
2.0
1.5
2.0
1.5
2.5
1.5
1.0
1.5
Units
mA
mA
mA
mA
V
V
µA
V
V
V
µA
mV
mV
V
V
V
V
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
V
DD
= 36V, Input = 5V
0.8
10
0.8
1.4
0.1
20
1.4
0.1
0.15
Input = 5V
Fault Current = 1.6mA
Note 1
Fault = 36V
Note 2
Note 2
V
DD
= 36V,
Note 3
V
DD
= 36V,
Note 3
V
DD
= 12V,
Note 3
–1
30
30
16
46
10
14
2
10
0.01
50
50
18
49
11
15
5
20
1.4
0.8
1.2
0.6
1.7
0.7
0.5
1.0
V
DD
= 12V,
Note 3
Sense Differential > 70mV
t
G(OFF)
Sense Differential > 70mV, C
T
= 0pF
Note 4
Note 5
Note 6
Note 7
Note 4
Note 8
Note 9
Note 10
t
DHL
t
DLH
t
R
t
F
t
DHL
Note 1
Note 2
Note 3
Note 4
Note 5
Note 6
Note 7
Note 8
Note 9
When using sense MOSFETs, it is recommended that R
SENSE
< 50Ω. Higher values may affect the sense MOSFET’s current transfer ratio.
Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 0V to 2V.
Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 2V to 17V.
Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 20V (Gate on voltage) to 17V.
Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 17V to 2V.
Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 2V to 10V.
Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 15V (Gate on voltage) to 10V.
Note 10
Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 10V to 2V.
MIC5022
4
July 2005
MIC5022
Micrel, Inc.
Typical Characteristics
Supply Current vs.
Supply Voltage
V
IN
= 0V
V
G ATE H
(V)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
5
25
20
15
10
5
0
5
Gate to Source Voltage
vs. Supply Voltage
2.5
2.0
t
O N 4V
(µS)
1.5
Gate Turn-On Delay vs.
Supply Voltage
I
SU PPLY
(mA)
V
IN
= 5V
V
GATE
= V
SUPPLY
+ 4V
C = C
H
= 1500pF
1.0 C
L
BOOST
= 0.01µF
0.5
NOTE: INCLUDES PROPAGATION
DELAY & CROSS CONDUCTION
LOCKOUT
10 15 20 25 30 35 40
V
SUPPLY
(V)
10 15 20 25 30 35 40
V
SUPPLY
(V)
0.0
5
10 15 20 25 30 35 40
V
SUPPLY
(V)
2.5
2
t
O N 10V
(µS)
Gate Turn-On Delay vs.
Supply Voltage
t
O N
(µS)
t
O N
(µS)
1.5
1
0.5
0
5
V
GATE H
= V
SUPPLY
+ 10V
C
L
= C
H
= 1500pF
C
BOOST
= 0.01µF
NOTE: INCLUDES PROPAGATION
DELAY & CROSS CONDUCTION
LOCKOUT
10 15 20 25 30 35 40
V
SUPPLY
(V)
5.0
4.5 V
GATE H
= V
SUPPLY
+ 4V
4.0 C
L
= C
H
V
= 12V
3.5
SUPPLY
3.0
HIGH-SIDE
2.5
2.0
PROP.
1.5
DELAY
1.0
NOTE: INCLUDES PROPAGATION
DELAY & CROSS CONDUCTION
0.5
LOCKOUT
0.0
1x10
0
1x10
1
1x10
2
1x10
3
1x10
4
1x10
5
C
GATE
(pF)
Gate Turn-On/Off Delay vs.
Gate Capacitance
3.5
Gate Turn-On/Off Delay vs.
Gate Capacitance
V
GATE L
= 4V
3.0 C
L
= C
H
V
SUPPLY
= 12V
2.5
2.0
1.5
LOW-SIDE
NOTE: INCLUDES
PROPAGATION
DELAY & CROSS
CONDUCTION
LOCKOUT
PROP.
DELAY
1.0
1x10
0
1x10
1
1x10
2
1x10
3
1x10
4
1x10
5
C
GATE
(pF)
25
RETRY DUTY CYCLE (%)
20
15
Overcurrent Retry Duty
Cycle vs. Timing Capacitance
t
ON
= 5µS
V
SUPPLY
= 12V
HIGH SIDE
25.0
RETRY DUTY CYCLE (%)
20.0
15.0
10.0
5.0
Overcurrent Retry Duty
Cycle vs. Timing Capacitance
t
ON
= 5µS
V
SUPPLY
= 12V
LOW SIDE
100
80
Input Current vs.
Input Voltage
V
SUPPLY
= 12V
I
IN
(µA)
60
40
20
10 NOTE:
t
ON
, t
OFF
TIME
5 INDEPENDENT
OF V
SUPPLY
0
0.1
1
10 100 1000 10000
C
TH
(pF)
0.0
0.1
1
10 100 1000 10000
C
TL
(pF)
0
0
5
10
15
V
IN
(V)
20
25
80
70
VOLTAGE (mV)
60
50
40
30
Sense Threshold vs.
Temperature
20
-60 -30 0 30 60 90 120 150
TEMPERATURE °C)
(
July 2005
5
MIC5022
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
