RF Bipolar Transistors RF BIP TRANSISTORS
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | Infineon(英飞凌) |
产品种类 Product Category | RF Bipolar Transistors |
Transistor Type | Bipolar |
技术 Technology | Si |
Transistor Polarity | NPN |
Emitter- Base Voltage VEBO | 1.5 V |
Continuous Collector Current | 0.035 A |
最小工作温度 Minimum Operating Temperature | - 65 C |
最大工作温度 Maximum Operating Temperature | + 150 C |
Configuration | Single |
Collector- Base Voltage VCBO | 15 V |
DC Current Gain hFE Max | 60 at 20 mA at 4 V |
Operating Frequency | 25000 MHz (Typ) |
类型 Type | RF Bipolar Small Signal |
Pd-功率耗散 Pd - Power Dissipation | 160 mW |
BFP 420 E6740 | BFP-420-E6433 | BFP 420 H6740 | BFP 420 E6327 | |
---|---|---|---|---|
描述 | RF Bipolar Transistors RF BIP TRANSISTORS | RF Bipolar Transistors NPN Silicon RF TRANSISTOR | 射频(RF)双极晶体管 RF BIP TRANSISTOR | 射频(RF)双极晶体管 TRANS GP BJT NPN 4.5V.035A |
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