RF Bipolar Transistors NPN Silicon RF TRANSISTOR
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | Infineon(英飞凌) |
产品种类 Product Category | RF Bipolar Transistors |
RoHS | Details |
Transistor Type | Bipolar |
技术 Technology | Si |
Transistor Polarity | NPN |
Collector- Emitter Voltage VCEO Max | 4.5 V |
Emitter- Base Voltage VEBO | 1.5 V |
Continuous Collector Current | 0.035 A |
最小工作温度 Minimum Operating Temperature | - 65 C |
最大工作温度 Maximum Operating Temperature | + 150 C |
Configuration | Single Dual Emitter |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | SOT-343-4 |
系列 Packaging | Cut Tape |
系列 Packaging | Reel |
Collector- Base Voltage VCBO | 15 V |
DC Current Gain hFE Max | 60 at 20 mA at 4 V |
高度 Height | 0.9 mm |
长度 Length | 2 mm |
Operating Frequency | 25 GHz |
类型 Type | RF Bipolar Small Signal |
宽度 Width | 1.25 mm |
Gain Bandwidth Product fT | 25000 MHz |
Maximum DC Collector Current | 0.035 A |
Pd-功率耗散 Pd - Power Dissipation | 160 mW |
工厂包装数量 Factory Pack Quantity | 10000 |
单位重量 Unit Weight | 0.000226 oz |
BFP-420-E6433 | BFP 420 E6740 | BFP 420 H6740 | BFP 420 E6327 | |
---|---|---|---|---|
描述 | RF Bipolar Transistors NPN Silicon RF TRANSISTOR | RF Bipolar Transistors RF BIP TRANSISTORS | 射频(RF)双极晶体管 RF BIP TRANSISTOR | 射频(RF)双极晶体管 TRANS GP BJT NPN 4.5V.035A |
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