d. See Solder Profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73774
S09-1338-Rev. C, 13-Jul-09
www.vishay.com
1
SiE810DF
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a, b
Maximum Junction-to-Foot (Drain Top)
a, c
Maximum Junction-to-Foot (Source)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 68 °C/W.
c. Measured at source pin (on the side of the package).
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJC
(Drain)
R
thJC
(Source)
Typical
20
0.8
2.2
Maximum
24
1
2.7
Unit
°C/W
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Resistance
a
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 4.5 V
V
GS
=
10 V, I
D
= 25 A
V
GS
=
4.5 V, I
D
= 25 A
V
GS
=
2.5 V, I
D
= 25 A
V
DS
= 10 V, I
D
= 25 A
0.8
20
21.5
-5
1.3
V
mV/°C
2
± 100
1
10
0.0014
0.0016
0.0027
V
nA
µA
A
0.0011
0.0013
0.0022
163
13000
1600
1000
200
90
21
19
0.9
40
95
95
15
20
70
100
10
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
25
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
a
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 10 V, V
GS
= 10 V, I
D
= 20 A
pF
300
135
nC
Ω
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 20 A
f = 1 MHz
V
DD
= 10 V, R
L
= 1
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
V
DD
= 10 V, R
L
= 1
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
T
C
= 25 °C
1.35
60
145
145
25
30
105
150
15
60
100
1.2
90
100
ns
Pulse Diode Forward Current
I
S
= 10 A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
b. Guaranteed by design, not subject to production testing.
A
V
ns
nC
ns
0.9
60
65
27
33
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73774
S09-1338-Rev. C, 13-Jul-09
SiE810DF
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
V
GS
= 5
V
thru 2.5
V
I
D
- Drain C
u
rrent (A)
20
80
I
D
- Drain C
u
rrent (A)
16
60
12
T
C
= 125 °C
40
V
GS
= 2
V
20
V
GS
= 1.5
V
0
0.0
8
T
C
= 25 °C
4
T
C
= - 55 °C
0.5
1.0
1.5
2.0
2.5
0.1
0.2
0.3
0.4
0.5
0
0.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.0026
18 000
Transfer Characteristics
15 000
R
DS(on)
- On-Resistance (Ω)
0.0022
C - Capacitance (pF)
V
GS
= 2.5
V
C
iss
12 000
0.0018
9000
6000
0.0014
V
GS
= 4.5
V
3000
C
rss
0
5
10
15
20
C
oss
0.0010
0
20
40
60
80
100
0
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 25 A
V
GS
- Gate-to-So
u
rce
V
oltage (
V
)
8
V
DS
= 10
V
R
DS(on)
- On-Resistance
1.6
1.8
I
D
= 25 A
Capacitance
V
GS
= 4.5
V
1.4
(
N
ormalized)
6
V
DS
= 16
V
1.2
V
GS
= 2.5
V
1.0
4
2
0.8
0
0
30
60
90
120
150
180
210
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73774
S09-1338-Rev. C, 13-Jul-09
www.vishay.com
3
SiE810DF
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
R
DS(on)
- Drain-to-So
u
rce On-Resistance (Ω)
0.0040
I
D
= 25 A
0.0035
I
S
- So
u
rce C
u
rrent (A)
0.0030
10
T
J
= 150 °C
T
J
= 25 °C
0.0025
125 °C
0.0020
0.0015
25 °C
1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0010
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
1.6
50
On-Resistance vs. Gate-to-Source Voltage
1.4
I
D
= 250
µA
1.2
Po
w
er (
W
)
V
GS(th)
(
V
)
40
30
1.0
20
0.8
10
0.6
0.4
- 50
0
- 25
0
25
50
75
100
125
150
0.01
0.1
1
Time (s)
10
100
1000
T
J
-Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
Single Pulse Power, Junction-to-Ambient
I
D
- Drain C
u
rrent (A)
1 ms
10 ms
100 ms
1
1s
T
A
= 25 °C
Single Pulse
0.1
BVDSS
Limited
0.01
0.01
*
V
GS
0.1
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
10 s
DC
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 73774
S09-1338-Rev. C, 13-Jul-09
SiE810DF
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
300
140
120
Po
w
er Dissipation (
W
)
Package Limited
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
100
80
60
40
20
250
I
D
- Drain C
u
rrent (A)
200
150
100
50
T
C
- Case Temperature (°C)
Current Derating*
Power Derating, Junction-to-Case
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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